Abstract: The organic insulating film has an opening through which the drain electrode is partially exposed. The opening has a side wall extending from above the drain electrode. The pixel electrode has a contact portion that is in contact with the drain electrode in the opening of the organic insulating film, a wiring portion that extends directly on the side wall of the organic insulating film from the contact portion, and a body portion that is linked to the wiring portion and is located on the organic insulating film. The interlayer insulating film covers the pixel electrode. The interlayer insulating film covers the source electrode and directly covers the semiconductor film between the source-electrode side surface and the drain-electrode side surface. The common electrode has fringes opposed to the pixel electrode via the interlayer insulating film.

Abstract: A liquid crystal display panel includes a thin film transistor disposed on an insulating substrate in a display region, an external wiring for connecting the thin film transistor to a terminal electrode, and a planarized film disposed on the thin film transistor, and having a planarized upper surface. The planarized film is not disposed, or a planarized film having a smaller film thickness than that of the planarized film in the display region is disposed, above the external wiring in a frame region.

Abstract: A liquid crystal display panel includes: a transparent insulating substrate; a signal line and a scanning line arranged in a display region on the transparent insulating substrate and crossing each other in a matrix; a protective insulating film arranged so as to cover at least the signal line and the scanning line from above; a first insulating film that covers the protective insulating film from above; and a first contact hole that penetrates at least the first insulating film and the protective insulating film to reach a surface of a common interconnect. The first contact hole has a bottom and an inner side surface covered with a first stacked film composed of a first transparent conductive film made of the same material as the lower electrode and a second transparent conductive film made of the same material as the upper electrode.

Abstract: A liquid crystal display includes: first and second transparent substrates located such that inner main surfaces face each other with a gap being provided therebetween and a liquid crystal layer is held between the substrates; a parallax barrier provided on an outer main surface of the first transparent substrate and optically separating pixels displaying an image into pixels visually recognized in a specific direction and pixels visually recognized in another specific direction; and a plurality of switching elements, arrayed on the inner main surface of the second transparent substrate, for applying voltage to drive the liquid crystal; wherein the parallax barrier includes a plurality of transmissive portions arrayed to transmit light and a plurality of light blocking portions provided respectively around the transmissive portions to block light, and each of the light blocking portions includes two or more layered light blocking films.

Abstract: A method of manufacturing a display apparatus having a display material provided between a pair of substrates arranged to face each other, the method comprises: bonding a first mother substrate and a second mother substrate to form a cell substrate from which one or more panels are bring out; thinning one of the first mother substrate and the second mother substrate after forming the cell substrate; forming a parallax barrier layer that separates a display image and a light transmission layer to be stacked on the parallax barrier layer on a surface of the one of the first mother substrate and the second mother substrate at an outer-side face of the cell substrate; and dividing the cell substrate into one or more panels.

Abstract: A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

Abstract: An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.

Abstract: An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.

Abstract: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength ?, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (?/n)×0.95 to (?/n)×1.

Abstract: Provided is a thin film transistor that includes a gate electrode formed in one major plane of a substrate, a gate insulating film covering the gate electrode, a semiconductor film formed opposite to the gate electrode with the gate insulating film interposed and including a first amorphous region to serve as a source region, a second amorphous region to serve as a drain region, and a crystalline region to serve as a channel region disposed between the first amorphous region and the second amorphous region, and a source electrode and a drain electrode formed above the semiconductor film without direct contact with the crystalline region and electrically connected to the source region and the drain region, respectively.

Abstract: A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

Abstract: A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.

Abstract: A halftone mask includes translucent film patterns for forming a middle gradation area and light blocking film patterns disposed to an entire periphery of the translucent film patterns.

Abstract: In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

Abstract: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength ?, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (?/n)×0.95 to (?/n)×1.

Abstract: A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

Abstract: In forming a TFT and a storage capacitance element, whereas sharing with each other the conductive film and the insulation film, which are components of the TFT and the storage capacitance element, contributes to improving production efficiency, it is difficult to obtain a storage capacitance element that is optimized independently of the TFT. A TFT substrate provided with a TFT and a storage-capacitance element according to the present invention is characterized in that the storage-capacitance element is obtained that includes an electrically conductive film and an insulation film each being different from those used in the TFT. Furthermore, in order to form such a structure, a method of manufacturing the TFT substrate is provided that achieves both flexibility in design and efficiency in production without need for addition of any photolithography processes.

Abstract: A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.

Abstract: In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

Abstract: A halftone mask includes translucent film patterns for forming a middle gradation area and light blocking film patterns disposed to an entire periphery of the translucent film patterns.