Patents by Inventor Kazuya Sawada
Kazuya Sawada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220093847Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a silicon oxide on the first conductor; a second conductor; a first layer stack on the second conductor. The silicon oxide includes a dopant and has a first part on the first conductor and a second part adjacent to the first part on the first conductor. The second part is higher than the first part. A concentration of the dopant of the second part being higher than a concentration of the dopant of the first part. The second conductor is on the second part of the silicon oxide. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.Type: ApplicationFiled: September 10, 2021Publication date: March 24, 2022Applicant: Kioxia CorporationInventors: Takao OCHIAI, Kenichi YOSHINO, Kazuya SAWADA, Naoki AKIYAMA
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Publication number: 20220093848Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer and a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer, first, second and third nonmagnetic layers. The firs nonmagnetic layer is between the first and second magnetic layers, the second magnetic layer is between the first nonmagnetic layer and the third magnetic layer, the third magnetic layer is between the second magnetic layer and the second nonmagnetic layer, the third nonmagnetic layer is between the second and the third magnetic layers, the third magnetic layer contains Co and Pt, and the second nonmagnetic layer contains at least one of Mo and W.Type: ApplicationFiled: September 10, 2021Publication date: March 24, 2022Applicant: Kioxia CorporationInventors: Eiji KITAGAWA, Youngmin EEH, Tadaaki OIKAWA, Kazuya SAWADA, Taiga ISODA
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Publication number: 20220085279Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer between the second ferromagnetic layer and the third ferromagnetic layer. The second ferromagnetic layer is between the first ferromagnetic layer and the third ferromagnetic layer. The first non-magnetic layer contains an oxide containing magnesium (Mg). The third ferromagnetic layer contains silicon (Si) or germanium (Ge).Type: ApplicationFiled: September 10, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Kazuya SAWADA, Young Min EEH, Tadaaki OIKAWA, Eiji KITAGAWA, Taiga ISODA
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Patent number: 11217288Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.Type: GrantFiled: September 10, 2019Date of Patent: January 4, 2022Assignee: TOSHIBA MEMORY CORPORATIONInventors: Kazuya Sawada, Young Min Eeh, Tadaaki Oikawa, Kenichi Yoshino, Eiji Kitagawa, Taiga Isoda
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Patent number: 11201189Abstract: A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.Type: GrantFiled: September 9, 2018Date of Patent: December 14, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Youngmin Eeh, Toshihiko Nagase, Daisuke Watanabe, Kazuya Sawada, Kenichi Yoshino, Tadaaki Oikawa, Hiroyuki Ohtori
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Patent number: 11127445Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.Type: GrantFiled: March 13, 2019Date of Patent: September 21, 2021Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.Inventors: Young Min Eeh, Taeyoung Lee, Kazuya Sawada, Eiji Kitagawa, Taiga Isoda, Tadaaki Oikawa, Kenichi Yoshino
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Publication number: 20210288240Abstract: A magnetic memory device includes a magnetoresistance effect element including a first, second, and third ferromagnetic layer, a first non-magnetic layer between the first and second ferromagnetic layer, and a second non-magnetic layer between the second and third ferromagnetic layer. The second ferromagnetic layer is between the first and third ferromagnetic layer. The third ferromagnetic layer includes a fourth ferromagnetic layer in contact with the second non-magnetic layer, a third non-magnetic layer, and a fourth non-magnetic layer between the fourth ferromagnetic layer and the third non-magnetic layer. The first non-magnetic layer includes an oxide including magnesium (Mg). A melting point of the fourth non-magnetic layer is higher than the third non-magnetic layer.Type: ApplicationFiled: September 9, 2020Publication date: September 16, 2021Applicant: Kioxia CorporationInventors: Kazuya SAWADA, Young Min EEH, Tadaaki OIKAWA, Eiji KITAGAWA, Taiga ISODA
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Publication number: 20210287728Abstract: According to one embodiment, a memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a capping layer on an upper surface of the second ferromagnetic layer; and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode including one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.Type: ApplicationFiled: September 9, 2020Publication date: September 16, 2021Applicants: Kioxia Corporation, SK hynix Inc.Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Jin Won JUNG
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Publication number: 20210183559Abstract: The present invention improves cooling efficiency of a conductive member, which is formed by bundling a plurality of wires and to which electric current is led from a current introduction terminal. A current introduction terminal structure 10, in which electric current is led from a current introduction terminal 12 to a conductive member 13 formed by bundling a plurality of wires 34, is configured in such a manner that the conductive member 13 and the current introduction terminal 12 electrically connected to this conductive member 13 are disposed in a casing 14 for storing cooling water W and are immersed in the cooling water W.Type: ApplicationFiled: March 1, 2021Publication date: June 17, 2021Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Kazuya SAWADA, Kunihiko KINUGASA, Tomofumi ORIKASA, Takayuki KOBAYASHI
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Publication number: 20210083170Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.Type: ApplicationFiled: March 12, 2020Publication date: March 18, 2021Applicant: KIOXIA CORPORATIONInventors: Kazuya SAWADA, Young Min EEH, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
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Publication number: 20210074908Abstract: According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.Type: ApplicationFiled: March 12, 2020Publication date: March 11, 2021Applicant: KIOXIA CORPORATIONInventors: Tadaaki OIKAWA, Young Min EEH, Kenichi YOSHINO, Eiji KITAGAWA, Kazuya SAWADA, Taiga ISODA
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Publication number: 20210074911Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.Type: ApplicationFiled: March 10, 2020Publication date: March 11, 2021Applicants: KIOXIA CORPORATION, SK HYNIX INC.Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Kenichi YOSHINO, Jong Koo LIM, Ku Youl JUNG, Guk Cheon KIM
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Patent number: 10910032Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.Type: GrantFiled: May 1, 2019Date of Patent: February 2, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Tatsuya Kishi, Tsuneo Inaba, Daisuke Watanabe, Masahiko Nakayama, Nobuyuki Ogata, Masaru Toko, Hisanori Aikawa, Jyunichi Ozeki, Toshihiko Nagase, Young Min Eeh, Kazuya Sawada
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Patent number: 10873021Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.Type: GrantFiled: September 6, 2018Date of Patent: December 22, 2020Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.Inventors: Young Min Eeh, Daisuke Watanabe, Jae-Hyoung Lee, Toshihiko Nagase, Kazuya Sawada, Tadaaki Oikawa, Kenichi Yoshino, Taiga Isoda
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Patent number: 10840434Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.Type: GrantFiled: March 13, 2019Date of Patent: November 17, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kenichi Yoshino, Kazuya Sawada, Taiga Isoda
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Publication number: 20200302987Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.Type: ApplicationFiled: September 10, 2019Publication date: September 24, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Kazuya SAWADA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
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Publication number: 20200294567Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.Type: ApplicationFiled: September 11, 2019Publication date: September 17, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Tadaaki OIKAWA, Young Min EEH, Kazuya SAWADA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
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Publication number: 20200091410Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.Type: ApplicationFiled: March 13, 2019Publication date: March 19, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Kazuya SAWADA, Taiga ISODA
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Publication number: 20200082857Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.Type: ApplicationFiled: March 13, 2019Publication date: March 12, 2020Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.Inventors: Young Min EEH, Taeyoung LEE, Kazuya SAWADA, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
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Patent number: 10586917Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.Type: GrantFiled: November 28, 2018Date of Patent: March 10, 2020Assignees: SK hynix Inc., TOSHIBA MEMORY CORPORATIONInventors: Jong-Koo Lim, Won-Joon Choi, Guk-Cheon Kim, Yang-Kon Kim, Ku-Youl Jung, Toshihiko Nagase, Youngmin Eeh, Daisuke Watanabe, Kazuya Sawada, Makoto Nagamine