Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure.

Abstract: A temperature control device controls the temperature of a controlled object by circulating a fluid in a temperature adjustment unit arranged near the controlled object. The temperature control device comprises a heating pathway that heats and circulates the fluid in the temperature adjustment unit, a cooling pathway that cools and circulates the fluid in the temperature adjustment unit, a bypass pathway that does not pass the fluid through the heating pathway and cooling pathway, but circulates the fluid in the temperature adjustment unit, and adjustment means that adjust a flow ratio of the fluid that is supplied from the heating pathway, cooling pathway, and bypass pathway to the temperature adjustment unit via a confluence unit that combines these flows. The adjustment means are provided on a downstream side of each of the heating pathway, the cooling pathway, and the bypass pathway and on the upstream side of the confluence unit.

Abstract: A substrate processing apparatus capable of rapidly raising and lowering the processing temperature of a substrate. The substrate processing apparatus has a mounting stage adapted to be mounted with a substrate and to control the processing temperature of the mounted substrate. The mounting stage comprises a temperature control device disposed in a mounting surface of the mounting stage for mounting the substrate thereon, a coolant inflow chamber into which a coolant is flowed, and a heat transmission/insulation switch-over chamber disposed between the temperature control device and the coolant inflow chamber so that a heat-transmitting gas is flowed into and vacuum-exhausted from the heat transmission/insulation switch-over chamber. The temperature control device has therein a gas inflow chamber into which a hot gas is flowed.

Abstract: A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.

Abstract: A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

Abstract: Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

Abstract: A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.

Abstract: Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.

Abstract: A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.

Abstract: A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.