Abstract: A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.

Abstract: An imaging device includes a pixel unit having a plurality of pixels forming a plurality of rows and a plurality of columns, and a readout unit that divides the pixel unit into a plurality of pixel blocks based on a division pattern, each pixel block including at least two pixels, and combines signals from the at least two pixels included in one pixel block to generate one signal for each of the pixel blocks. A detection unit detects a change in signal values between a plurality of signals sequentially generated by the readout unit of the one pixel block. A control unit controls the readout unit to output a signal individually from each of the pixels included in at least one pixel block in response to detecting a change in the signal values, and controls the readout unit so that the division patterns are different in at least two frames.

Abstract: A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Abstract: An imaging device as an embodiment includes: a pixel unit having a plurality of pixels arranged to form a plurality of rows and a plurality of columns; a readout unit that divides the pixel unit into a plurality of pixel blocks in accordance with a division pattern, each pixel block including at least two of the plurality of pixels, and combines signals from the at least two of the plurality of pixels included in one pixel block of the plurality of pixel blocks to generate one signal for each of the plurality of pixel blocks; a detection unit that detects that a change in signal values between a plurality of signals that are sequentially generated by the readout unit of the one pixel block; and a control unit that controls the readout unit.

Abstract: A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A capacitive micromachined ultrasonic transducer having a wide reception band is provided. The capacitive micromachined ultrasonic transducer includes an element including a first sub-element and a second sub-element each including a cell. The cell includes a vibrating membrane that includes one of two electrodes formed with a spacing therebetween and that is vibratably supported. The capacitive micromachined ultrasonic transducer further includes a first detection circuit, a second detection circuit, and a combining circuit that combines a signal from the first detection circuit and a signal from the second detection circuit. The first sub-element is electrically connected to the first detection circuit, and the second sub-element is electrically connected to the second detection circuit. The first detection circuit and the second detection circuit have different cut-off frequencies.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.

Abstract: A method of producing an electromechanical transducer includes forming an insulating film on a first electrode, forming a sacrificial layer on the insulating film, forming a first membrane on the sacrificial layer, forming a second electrode on the first membrane, forming an etching-hole in the first membrane and removing the sacrificial layer through the etching-hole, and forming a second membrane on the second electrode, and sealing the etching-hole. Forming the second membrane and sealing the etching-hole are performed in one operation.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: An electrostatic capacitance type transducer includes one or more elements 2. The one or more elements each include a plurality of cell groups 14 each including a cell 1 including a first electrode 4 and a second electrode 5 arranged with a gap therebetween, the second electrode being electrically connected to a shared signal extraction electrode 15. In the cell group, each of the cells has an equal wiring length from the shared signal extraction electrode 15. The electrostatic capacitance of the plurality of cell groups, the wiring resistance between two adjacent cell groups, the number of cell groups in the element, and the central frequency of the element satisfy a predetermined relationship to increase transmission efficiency or reception sensitivity.

Abstract: A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.

Abstract: Provided is a capacitive transducer including an element including a plurality of cells supported such that a vibrating membrane including one of a pair of electrodes formed with an gap inbetween is capable of vibration, wherein a distance between a pair of electrodes of a cell in an end portion of the element is greater than that between a pair of electrodes of a cell in a middle portion of the element.

Abstract: A probe is provided in which penetration of an acoustic medium into a support layer of an optical reflection member through a pinhole or a scratch on an optical reflection layer is suppressed, occurrence of a solvent crack is suppressed, and noise due to photoacoustic waves that occurs on a receiving surface can be suppressed. The probe includes an element having at least one cell in which a vibration film containing one electrode out of two electrodes that are provided so as to interpose a space therebetween is vibratably supported. The probe further includes a support layer disposed on the vibration film, and an optical reflection layer disposed on the support layer. A protection layer against an acoustic medium is formed on the optical reflection layer.