Abstract: A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two- and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

Abstract: A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

Abstract: A semiconductor integrated circuit device supplied as an IP (Intellectual Property), etc., a method of manufacturing the device, and a medium for storing a processing procedure for deciding the number of delay circuits built in the device used for designing, more particularly to a semiconductor integrated circuit device which guarantees the characteristics of writing into and reading from the built-in memory even when the manufacturing process conditions are varied. The semiconductor integrated circuit device is provided with a cache memory which includes a BIST circuit composed of a pattern generator, a pattern comparator, and an output register; a register controlled by a register control signal and a register write signal; a variable delay circuit controlled by the register; word lines, and a sense amplifier enable signal line. The timing for enabling the sense amplifier is changed and the memory is measured by a BIST circuit at the timing, thereby deciding the optimal timing.

Abstract: This invention provides a storage medium on which there is stored a cell library to design a semiconductor integrated circuit to satisfy low power consumption and high speed operation and a design method using the cell library. The cell library is registered with at least two kinds of cells which are different in delay and power consumption while having the same function and the same shape. To satisfy the specification of the semiconductor integrated circuit, one cell is selected from at least two kinds of cells of the cell library.

Abstract: The present invention provides a movable defensive apparatus in which a dedicated source of power for driving a relatively heavy defensive wall and an installation space are not required, whereby entry of a mob, a runaway vehicle, and the like, can be prevented, the entry of rainwater, and the like, can also be prevented to some extent. The movable defensive apparatus includes a defensive wall (2) disposed in the vicinity of a doorway (O•I) of a site (G), such as a house, and an installation in the vicinity of a doorway (O•I), a window or the like, of a building for preventing rainwater and undesirable entry of objects, such as a mob or a runaway vehicle from entering the site (g) or a building. Also described is a piston cylinder unit (20, 20) which is operated by running water for driving the defensive wall (2) from a machine room (M•R) to a predetermined upper position along a guide device (10, 10).

Abstract: A method for designing a logic circuit and a CAD program which allow a logic circuit with desired performance to be designed in a short period of time by suppressing the elongation of a logic design period for achieving a circuit area, an operating speed, power consumption, and the like as target specifications are provided at low cost. Shorter-period and lower-cost design is accomplished by allowing a user to use a high-performance logic synthesis CAD program at no charge if he only checks circuit characteristics resulting from synthesis and collecting a fee if the user is satisfied with the resulting circuit characteristics and intends to use a gate level logic circuit. In a design phase which receives a register transfer level or operation level logic circuit and synthesizes a gate level logic circuit, desired circuit characteristics are obtainable in a short period of time at low cost.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: A computer readable medium is arranged to record a circuit description having a description of a function of the circuit module and an interface description provided by distinguishing sets of possible signal values each output terminal may take on plural time points at each pattern and adding an identifier to each of said sets for defining said set and representing said function of said hardware description with the set of said identifiers on a temporal order.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: A pass-transistor logic circuit configuration that can form a high-speed chip in a small area with short wire length. In a selector circuit PMOS and NMOS transistors with different gate signals but with the same drain outputs are arranged, respectively, so their diffusion layers are shared. The PMOS and NMOS are staggered so that their gates are almost in line. With this arrangement, wires connecting drains of the PMOS and NMOS and wires connecting sources of the PMOS and NMOS do not intersect each other, so they can be wired with only the first wiring layer. Further, gate input signals can be wired with only polysilicon wires without crossing each other. The pass-transistor logic circuit is made to pass through the signal buffers before or after it is connected to the selector. This can make a compact, fast circuit.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

Abstract: A method, system, and library for generating high-speed logic circuits with reduced path depths even in cases when a critical path diverges into a plurality of paths that eventually converge. By replacing the gates of a logic circuit by selectors with two inputs and one output, a selector-based circuit is generated where a local circuit between the path divergence node and convergence node is detected. The stages of the critical path are reduced by replacing the local circuit by a logically equivalent selector with two inputs and one output; wherein one input of the selector is controlled by a circuit formed by inputting a logical value of “0” to the divergence node from which the local circuit is developed and a second input of the selector is controlled by a circuit formed by inputting a logical value of “1” to the divergence node.

Abstract: A semiconductor memory device comprises a first transistor including a source region, a drain region, a first channel region of a semiconductor material formed on an insulating film and connecting the source region and the drain region, and a gate electrode for controlling potential of the first channel region; a second transistor including a source region, a drain region, a second channel region of a semiconductor material connecting the source region and the drain region, a second gate electrode for controlling potential of the second channel region, and a charge storage region coupled with the second channel region by electrostatic capacity; wherein the source region of the second transistor is connected to a source line, one end of the source or the drain region of the first transistor is connected to the charge storage region of the second transistor, the other end of the source or the drain region of the first transistor is connected to a data line.

Abstract: A tube fitting capable of absorbing vibration and shock resulting from a high pressure fluid passing through the tube fitting while it is used includes a connection head, a connection nipple, and an intermediate connection member. The connection head and the connection nipple are provided with an annular collar projecting from an end surface of the connection head and the connection nipple. The connection head, the connection nipple and the intermediate connection member are joined by inserting the annular collars into both ends of the intermediate connection member.

Abstract: A storage medium readable by a computer for storing a circuit module's interface information, a connection-verifying method for determining whether or not a first circuit module can be connected to a second circuit module and a presentation method for a circuit module's interface information, utilize the interface information comprising high-level combinations, each combination including first identifier sets and second identifier sets, wherein each of the first identifier sets is a combination pattern of values of signals, each signal appearing at a predetermined time at one of ports pertaining to a first port set of the circuit module, and wherein each of the second identifier sets is a combination pattern of values of signals, each signal appearing at a predetermined time at one of ports pertaining to a second port set of the circuit module.

Abstract: A guidance system for protecting a specific zone as a safety zone against flood water while protecting landscapes near the specific zone from deteriorization. According to the described flood water guidance system, a guidance plate (5, 5, . . . ) is positioned under underground in the vicinity (S′1, S′2, S″1) of an upstream side of a specific zone (SI, S2) containing property to be protected and where it is anticipated that flood water will flow, and when flood water is generated, or when there is a possibility that flood water may be generated, the guidance plate (5, 5, . . . ) is raised to a predetermined height above the surface of the earth, in order that a specific zone (S1, S2) is protected as a safety zone by diverting the flood water from the specific zone (S1, S2) by way of the raised guidance plate (5, 5, . . . ), and by guiding the flood water to a retarding basin, a drainage canal, and the like.

Abstract: Even if only logic circuits described in HDL are distributed over a network, if the logic synthesis ability is insufficient, the overall design capability cannot be enhanced; e.g., a sufficient performance of a gate level logic circuit cannot be attained, or it takes a long time to complete logic synthesis. Considering design skills for logic synthesis are considered as property, the invention enables distribution of design skills between a plurality of design sites over a network interconnecting computers. Charges for a design skill are set for the rates of improvement to the performance of the logic circuit that was refined by the design skill. Desired circuit performance can be attained in a shorter period by shortening the design phases in which an RTL logic circuit is supplied as input and by logic synthesis thereon, a gate level logic circuit is output.

Abstract: A semiconductor memory device comprises a first transistor including a source region, a drain region, a first channel region of a semiconductor material formed on an insulating film and connecting the source region and the drain region, and a gate electrode for controlling potential of the first channel region; a second transistor including a source region, a drain region, a second channel region of a semiconductor material connecting the source region and the drain region, a second gate electrode for controlling potential of the second channel region, and a charge storage region coupled with the second channel region by electrostatic capacity; wherein the source region of the second transistor is connected to a source line, one end of the source or the drain region of the first transistor is connected to the charge storage region of the second transistor, the other end of the source or the drain region of the first transistor is connected to a data line.

Abstract: Disclosed is an inexpensive money safe which is safe against fire and the like and which can easily be utilized when necessary. A basement (10) for accommodating a movable money safe (1) is accommodated in the basement (10), and upper surface of the movable money safe (1) is covered with a fireproof lid (15) which is the same color as that of the floor (12), and if the movable money safe (1) is driven into the room interior (11) for utilizing the movable cylinder unit (20) which is operated with water pressure of running water to drive the movable money safe (1) into the room interior (11).