Patents by Inventor Kazunori Hagimoto

Kazunori Hagimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting device and method of fabricating the same
    Patent number: 7041529
    Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: May 9, 2006
    Assignees: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Jun-ya Ishizaki, Nobuhiko Noto, Kazunori Hagimoto, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Light-emitting device and method of fabricating the same
    Publication number: 20040135166
    Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
    Type: Application
    Filed: October 22, 2003
    Publication date: July 15, 2004
    Applicants: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation
    Inventors: Masato Yamada, Jun-ya Ishizaki, Nobuhiko Noto, Kazunori Hagimoto, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
    Publication number: 20040104395
    Abstract: A light-emitting device which uses a reflective metal layer, and thereby has a large light extraction efficiency and a small wavelength dependence is disclosed. The device uses one main surface of a light-emitting layer portion as a light extraction surface, and has a device substrate bonded on other main surface of the light-emitting layer portion. The device also has an Ag-base metal layer disposed between the device substrate and the light-emitting layer portion, wherein the Ag-base reflective metal layer has Ag as a major component over the entire portion thereof, and is intended for reflecting the light from the light-emitting layer portion back towards the light extraction surface side.
    Type: Application
    Filed: November 24, 2003
    Publication date: June 3, 2004
    Applicant: Shin-Etsu Handotai Co., Ltd.
    Inventors: Kazunori Hagimoto, Nobuhiko Noto