Abstract: The present invention provides a driving method for an image pickup apparatus that appropriately performs both readout of a signal of a reference pixel and mixing of mutual signals output by a plurality of effective pixels, and the present invention also provides an image pickup apparatus and an image pickup system.

Abstract: A solid-state imaging apparatus is provided. The apparatus may include a plurality of pixels each including a first photoelectric conversion element and a second photoelectric conversion element, a processing circuit configured to perform a first process for generating a first signal corresponding to a charge generated by the first photoelectric conversion element, and a second process for generating a second signal corresponding to a sum of the charge generated by the first photoelectric conversion element and a charge generated by the second photoelectric conversion element, and a current source configured to supply a first driving current to the processing circuit when the processing circuit performs the first process, and supply a second driving current higher than the first driving current to the processing circuit when the processing circuit performs the second.

Abstract: A solid-state image sensor has a pixel array and a processor configured to process a signal from the pixel array, the pixel array including a light-receiving pixel having first and second photoelectric converters and a light-shielded pixel having third and fourth photoelectric converters. The processor outputs (a) a pixel signal corresponding to charges of the first photoelectric converter, (b) an added pixel signal corresponding to a sum of charges of the first photoelectric converter and charges of the second photoelectric converter, and (c) an added reference signal corresponding to a sum of charges of the third photoelectric converter and charges of the fourth photoelectric converter, and does not output (d) a reference signal corresponding to charges of the third photoelectric converter and a reference signal corresponding to charges of the fourth photoelectric converter.

Abstract: There is provided an imaging device. In the imaging device, when a range of the signal amplitude available for a signal output from a pixel cell is small, a period, in which a signal in a buffer unit is output, is set shorter than that when the range is large.

Abstract: In a photoelectric conversion apparatus, the number of differential transistors in which ON states thereof overlap with one another is increased when the number of the amplification transistors in which ON states thereof overlap with one another is increased.

Abstract: Provided is a solid-state imaging apparatus, including: a pixel array including: a first, a second, and a third non-effective pixel rows each including a non-effective pixel configured to output a signal that is independent of an amount of incident light; and a second pixel region having effective pixel rows each including an aperture pixel configured to output a signal that is dependent on an amount of incident light; and a mixing portion configured to: mix a signal output from the non-effective pixel in the first non-effective pixel row and a signal output from the non-effective pixel in the second non-effective pixel row; mix the signal output from the non-effective pixel in the first non-effective pixel row and a signal output from the non-effective pixel in the third non-effective pixel row; and mix signals together, which are output from the aperture pixels in the effective pixel rows.

Abstract: A solid-state image sensor has a pixel array and a processor configured to process a signal from the pixel array, the pixel array including a light-receiving pixel having first and second photoelectric converters and a light-shielded pixel having third and fourth photoelectric converters. The processor outputs (a) a pixel signal corresponding to charges of the first photoelectric converter, (b) an added pixel signal corresponding to a sum of charges of the first photoelectric converter and charges of the second photoelectric converter, and (c) an added reference signal corresponding to a sum of charges of the third photoelectric converter and charges of the fourth photoelectric converter, and does not output (d) a reference signal corresponding to charges of the third photoelectric converter and a reference signal corresponding to charges of the fourth photoelectric converter.

Abstract: A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.

Abstract: A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels arranged in a matrix, a plurality of signal processing units each corresponding to a column of the matrix, and a signal line. Each of the plurality of signal processing units includes a first capacitance and a second capacitance that hold a signal, a switch provided between the signal line and the first capacitance, a capacitance adjustment unit electrically connected to the second capacitance, and a connection unit configured to electrically connect the first capacitance provided to one of signal processing units to the second capacitance provided to another one of the signal processing units.

Abstract: Provided is a solid-state image pickup apparatus, including: a pixel region, in which a plurality of pixels each including an amplifier transistor are arranged two-dimensionally in rows and columns, and which includes an n-row signal mixing region in which outputs of n amplifier transistors are mixed, where n is a natural number of 1 or more, and an m-row signal mixing region in which outputs of m amplifier transistors are mixed, where m>n; a column signal line to which a voltage from the amplifier transistor is output; and a clipping circuit, which is configured to clip a voltage in the column signal line, and is arranged at a position that is closer to the n-row signal mixing region than to the m-row signal mixing region.

Abstract: An image sensor includes a pixel unit having first and second photoelectric converters, an amplifier provided commonly for the first and second photoelectric converters, first and second transfer transistors configured to respectively transfer charges generated in the first and second electric converters to an input portion of the amplifier. The signal read out by the readout portion includes a first optical signal read out in a state in which charges are transferred from the first photoelectric converter to the input portion by the first transfer transistor, and a second optical signal read out, after the readout of the first optical signal, in a state in which charges are transferred from the second photoelectric converter to the input portion by the second transfer transistor.

Abstract: A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.

Abstract: The present invention provides a driving method for an image pickup apparatus that appropriately performs both readout of a signal of a reference pixel and mixing of mutual signals output by a plurality of effective pixels, and the present invention also provides an image pickup apparatus and an image pickup system.

Abstract: Provided is a solid-state imaging apparatus, including: a pixel array including: a first, a second, and a third non-effective pixel rows each including a non-effective pixel configured to output a signal that is independent of an amount of incident light; and a second pixel region having effective pixel rows each including an aperture pixel configured to output a signal that is dependent on an amount of incident light; and a mixing portion configured to: mix a signal output from the non-effective pixel in the first non-effective pixel row and a signal output from the non-effective pixel in the second non-effective pixel row; mix the signal output from the non-effective pixel in the first non-effective pixel row and a signal output from the non-effective pixel in the third non-effective pixel row; and mix signals together, which are output from the aperture pixels in the effective pixel rows.

Abstract: Provided is a solid-state imaging apparatus, including: a plurality of photoelectric conversion elements each configured to generate charges by photoelectric conversion; and a plurality of transfer transistors, which are connected to the plurality of photoelectric conversion elements, respectively, each configured to transfer the generated charges to the same floating diffusion, in which the plurality of transfer transistors are each configured to be on/off controlled based on a voltage input to a gate terminal thereof, and a length of a period during which the voltage input to the gate terminal changes when a corresponding one of the plurality of transfer transistors is switched from on to off varies from one transfer transistor to another.

Abstract: A semiconductor apparatus, comprising a decoder arranged in a path between a first power supply line and a second power supply line and configured to receive a signal and decode the signal, a switch portion arranged, in series with the decoder, in the path between the first power supply line and the second power supply line, and a control unit configured to set the switch portion in a conductive state so as to cause the decoder to decode the signal after the signal has changed from one of high level and low level to the other.

Abstract: A solid-state image sensor includes a plurality of pixels for focus detection by a phase difference detection scheme. The pixel includes a semiconductor region provided therein with a plurality of photoelectric converters configured so that signals therefrom are independently read out, a microlens, and a lens surface arranged between the microlens and the semiconductor region, wherein the lens surface exerts a negative power on light which passes through the microlens toward the semiconductor region.

Abstract: There is provided an imaging device. In the imaging device, when a range of the signal amplitude available for a signal output from a pixel cell is small, a period, in which a signal in a buffer unit is output, is set shorter than that when the range is large.

Abstract: A solid-state imaging apparatus is provided. The apparatus may include a plurality of pixels each including a first photoelectric conversion element and a second photoelectric conversion element, a processing circuit configured to perform a first process for generating a first signal corresponding to a charge generated by the first photoelectric conversion element, and a second process for generating a second signal corresponding to a sum of the charge generated by the first photoelectric conversion element and a charge generated by the second photoelectric conversion element, and a current source configured to supply a first driving current to the processing circuit when the processing circuit performs the first process, and supply a second driving current higher than the first driving current to the processing circuit when the processing circuit performs the second.