Abstract: A voltage sensing device includes: a multiplexer configured to choose either two corresponding voltages at two voltage sensing target nodes or two corresponding voltages at the terminals of a shunt resistor, and output either the two corresponding voltages at the two voltage sensing target nodes or the two corresponding voltages at the terminals of the shunt resistor, which are chosen by the multiplexer, as a first output voltage and a second output voltage; a differential switched capacitor amplifier circuit including a sampling capacitor and a feedback capacitor and configured to sample the first output voltage and the second output voltage through the sampling capacitor, and output sensing voltages corresponding to the first output voltage and the second output voltage by transferring a charge stored in the sampling capacitor through the feedback capacitor; and an operation control unit configured to control the multiplexer and the differential switched capacitor amplifier circuit.

Abstract: A voltage detection device comprises a voltage detection circuit, which is a fully-differential type and a control circuit for controlling an operation of the voltage detection circuit. The voltage detection circuit includes a switched capacitor circuit, a differential amplifier, a common mode feedback circuit for controlling a common mode level of an output voltage of the differential amplifier and a bias circuit for supplying biases to the differential amplifier and the common mode feedback circuit. The control circuit controls the voltage detection circuit to execute intermittently a detection operation for detecting the voltage. The control circuit controls the voltage detection circuit to execute a pseudo operation of an execution period, which is shorter than that of the detection operation, during a transition period from a stop state, in which no detection operation is executed, to the operation state, in which the detection operation is executed.

Abstract: A route switching circuit includes: a pair of normal detection routes that output voltages of a positive side connection point and a negative side connection point, which are different from each other, in multiple batteries for constituting an assembled battery; and a pair of diagnosis detection routes that output the voltages of the positive side connection point and the negative side connection point, and confirm a connection state of the normal detection routes by using the normal detection routes, which output at least one of a voltage of a positive side battery connected to a positive side from the positive side connection point and a voltage of a negative side battery connected to a negative side from the negative side connection point.

Abstract: There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal.

Abstract: A voltage detection circuit includes two detection capacitors, which are paired and configured differentially, first to third detection switches, a drive part, a minimum selector and a maximum selector. The first detection switch is formed of a pMOS transistor, which opens and closes a path between one of the detection capacitors and an input node. The second detection switch is formed of an nMOS transistor, which opens and closes a path between the other of the detection capacitors and an input node. The third detection switch is formed of a series circuit of a pMOS transistor and an nMOS transistor, which open and close a path between two detection capacitors. The driving part turns on and off complementarily between the first and second switches and the third detection switch. The minimum selector applies a lower one of voltages of the input nodes as a substrate potential of the nMOS transistor.

Abstract: A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

Abstract: A voltage sensing device includes: a multiplexer configured to choose either two corresponding voltages at two voltage sensing target nodes or two corresponding voltages at the terminals of a shunt resistor, and output either the two corresponding voltages at the two voltage sensing target nodes or the two corresponding voltages at the terminals of the shunt resistor, which are chosen by the multiplexer, as a first output voltage and a second output voltage; a differential switched capacitor amplifier circuit including a sampling capacitor and a feedback capacitor and configured to sample the first output voltage and the second output voltage through the sampling capacitor, and output sensing voltages corresponding to the first output voltage and the second output voltage by transferring a charge stored in the sampling capacitor through the feedback capacitor; and an operation control unit configured to control the multiplexer and the differential switched capacitor amplifier circuit.

Abstract: An A/D conversion device acquires an inter-terminal signal of one or more battery cells when detecting a voltage across the battery cells. The A/D conversion device acquires a failure diagnosis signal during a failure diagnosis. A control unit causes the A/D conversion device to perform A/D conversion processing in a ?? mode or a hybrid mode, in which acquiring remaining bits of higher bits after subjecting the higher bits to a ?? type A/D conversion processing, when detecting the inter-terminal signal of the battery cells. The control unit causes the A/D conversion device to perform the A/D conversion processing in a cyclic mode or a hybrid mode, when detecting the failure diagnosis signal during the failure diagnosis.

Abstract: Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Abstract: A voltage detecting device detects a differential voltage between two input nodes having a non-zero common mode voltage. A differential voltage detecting circuit 5 detects the differential voltage by sampling each voltage of the input nodes and outputs a detection voltage indicating a detection result. A leak canceling circuit generates a compensating current, which flows in opposition to a leak current flowing out from the input nodes in correspondence to an operation of the differential voltage detecting circuit. An operation control part controls the leak canceling circuit to perform or stop a canceling operation. A failure diagnosing part performs a failure diagnosis about the leak canceling circuit based on a first detection value and a second detection value of the detection voltages, which are detected during periods when the leak canceling circuit performs and stops the canceling operation.

Abstract: A voltage detection circuit includes two detection capacitors, which are paired and configured differentially, first to third detection switches, a drive part, a minimum selector and a maximum selector. The first detection switch is formed of a pMOS transistor, which opens and closes a path between one of the detection capacitors and an input node. The second detection switch is formed of an nMOS transistor, which opens and closes a path between the other of the detection capacitors and an input node. The third detection switch is formed of a series circuit of a pMOS transistor and an nMOS transistor, which open and close a path between two detection capacitors. The driving part turns on and off complementarily between the first and second switches and the third detection switch. The minimum selector applies a lower one of voltages of the input nodes as a substrate potential of the nMOS transistor.

Abstract: A voltage sensing circuit includes a difference voltage sensing circuit and a leakage cancelling circuit. The difference voltage sensing circuit includes two sensing capacitors, a first sensing switch, a second sensing switch, and a third sensing switch. A first group including the first sensing switch and the second sensing switch and a second group including the third sensing switch are complementally turned on and turned off. The leakage cancelling circuit includes two compensation capacitors, a first compensation switch, a second compensation switch, and a third compensation switch. A third group including the first compensation switch and the second compensation switch and a fourth group including the third compensation switch are complementally turned on and turned off.

Abstract: A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

Abstract: A voltage detecting device detects a differential voltage between two input nodes having a non-zero common mode voltage. A differential voltage detecting circuit 5 detects the differential voltage by sampling each voltage of the input nodes and outputs a detection voltage indicating a detection result. A leak canceling circuit generates a compensating current, which flows in opposition to a leak current flowing out from the input nodes in correspondence to an operation of the differential voltage detecting circuit. An operation control part controls the leak canceling circuit to perform or stop a canceling operation. A failure diagnosing part performs a failure diagnosis about the leak canceling circuit based on a first detection value and a second detection value of the detection voltages, which are detected during periods when the leak canceling circuit performs and stops the canceling operation.

Abstract: An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract: An A/D conversion device acquires an inter-terminal signal of one or more battery cells when detecting a voltage across the battery cells. The A/D conversion device acquires a failure diagnosis signal during a failure diagnosis. A control unit causes the A/D conversion device to perform A/D conversion processing in a ?? mode or a hybrid mode, in which acquiring remaining bits of higher bits after subjecting the higher bits to a ?? type A/D conversion processing, when detecting the inter-terminal signal of the battery cells. The control unit causes the A/D conversion device to perform the A/D conversion processing in a cyclic mode or a hybrid mode, when detecting the failure diagnosis signal during the failure diagnosis.

Abstract: A voltage sensing circuit includes a difference voltage sensing circuit and a leakage cancelling circuit. The difference voltage sensing circuit includes two sensing capacitors, a first sensing switch, a second sensing switch, and a third sensing switch. A first group including the first sensing switch and the second sensing switch and a second group including the third sensing switch are complementally turned on and turned off. The leakage cancelling circuit includes two compensation capacitors, a first compensation switch, a second compensation switch, and a third compensation switch. A third group including the first compensation switch and the second compensation switch and a fourth group including the third compensation switch are complementally turned on and turned off.

Abstract: A first part circuit and an operational amplifier form a level shift circuit, which selects either one of battery cells forming an assembled battery and extracts and holds a voltage representing an inter-terminal voltage of a selected battery cell. A second part circuit and the operational amplifier form a residual voltage generation circuit, which generates a residual voltage by amplifying a differential voltage between a conversion subject voltage and an analog voltage corresponding to a conversion result of an A/D conversion circuit and applies the residual voltage to the A/D conversion circuit as a conversion subject voltage. A switchover circuit operates the operational amplifier as either one of the level shift circuit and the residual voltage generation circuit and switches over a connection-state to apply a voltage held by the level shift circuit to the A/D conversion circuit and the residual voltage generation circuit as a conversion subject voltage.

Abstract: In a voltage detecting device, a control unit turns on first switches and fifth switches corresponding to a plurality of unit batteries of an assembled battery to charge electric charge to first capacitors. The control unit simultaneously turns off at least one of the first switches or the fifth switches to hold the electric charge in the first capacitors. While selecting one of the unit batteries in a predetermined order as a target unit battery for voltage detection, the control unit temporarily turns off a fourth switch to reset electric charge of a second capacitor, and then turns of second switches and third switches in a state where one of the first switches and one of the fifth switches corresponding to the target unit battery are kept in an off state, thereby to detect a voltage of the target unit battery.

Abstract: A thermosetting resin composition for an underfilling of a semiconductor comprising, as essential components, a thermosetting resin, a curing agent, a flux agent and two or more inorganic fillers with different mean particle sizes, wherein the inorganic fillers include an inorganic filler with a mean particle size of no greater than 100 nm and an inorganic filler with a mean particle size of greater than 100 nm.