Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: A human antibody or a functional fragment thereof having specific binding ability to CD98 which is derived from the cell membrane of cancer cells and is in the form of a complex with a protein having an amino acid transporter activity (for example, LAT1) is disclosed. This antibody binds to CD98 in the form of a dimer with LAT1 on the surface of cancer cells, specifically attacks cancer cells expressing CD98 via the immune system by ADCC or CDC, and further inhibits amino acid uptake of the cancer cells via LAT1, to suppress growth of the cancer cells. Accordingly, a preventive and therapeutic agent for cancer comprising this antibody or a fragment thereof, which acts on various cancers, is specific to cancer, and causes no side effect, is provided.

Abstract: The present invention provides an anti-tumor agent comprising a human R-spondin including R-spondin1 (GIPF), R-spondin2, R-spondin3 or R-spondin4, or a fragment thereof which has human R-spondin activity as an active ingredient.

Abstract: A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.

Abstract: An object of the present invention is to provide compounds having potent antitumor activity. The compounds according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof: wherein X and Z represent CH or N; Y represents O or S; R1, R2, and R3 represent H, alkoxy or the like; R4 represents H; R5, R6, R7, and R8 represent H, halogen, alkoxy or the like; R9 and R10 represent H, alkyl or the like; and R11 represents optionally substituted azolyl.

Abstract: A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.

Abstract: A first electrode layer 12, a first piezoelectric film layer 13, a second electrode layer 14, a second piezoelectric film layer 15, and a third electrode layer 16 are layered in that order on a substrate 11; these are constrained so as pot to expand or contract in a thickness direction and a piezoelectric transducer is constructed thereby.

Abstract: A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.

Abstract: A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.

Abstract: The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has a superior degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved, the production yield is increased and costs are reduced. A ferroelectric memory having improved angularity in the hysteresis curve, and superior memory characteristics, production yield and costs is realized as follows. Namely, a peripheral circuit chip and a memory cell array chip are engaged onto an inexpensive assembly base 300 such as glass or plastic. In memory cell array chip 200, a ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer layer and first signal electrode. As a result, a ferroelectric memory can be realized which has improved angularity in the hysteresis curve and superior memory characteristics, production yield, and cost.

Abstract: A memory cell array is provided that includes ferroelectric capacitors with enhanced characteristics, a method of making the same, and a ferroelectric memory device including the memory cell. In a memory cell array, memory cells including ferroelectric capacitors are arrayed in a matrix. Each ferroelectric capacitor includes a lower electrode, an upper electrode, and a ferroelectric section disposed between the lower electrode and the upper electrode. The ferroelectric section is disposed in an intersection between the lower electrode and the upper electrode. An intermediate electrode is disposed between the ferroelectric section 14 and the upper electrode.

Abstract: The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance of load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.

Abstract: A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.

Abstract: A ferroelectric memory device includes a simple matrix type memory cell array. Provided that the maximum absolute value of a voltage applied between a first signal electrode and a second signal electrode is Vs, polarization P of a ferroelectric capacitor formed of the first electrode, the second electrode, and ferroelectric layer is within the range of 0.1P(+Vs)<P(?1/3Vs) when the applied voltage is changed from +Vs to ?1/3Vs, and 0.1P(?Vs)>P(+1/3Vs) when the applied voltage is changed from ?Vs to +1/3Vs.