Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si—O bond in a gaseous phase, thereby depositing a film containing the fine particles on the processing target; and removing the fine organic particles from the film.

Abstract: The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Abstract: Disclosed is a composition comprising a hydrolysate of an alkoxysilane compound, a hydrolysate of a siloxane compound represented by Formula (1), a surfactant, and an element having an electronegativity of 2.5 or less. In Formula (1), RA and RB independently represent a hydrogen atom, a phenyl group, —CaH2a+1, —(CH2)b(CF2)cCF3 or —CdH2d?1, RA and RB are not both hydrogen atoms simultaneously, RC and RD independently represent a single bond that links a silicon atom and an oxygen atom to form a cyclic siloxane structure, or each independently represent a hydrogen atom, a phenyl group, —CaH2a+1, —(CH2)b(CF2)cCF3, or —CdH2d?1, a represents an integer of 1 to 6, b represents an integer of 0 to 4, c represents an integer of 0 to 10, d represents an integer of 2 to 4, and n represents an integer of 3 or greater.

Abstract: The present invention relates to a method for modifying a porous film mainly having Si—O bonds wherein a thermal treatment is conducted without using a metal catalyst by bringing an organic silicon compound into contact with the porous film. The organic silicon compound includes one or more Si—X—Si bond unit (wherein X represents O, NR, CnH2n, or C6H4; R represents CmH2m+1 or C6H5; m is an integer between 1 and 6; and n is 1 or 2) and two or more Si-A bond units (wherein A represents H, OH, OCeH2e+1 or a halogen atom and can be the same or different within a single molecule; and e is an integer between 1 and 6). Since the porous film obtained by this method is excellent in the hydrophobic property and the mechanical strength, it can be used as an optically functional material or an electronically functional material. The porous film is especially useful as a semiconductor material, and can be preferably used as an interlayer insulating film in a semiconductor device.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

Abstract: A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C6H5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.

Abstract: Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula Ra(Si) (OR2)4-a (in the formulas represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.

Abstract: A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR1)4 and Ra(Si)(OR2)4-a (in the formulas, R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250° C.; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength.

Abstract: A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

Abstract: A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Abstract: The coating liquid for forming porous silica according to the present invention is characterized by preferably containing a partial hydrolysis-condensation product of an alkoxysilane compound, a surfactant and an organic ampholyte, and by having a metal content of not more than 50 ppb. Conventional coating liquids for forming porous silica have such a problem that porous silica films formed therefrom may have poor regularity in micropore alignment when the shelf life of the coating liquids are long. On the contrary, the coating liquid for forming porous silica of the present invention is excellent in self-life stability. Namely, the quality of porous silica formed therefrom is hardly affected by the length of self-life period of the coating liquid.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si—O bond in a gaseous phase, thereby depositing a film containing the fine particles on the processing target; and removing the fine organic particles from the film.

Abstract: A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

Abstract: The coating liquid for forming porous silica according to the present invention is characterized by preferably containing a partial hydrolysis-condensation product of an alkoxysilane compound, a surfactant and an organic ampholyte, and by having a metal content of not more than 50 ppb. Conventional coating liquids for forming porous silica have such a problem that porous silica films formed therefrom may have poor regularity in micropore alignment when the shelf life of the coating liquids are long. On the contrary, the coating liquid for forming porous silica of the present invention is excellent in self-life stability. Namely, the quality of porous silica formed therefrom is hardly affected by the length of self-life period of the coating liquid.

Abstract: The present invention relates to a method for modifying a porous film mainly having Si—O bonds wherein a thermal treatment is conducted without using a metal catalyst by bringing an organic silicon compound into contact with the porous film. The organic silicon compound includes one or more Si—X—Si bond unit (wherein X represents O, NR, CnH2n, or C6H4; R represents CmH2m+1 or C6H5; m is an integer between 1 and 6; and n is 1 or 2) and two or more Si-A bond units (wherein A represents H, OH, OCeH2e+1 or a halogen atom and can be the same or different within a single molecule; and e is an integer between 1 and 6). Since the porous film obtained by this method is excellent in the hydrophobic property and the mechanical strength, it can be used as an optically functional material or an electronically functional material. The porous film is especially useful as a semiconductor material, and can be preferably used as an interlayer insulating film in a semiconductor device.

Abstract: Water-repellent porous silica having uniform pores, which comprises silica skeleton wherein fluorine atoms are fixed through covalent bonds and which has an alkali metal content of not more than 10 ppb, is synthesized. By the water-repellent porous silica, a water-repellent porous silica film having uniform pores, which is applicable to a light functional material or an electron functional material, a process for preparing the same and uses thereof can be provided.