Abstract: An image sensor comprises: a plurality of pixels each having an avalanche photodiode; and a control unit that controls to provide to the avalanche photodiodes of the plurality of pixels a reverse bias voltage that periodically changes.

Abstract: A photoelectric conversion apparatus includes a first substrate including a photoelectric conversion element, and a second substrate including an amplification transistor and a selection transistor connected electrically to a source of the amplification transistor, the amplification transistor being configured to amplify electrons that are a signal charge output from the photoelectric conversion element. The photoelectric conversion element includes an n-type semiconductor region configured to store the electrons. The amplification transistor and the selection transistor are each a p-type metal oxide semiconductor (p-type MOS) transistor.

Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

Abstract: A photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, an output line arranged corresponding to each of the plurality of columns, a signal from a corresponding pixel being output to the output line, and a comparison unit arranged corresponding to each of the plurality of columns and having a first input terminal and a second input terminal. A signal corresponding to a potential of the output line is input to the first input terminal. A reference signal is input to the second input terminal. The comparison unit performs an offset clamping operation, and then performs comparison for analog-to-digital conversion of a signal output from a pixel.

Abstract: A photoelectric conversion device includes a plurality of pixels, a plurality of output lines, to which signals from corresponding pixels are output, respectively, an amplification unit arranged corresponding to each of the plurality of output lines and configured to amplify a signal output to a corresponding output line, a comparison unit arranged corresponding to each of the plurality of output lines and having a first input terminal and a second input terminal, a signal corresponding to an output of the amplification unit being input to the first input terminal, a reference signal being input to the second input terminal, and a switch connecting nodes of the plurality of output lines. During a period before an offset clamping operation is completed, the switch is turned on.

Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

Abstract: An image sensor comprises a pixel array having a plurality of pixels arranged in a matrix, a readout unit that controls readout of signals from the plurality of pixels, an output unit that outputs the read signals as an image signal and an extraction unit that performs feature amount extraction processing to extract a feature amount using the read signals. The readout of the signals by the readout unit and the feature amount extraction processing by the extraction unit are processed in parallel.

Abstract: An image sensor comprises: a pixel unit including a plurality of first blocks each of which includes a plurality of first pixels shielded from light and a plurality of second blocks each of which includes a plurality of second pixels that are not shielded from light; and a controller that controls a plurality of readout operations for processing, in parallel, pixel signals read out from the plurality of first blocks and the plurality of second blocks in the pixel unit. The controller performs control so as to end readout of pixel signals from at least a predetermined portion of the first pixels included in each of the plurality of first blocks, before readout of pixel signals from the plurality of second blocks is started.

Abstract: An image sensor comprises a pixel array having a plurality of pixels arranged in a matrix, a readout unit that controls readout of signals from the plurality of pixels, an output unit that outputs the read signals as an image signal and an extraction unit that performs feature amount extraction processing to extract a feature amount using the read signals. The readout of the signals by the readout unit and the feature amount extraction processing by the extraction unit are processed in parallel.

Abstract: An image capturing apparatus includes a pixel portion in which a plurality of pixel blocks are arranged, each pixel block including a predetermined number of pixels; a plurality of readout circuits arranged corresponding to the plurality of pixel blocks; a supply unit that supplies drive signals to the plurality of readout circuits; a setting unit that sets image capturing conditions for each of the plurality of pixel blocks; and a control unit that carries out control so that when the setting unit has set different image capturing conditions for a first pixel block and a second pixel block, the supply unit supplies a first drive signal to the readout circuits corresponding to the first pixel block, and supplies a second drive signal to the readout circuits corresponding to the second pixel block.

Abstract: An image sensor comprising: a generator that generates a plurality of reference signals having different slopes of potential change; a selector that selects one of the reference signals; and an analog/digital converter that converts an analog signal output from a pixel unit by first or second driving using the selected reference signal into a digital signal. In the first driving, a noise signal is converted into a plurality of first digital signals using the reference signals and a photoelectric conversion signal is converted into a second digital signal using one of the reference signals. In the second driving, the noise signal is converted into the first digital signal using a predetermined one of the reference signals and the photoelectric conversion signal is converted into the second digital signal using one of the reference signals. The first driving is performed intermittently.

Abstract: An image sensor comprises: a plurality of pixels each having an avalanche photodiode; and a control unit that controls to provide to the avalanche photodiodes of the plurality of pixels a reverse bias voltage that periodically changes.

Abstract: An image capturing apparatus includes a pixel portion in which a plurality of pixel blocks are arranged, each pixel block including a predetermined number of pixels; a plurality of readout circuits arranged corresponding to the plurality of pixel blocks; a supply unit that supplies drive signals to the plurality of readout circuits; a setting unit that sets image capturing conditions for each of the plurality of pixel blocks; and a control unit that carries out control so that when the setting unit has set different image capturing conditions for a first pixel block and a second pixel block, the supply unit supplies a first drive signal to the readout circuits corresponding to the first pixel block, and supplies a second drive signal to the readout circuits corresponding to the second pixel block.

Abstract: An image sensor comprises: a pixel unit including a plurality of first blocks each of which includes a plurality of first pixels shielded from light and a plurality of second blocks each of which includes a plurality of second pixels that are not shielded from light; and a controller that controls a plurality of readout operations for processing, in parallel, pixel signals read out from the plurality of first blocks and the plurality of second blocks in the pixel unit. The controller performs control so as to end readout of pixel signals from at least a predetermined portion of the first pixels included in each of the plurality of first blocks, before readout of pixel signals from the plurality of second blocks is started.

Abstract: An image sensor comprising: a generator that generates a plurality of reference signals having different slopes of potential change; a selector that selects one of the reference signals; and an analog/digital converter that converts an analog signal output from a pixel unit by first or second driving using the selected reference signal into a digital signal. In the first driving, a noise signal is converted into a plurality of first digital signals using the reference signals and a photoelectric conversion signal is converted into a second digital signal using one of the reference signals. In the second driving, the noise signal is converted into the first digital signal using a predetermined one of the reference signals and the photoelectric conversion signal is converted into the second digital signal using one of the reference signals. The first driving is performed intermittently.

Abstract: In a photoelectric conversion apparatus, the number of differential transistors in which ON states thereof overlap with one another is increased when the number of the amplification transistors in which ON states thereof overlap with one another is increased.

Abstract: A solid-state image sensor has a pixel array and a processor configured to process a signal from the pixel array, the pixel array including a light-receiving pixel having first and second photoelectric converters and a light-shielded pixel having third and fourth photoelectric converters. The processor outputs (a) a pixel signal corresponding to charges of the first photoelectric converter, (b) an added pixel signal corresponding to a sum of charges of the first photoelectric converter and charges of the second photoelectric converter, and (c) an added reference signal corresponding to a sum of charges of the third photoelectric converter and charges of the fourth photoelectric converter, and does not output (d) a reference signal corresponding to charges of the third photoelectric converter and a reference signal corresponding to charges of the fourth photoelectric converter.

Abstract: A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.

Abstract: The present invention provides a driving method for an image pickup apparatus that appropriately performs both readout of a signal of a reference pixel and mixing of mutual signals output by a plurality of effective pixels, and the present invention also provides an image pickup apparatus and an image pickup system.

Abstract: Provided is a solid-state image pickup apparatus, including: a pixel region, in which a plurality of pixels each including an amplifier transistor are arranged two-dimensionally in rows and columns, and which includes an n-row signal mixing region in which outputs of n amplifier transistors are mixed, where n is a natural number of 1 or more, and an m-row signal mixing region in which outputs of m amplifier transistors are mixed, where m>n; a column signal line to which a voltage from the amplifier transistor is output; and a clipping circuit, which is configured to clip a voltage in the column signal line, and is arranged at a position that is closer to the n-row signal mixing region than to the m-row signal mixing region.