Abstract: A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.

Abstract: A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are placed on the electrodes. High frequency voltage is applied between the paired parallel electrodes to generate electric field of high frequency, perpendicular to the process face of the wafer, in the processing chamber. Etching gas is introduced into the processing chamber and made plasma in it. An electron supply chamber provided with an electron generating filament therein is connected to the processing chamber. Electrons generated in the electron supply chamber are induced into the processing chamber by induction magnetic field and help the etching gas be made plasma.