Patents by Inventor Kazuhiro Tomioka
Kazuhiro Tomioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11976970Abstract: An optical sensor includes at least one interferometer having a pair of semi-transparent mirrors spaced apart and oppositely arranged, and at least one position of the pair of semi-transparent mirrors can be displaced, at least one collimating element overlapping the at least one interferometer, and at least one photoelectric conversion element having sensitivity in the visible and near infrared light bands and receiving light passing through the interferometer and the collimating element.Type: GrantFiled: March 24, 2022Date of Patent: May 7, 2024Assignee: Japan Display Inc.Inventors: Toshiyuki Higano, Yasushi Tomioka, Kazuhiro Nishiyama
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Publication number: 20230284537Abstract: According to one embodiment, a memory device includes a memory element provided above a substrate in a first direction perpendicular to a first surface of the substrate; a switching element provided between the substrate and the memory element; and a first layer provided between the memory element and the switching element. The first layer includes at least one selected from the group including boron, carbon, silicon, magnesium, aluminum, scandium, titanium, vanadium, gallium, germanium, yttrium, zirconium, niobium, molybdenum, palladium, silver, hafnium, tantalum, tungsten, iridium, and platinum. The first layer includes an air gap.Type: ApplicationFiled: August 10, 2022Publication date: September 7, 2023Applicant: Kioxia CorporationInventors: Kazuhiro TOMIOKA, Kazuya SAWADA
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Publication number: 20230247912Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.Type: ApplicationFiled: April 12, 2023Publication date: August 3, 2023Applicant: Kioxia CorporationInventors: Takao OCHIAI, Kazuhiro TOMIOKA
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Patent number: 11659773Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.Type: GrantFiled: March 11, 2021Date of Patent: May 23, 2023Assignee: Kioxia CorporationInventors: Takao Ochiai, Kazuhiro Tomioka
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Publication number: 20230071013Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.Type: ApplicationFiled: March 10, 2022Publication date: March 9, 2023Applicant: Kioxia CorporationInventors: Kazuya SAWADA, Toshihiko NAGASE, Kenichi YOSHINO, Kazuhiro TOMIOKA, Naoki AKIYAMA, Takuya SHIMANO, Hisanori AIKAWA, Taichi IGARASHI
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Publication number: 20220293676Abstract: According to one embodiment, a magnetic memory device includes a bottom electrode, a stacked structure provided on the bottom electrode, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a first sidewall insulating layer provided on a sidewall of the bottom electrode and containing a predetermined element and oxygen (O), and a second sidewall insulating layer provided on a sidewall of the stacked structure and containing the predetermined element and oxygen (O).Type: ApplicationFiled: September 10, 2021Publication date: September 15, 2022Applicant: Kioxia CorporationInventor: Kazuhiro TOMIOKA
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Publication number: 20210288243Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.Type: ApplicationFiled: March 11, 2021Publication date: September 16, 2021Applicant: Kioxia CorporationInventors: Takao OCHIAI, Kazuhiro TOMIOKA
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Patent number: 10847576Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.Type: GrantFiled: March 14, 2019Date of Patent: November 24, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shuichi Tsubata, Yasuyuki Sonoda, Kazuhiro Tomioka, Takao Ochiai
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Publication number: 20200083290Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.Type: ApplicationFiled: March 14, 2019Publication date: March 12, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Shuichi TSUBATA, Yasuyuki SONODA, Kazuhiro TOMIOKA, Takao OCHIAI
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Patent number: 10490732Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).Type: GrantFiled: September 16, 2016Date of Patent: November 26, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yasuyuki Sonoda, Daisuke Watanabe, Masatoshi Yoshikawa, Youngmin Eeh, Shuichi Tsubata, Toshihiko Nagase, Yutaka Hashimoto, Kazuya Sawada, Kazuhiro Tomioka, Kenichi Yoshino, Tadaaki Oikawa
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Patent number: 10461245Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.Type: GrantFiled: March 3, 2015Date of Patent: October 29, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shuichi Tsubata, Masatoshi Yoshikawa, Satoshi Seto, Kazuhiro Tomioka
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Patent number: 10381198Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.Type: GrantFiled: September 25, 2013Date of Patent: August 13, 2019Assignee: Toshiba Memory CorporationInventors: Akio Ui, Hisataka Hayashi, Kazuhiro Tomioka, Hiroshi Yamamoto, Tsubasa Imamura
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Patent number: 10230042Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.Type: GrantFiled: September 9, 2016Date of Patent: March 12, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masatoshi Yoshikawa, Hisanori Aikawa, Kazuhiro Tomioka, Shuichi Tsubata, Masaru Toko, Katsuya Nishiyama, Yutaka Hashimoto, Tatsuya Kishi
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Patent number: 10193057Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.Type: GrantFiled: January 6, 2017Date of Patent: January 29, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Masatoshi Yoshikawa, Hiroaki Yoda, Shuichi Tsubata, Kenji Noma, Tatsuya Kishi, Satoshi Seto, Kazuhiro Tomioka
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Publication number: 20190006580Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).Type: ApplicationFiled: September 9, 2018Publication date: January 3, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA
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Publication number: 20170263858Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).Type: ApplicationFiled: September 16, 2016Publication date: September 14, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yasuyuki SONODA, Daisuke WATANABE, Masatoshi YOSHIKAWA, Youngmin EEH, Shuichi TSUBATA, Toshihiko NAGASE, Yutaka HASHIMOTO, Kazuya SAWADA, Kazuhiro TOMIOKA, Kenichi YOSHINO, Tadaaki OIKAWA
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Publication number: 20170256705Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.Type: ApplicationFiled: September 9, 2016Publication date: September 7, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi YOSHIKAWA, Hisanori AIKAWA, Kazuhiro TOMIOKA, Shuichi TSUBATA, Masaru TOKO, Katsuya NISHIYAMA, Yutaka HASHIMOTO, Tatsuya KISHI
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Patent number: 9698338Abstract: According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.Type: GrantFiled: March 5, 2015Date of Patent: July 4, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi Yoshikawa, Satoshi Seto, Shuichi Tsubata, Kazuhiro Tomioka
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Publication number: 20170169996Abstract: In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.Type: ApplicationFiled: February 24, 2017Publication date: June 15, 2017Inventors: Akio UI, Hisataka HAYASHI, Kazuhiro TOMIOKA, Hiroshi YAMAMOTO, Tsubasa IMAMURA
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Publication number: 20170117454Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.Type: ApplicationFiled: January 6, 2017Publication date: April 27, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA