Patents by Inventor Kazuki Denpoh
Kazuki Denpoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200357606Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: ApplicationFiled: May 1, 2020Publication date: November 12, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
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Patent number: 10804076Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.Type: GrantFiled: March 24, 2016Date of Patent: October 13, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Kazuki Denpoh, Jun Yamawaku, Masashi Saito
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Publication number: 20200058467Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.Type: ApplicationFiled: October 24, 2019Publication date: February 20, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Kazuki DENPOH, Jun YAMAWAKU
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Publication number: 20180308662Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: ApplicationFiled: June 7, 2018Publication date: October 25, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
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Patent number: 9997332Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: GrantFiled: January 27, 2016Date of Patent: June 12, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Masashi Saito, Kazuki Denpoh, Chishio Koshimizu, Jun Yamawaku
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Patent number: 9941097Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: GrantFiled: April 11, 2014Date of Patent: April 10, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
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Patent number: 9899191Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: GrantFiled: April 11, 2014Date of Patent: February 20, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
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Publication number: 20170256381Abstract: There is provided a substrate processing apparatus which performs a film forming process by supplying a raw material gas to a substrate and irradiating plasma onto the substrate, the apparatus including: a processing container configured to hermetically accommodate a mounting table on which the substrate is mounted; and a plasma source configured to generate plasma in the processing container. The plasma source includes a high-frequency power source that generates plasma and a sheath potential reducing means configured to reduce a sheath potential of the generated plasma.Type: ApplicationFiled: February 24, 2017Publication date: September 7, 2017Inventor: Kazuki DENPOH
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Patent number: 9455133Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.Type: GrantFiled: April 1, 2013Date of Patent: September 27, 2016Assignee: Tokyo Electron LimitedInventors: Kazuki Denpoh, Peter L G Ventzek, Lin Xu, Lee Chen
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Publication number: 20160203951Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.Type: ApplicationFiled: March 24, 2016Publication date: July 14, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Chishio KOSHIMIZU, Kazuki DENPOH, Jun YAMAWAKU, Masashi SAITO
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Publication number: 20160172160Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: ApplicationFiled: January 27, 2016Publication date: June 16, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
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Publication number: 20160118222Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.Type: ApplicationFiled: January 8, 2016Publication date: April 28, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Kazuki DENPOH, Jun YAMAWAKU
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Patent number: 9313872Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.Type: GrantFiled: October 27, 2010Date of Patent: April 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Kazuki Denpoh, Jun Yamawaku, Masashi Saito
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Patent number: 9253867Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: GrantFiled: October 27, 2010Date of Patent: February 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Masashi Saito, Kazuki Denpoh, Chishio Koshimizu, Jun Yamawaku
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Patent number: 9136097Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.Type: GrantFiled: November 7, 2008Date of Patent: September 15, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Kazuki Denpoh, Hiromasa Mochiki
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Patent number: 8829387Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.Type: GrantFiled: August 10, 2011Date of Patent: September 9, 2014Assignee: Tokyo Electron LimitedInventors: Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20140216345Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Chishio KOSHIMIZU, Masashi SAITO, Kazuki DENPOH, Jun YAMAWAKU
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Publication number: 20140216346Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Chishio KOSHIMIZU, Masashi SAITO, Kazuki DENPOH, Jun YAMAWAKU
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Patent number: 8741097Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: GrantFiled: October 27, 2010Date of Patent: June 3, 2014Assignee: Tokyo Electron LimitedInventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
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Patent number: 8608903Abstract: A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.Type: GrantFiled: October 27, 2010Date of Patent: December 17, 2013Assignee: Tokyo Electron LimitedInventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku, Hachishiro Iizuka