Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<?<1.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7?x?1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.

Abstract: A laminate includes, on a substrate, a first buffer layer substantially made of zirconium oxide or stabilized zirconia, a second buffer layer substantially made of yttrium oxide, a metal layer substantially made of at least one among platinum, iridium, palladium, rhodium, vanadium, chromium, iron, molybdenum, tungsten, aluminum, silver, gold, copper, and nickel, and a magnesium oxide layer substantially made of magnesium oxide, in this order.

Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7?x?1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7?x?1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.