Abstract: A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.

Abstract: A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.

Abstract: A solid-state image sensor has a pixel array and a processor configured to process a signal from the pixel array, the pixel array including a light-receiving pixel having first and second photoelectric converters and a light-shielded pixel having third and fourth photoelectric converters. The processor outputs (a) a pixel signal corresponding to charges of the first photoelectric converter, (b) an added pixel signal corresponding to a sum of charges of the first photoelectric converter and charges of the second photoelectric converter, and (c) an added reference signal corresponding to a sum of charges of the third photoelectric converter and charges of the fourth photoelectric converter, and does not output (d) a reference signal corresponding to charges of the third photoelectric converter and a reference signal corresponding to charges of the fourth photoelectric converter.

Abstract: An image sensor includes a pixel unit having first and second photoelectric converters, an amplifier provided commonly for the first and second photoelectric converters, first and second transfer transistors configured to respectively transfer charges generated in the first and second electric converters to an input portion of the amplifier. The signal read out by the readout portion includes a first optical signal read out in a state in which charges are transferred from the first photoelectric converter to the input portion by the first transfer transistor, and a second optical signal read out, after the readout of the first optical signal, in a state in which charges are transferred from the second photoelectric converter to the input portion by the second transfer transistor.

Abstract: A solid-state image sensor includes a plurality of pixels for focus detection by a phase difference detection scheme. The pixel includes a semiconductor region provided therein with a plurality of photoelectric converters configured so that signals therefrom are independently read out, a microlens, and a lens surface arranged between the microlens and the semiconductor region, wherein the lens surface exerts a negative power on light which passes through the microlens toward the semiconductor region.