Abstract: In a solid state image sensing device comprising: a semiconductor substrate; a photosensitive pixel area disposed on the semiconductor substrate for generating signal charges in response to incident light and storing the signal charges; a charge transfer area disposed adjacent to the photosensitive pixel area for transferring the signal charges stored in the photosensitive pixel area; and a transfer electrode provided above the charge transfer area, the solid state image sensing device comprises: a high melting temperature metal layer composed of molybdenum silicide MoSi formed above the transfer electrode and an insulating layer having ample thickness formed between the high melting temperature metal layer and the transfer electrode. The light shielding efficiency can be improved and occurrence of a smear phenomenon can be prevented in the resulting device.