Patents by Inventor Kazuumi INUBUSHI
Kazuumi INUBUSHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220238136Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.Type: ApplicationFiled: April 6, 2022Publication date: July 28, 2022Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 11335365Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.Type: GrantFiled: August 4, 2020Date of Patent: May 17, 2022Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Publication number: 20220013140Abstract: A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and be in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.Type: ApplicationFiled: June 23, 2021Publication date: January 13, 2022Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20220006007Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 11158785Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: GrantFiled: December 22, 2020Date of Patent: October 26, 2021Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Publication number: 20210286028Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.Type: ApplicationFiled: February 2, 2021Publication date: September 16, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210265562Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.Type: ApplicationFiled: December 9, 2020Publication date: August 26, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210193913Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210184103Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.Type: ApplicationFiled: December 8, 2020Publication date: June 17, 2021Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
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Publication number: 20210165058Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni?1Al?2X?3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<?<0.5 in a case of ?=?3/(?1+?2+?3)].Type: ApplicationFiled: January 14, 2021Publication date: June 3, 2021Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 10971679Abstract: A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, Ag?X1-???(1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<?<1.Type: GrantFiled: December 19, 2019Date of Patent: April 6, 2021Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 10964341Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<y<1.Type: GrantFiled: August 21, 2020Date of Patent: March 30, 2021Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 10937451Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. Al?X1-???(1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and ? is 0.5<?<1.Type: GrantFiled: March 13, 2020Date of Patent: March 2, 2021Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 10937954Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): Ag?X1-? where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<?<1.Type: GrantFiled: November 7, 2019Date of Patent: March 2, 2021Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 10937951Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.Type: GrantFiled: March 5, 2018Date of Patent: March 2, 2021Assignee: TDK CORPORATIONInventors: Katsuyuki Nakada, Kazuumi Inubushi
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Patent number: 10921392Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni?1Al?2X?3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<?<0.5 in a case of ?=?3/(?1+?2+?3)].Type: GrantFiled: September 21, 2018Date of Patent: February 16, 2021Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada
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Publication number: 20210043682Abstract: Provided are magnetoresistance effect element and a Heusler alloy in which an amount of energy required to rotate magnetization can be reduced. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Mn, Cr, Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is an element different from the Z element and has a smaller magnetic moment than Co.Type: ApplicationFiled: August 6, 2020Publication date: February 11, 2021Applicant: TDK CORPORATIONInventors: Katsuyuki NAKADA, Kazuumi INUBUSHI
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Publication number: 20210043226Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.Type: ApplicationFiled: August 4, 2020Publication date: February 11, 2021Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210043225Abstract: To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product). The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5<?<1.9).Type: ApplicationFiled: August 4, 2020Publication date: February 11, 2021Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Tetsuya UEMURA
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Publication number: 20200388302Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<y<1.Type: ApplicationFiled: August 21, 2020Publication date: December 10, 2020Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA