Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.

Abstract: While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.

Abstract: A manufacturing system for printed wiring boards divides printed wiring boards scheduled to be manufactured into non-fractional and fractional groups depending on the content of an order remainder list. The printed wiring boards categorized as non-fractional are panelized having the same shapes while the printed wiring boards categorized as fractional are grouped corresponding to manufacturing conditions thereof. Then, each group of the printed wiring boards are panelized with different shapes in a predetermined manufacturing block. Consequently, the generation of incidental products or the waste of material can be prevented.

Abstract: This invention is a method of manufacturing a multi-layer printed wiring board including an internal layer circuit forming step, a outer layer circuit forming step, and a solder resist forming step. In the solder resist forming step, the surface of a board subjected to the outer layer circuit forming step is coated with a photosensitive solder resist material, the solder resist material is coated with a photosensitive film; a light shielding mask is formed by irradiating a laser beam on the photosensitive film according to a formed pattern of the solder resist, the solder resist material is exposed by using the light shielding mask, the light shielding mask is removed, and the solder resist material which is not exposed is removed.

Abstract: A bipolar transistor is composed of a collector region, a base region connected to the collector region, an emitter region connected to the base region, an emitter electrode, a base electrode, and at lease one of first and second resistive layers of granular metal-dielectric material. The first resistive layer is disposed between the emitter region and the emitter electrode, and the second resistive layer is disposed between the base region and the base electrode. The resistivity of granular metal-dielectric material is widely adjustable by a volume ratio of metal granules to a dialectic matrix. This allows the resistive layers to have a sufficiently large perpendicular resistance to avoid thermal runaway with a reduced thickness.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.

Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A novel method for detecting LDL and denatured LDL (particularly, oxidized LDL) having a significant concerning with the onset and progress of arteriosclerosis and Alzheimer's disease is provided, wherein a complex of denatured low density lipoprotein (particularly, oxidized LDL) with an acute phase reactant, blood coagulation.fibrinolytic related protein or disinfectant substance produced by macrophage is used as a measuring subject.

Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.

Abstract: A rocker arm is tilted by a cam so as to open and close a valve provided on a cylinder head. This arm comprises a pair of opposing wall portions which are made by folding a flat plate so that they oppose substantially in parallel and cylindrical expanding portions which are formed at tilting fulcrum shaft mounting portions located in a center of the opposing wall portions in the length direction thereof, the expanding portions being expanded in the direction of the tilting fulcrum shaft. The cylindrical expanding portions which are thicker than the opposing wall portions receive a load accompanied by the tilting motion so as to decrease bearing stress applied to the opposing wall portions.

Abstract: While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.

Abstract: A unit structure part of scaffold steel pipes are disclosed, including an L-shaped unit structure part 21, a T-shaped unit structure part 31, a normal 3-direction unit structure part 32, a cross-shaped unit structure part 33, a normal 6-direction unit structure part 34, a T-shaped joint member 35, a cross-shaped joint member 42 and/or a normal 4-direction joint member 45, all of which are of a same outer diameter and of a same material with those of a scaffold steel pipe and may be optionally used in combination with scaffold steel pipes 22 and joint members 23 which may be available in the market, thereby to construct a structure of optional shape.

Abstract: A rocker arm is tilted by a cam so as to open and close a valve provided on a cylinder head. This arm comprises a pair of opposing wall portions which are made by folding a flat plate so that they oppose substantially in parallel and cylindrical expanding portions which are formed at tilting fulcrum shaft mounting portions located in a center of the opposing wall portions in the length direction thereof, the expanding portions being expanded in the direction of the tilting fulcrum shaft. The cylindrical expanding portions which are thicker than the opposing wall portions receive a load accompanied by the tilting motion so as to decrease bearing stress applied to the opposing wall portions.

Abstract: An rocker arm is tilted by a cam so as to open and close a valve provided on a cylinder head. This arm comprises a pair of opposing wall portions which are made by folding a flat plate so that they oppose substantially in parallel and cylindrical expanding portions which are formed at tilting fulcrum shaft mounting portions located in a center of the opposing wall portions in the length direction thereof, the expanding portions being expanded in the direction of the tilting fulcrum shaft. The cylindrical expanding portions which are thicker than the opposing wall portions receive a load accompanied by the tilting motion so as to decrease bearing stress applied to the opposing wall portions.

Abstract: A rocker arm is tilted by a cam so as to open and close a valve provided on a cylinder head. This arm comprises a pair of opposing wall portions which are made by folding a flat plate so that they oppose substantially in parallel and cylindrical expanding portions which are formed at tilting fulcrum shaft mounting portions located in a center of the opposing wall portions in the length direction thereof, the expanding portions being expanded in the direction of the tilting fulcrum shaft. The cylindrical expanding portions which are thicker than the opposing wall portions receive a load accompanied by the tilting motion so as to decrease bearing stress applied to the opposing wall portions.

Abstract: A rocker arm with a roller made with a metal plate and utilized in a valve actuating System of an engine is provided. The roller mounting rocker arm includes a rocker arm body (11) having a pair of side walls (11c) and a connecting portion 12 for connecting the side walls (11c), a roller (7) mounted between the side walls (11c), a pivot engageable recess (12a) formed on the connecting portion by drawing, and a valve stem receiving portion (14) formed at the other end of the side walls (11c). This roller mounting rocker arm has a high rigidity and is suitable for mass-production, and low cost is realized.