Abstract: According to one embodiment, a semiconductor device includes a re-interconnection layer, bumps, chips, and a resin member. The bumps are provided on a first surface of the re-interconnection layer. The chips are stacked on a second surface of the re-interconnection layer. The resin member is provided on the second surface, and covers the chips. The re-interconnection layer includes an insulating layer, an interconnection, a first via, an electrode layer, and a second via. The interconnection is provided in the insulating layer. The first via is provided in the insulating layer and connected to the interconnection. The electrode layer is provided in the insulating layer, formed of a metal material different from a material of the first via, exposed on the first surface, and connected to the first via and the bumps. The second via is provided in the insulating layer, and connected to the interconnection and the chips.

Abstract: An etching method according to an embodiment includes forming an uneven structure including a projection on a surface of a semiconductor substrate; forming a catalyst layer including a noble metal on the surface selectively at a top surface of the projection; and supplying an etchant to the catalyst layer to cause an etching of the semiconductor substrate with an assist from the noble metal as a catalyst.

Abstract: A semiconductor device includes a base including interconnects, a first semiconductor chip including a first semiconductor element portion, and a second semiconductor chip including a second semiconductor element portion. The second semiconductor chip is electrically connected to the first semiconductor chip via at least one of the interconnects. The second semiconductor chip includes a first region, a first portion, and a second portion. The first region includes the second semiconductor element portion. The first portion is continuous with the first region. The second portion is continuous with the first region and is separated from the first portion in a second direction crossing a first direction. The first direction is from the base toward the first region. The second portion, the first portion, and at least a portion of the first semiconductor chip each is positioned between the base and the first region.

Abstract: a method of fabricating a semiconductor device is described below. The method includes stacking a plurality of semiconductor chips on each of regions in a substrate having a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction intersecting the first direction, the region being defined by the first grooves and the second grooves, providing an encapsulation portion covering a side of the substrate on which the semiconductor chips are stacked, removing a surface portion of the substrate on the opposite side to the side on which the semiconductor chips are stacked to expose the first grooves and the second grooves, and cutting the encapsulation portion along the first grooves and of second grooves. The device and the method can provide higher productivity.

Abstract: A semiconductor device includes a substrate, a device layer, and a film. The substrate includes a first semiconductor element, and has a first surface, a second surface, and a side surface between the first surface and the second surface. The device layer includes a second semiconductor element electrically connected to the first semiconductor element, and is provided on the first surface of the substrate. The film includes a first film including a first region, a second region, and a third region. The substrate is positioned between the first region and the device layer in a first direction. The substrate is positioned between the second region and the third region in a second direction crossing the first direction. The first film fills the unevenness of the second surface and the side surface.

Abstract: An etching method according to an embodiment includes forming a catalyst layer made of a first noble metal or the combination of the second noble metal and the metal other than noble metals on a surface made of a semiconductor, the catalyst layer including a first portion and a second portion, the first portion covering at least a part of the surface, the second portion being located on the first portion, having an apparent density lower than that of the first portion, and being thicker than the first portion; and supplying an etchant to the catalyst layer to cause an etching of the surface with an assist from the catalyst layer as a catalyst.

Abstract: A magnetic shielded package includes a magnetic device, a first magnetic shield member, and a second magnetic shield member. The first magnetic shield member is disposed below the magnetic device. The second magnetic shield member is disposed on the first magnetic shield member so as to cover the magnetic device. An opening portion is formed in the first magnetic shield member (i) at such a position as not to be adjacent to an outer circumference of the first magnetic shield member or (ii) an upper wall of the second magnetic shield member.

Abstract: An etching method according to an embodiment includes forming a catalyst layer made of a first noble metal or the combination of the second noble metal and the metal other than noble metals on a surface made of a semiconductor, the catalyst layer including a first portion and a second portion, the first portion covering at least a part of the surface, the second portion being located on the first portion, having an apparent density lower than that of the first portion, and being thicker than the first portion; and supplying an etchant to the catalyst layer to cause an etching of the surface with an assist from the catalyst layer as a catalyst.

Abstract: According to one embodiment, a printed wiring board includes a first magnetic layer, a second magnetic layer, an insulating layer, a first conductor layer, and a second conductor layer. The insulating layer is provided between the first magnetic layer and the second magnetic layer. The first conductor layer is provided between the insulating layer and the first magnetic layer. The second conductor layer is provided between the insulating layer and the second magnetic layer.

Abstract: a method of fabricating a semiconductor device is described below. The method includes stacking a plurality of semiconductor chips on each of regions in a substrate having a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction intersecting the first direction, the region being defined by the first grooves and the second grooves, providing an encapsulation portion covering a side of the substrate on which the semiconductor chips are stacked, removing a surface portion of the substrate on the opposite side to the side on which the semiconductor chips are stacked to expose the first grooves and the second grooves, and cutting the encapsulation portion along the first grooves and of second grooves. The device and the method can provide higher productivity.

Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

Abstract: A magnetic shielded package includes a magnetic device, a first magnetic shield member, and a second magnetic shield member. The first magnetic shield member is disposed below the magnetic device. The second magnetic shield member is disposed on the first magnetic shield member so as to cover the magnetic device. An opening portion is formed in the first magnetic shield member (i) at such a position as not to be adjacent to an outer circumference of the first magnetic shield member or (ii) an upper wall of the second magnetic shield member.

Abstract: According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous existence of the light-emitting element section is equal to or higher than 10 lm/mm2 and equal to or lower than 100 lm/mm2. The thermal radiation member has an area equal to or larger than five times the area of the mounting region.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

Abstract: According to an exemplary embodiment, there is provided a light emitting device including a ceramic substrate, first to fourth connectors, a plurality of semiconductor light emitting elements, and a first metal layer. The ceramic substrate is provided with a first main surface including first to fourth sides and first to fourth corner portions, and the first main surface includes a mounting region, and first to fourth connector region provided respectively between the first to fourth corner portion and the mounting region. The plurality of semiconductor light emitting elements is provided on the mounting region. The first to fourth connectors are respectively provided on the first to fourth connector regions. A first metal layer is provided between the plurality of semiconductor light emitting elements and the ceramic substrate, and including first to fourth connector electrode portions electrically connected respectively to the first to fourth connectors.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to an embodiment, a light emitting device including a substrate, a plurality of semiconductor light emitting elements and a wavelength conversion layer is provided. The semiconductor light emitting elements are provided on the substrate. The wavelength conversion layer covers the semiconductor light emitting elements and converts a wavelength of light emitted from the semiconductor light emitting elements. A first distance between an upper surface of the wavelength conversion layer in a first region between two adjacent semiconductor light emitting elements in the semiconductor light emitting elements and the substrate is shorter than a second distance between the upper surface of the wavelength conversion layer and the substrate in a second region on the two adjacent semiconductor light emitting elements.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.