Abstract: A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.

Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.