Abstract: A heat pipe includes a tubular member that is a hollow member in which liquid is encapsulated and of which an inner surface is subjected to an oxidation treatment in advance and a movement section that moves the liquid encapsulated and liquefied in the tubular member along a longitudinal direction of the tubular member by means of a capillary phenomenon and of which a surface is subjected to an oxidation treatment in advance.

Abstract: A fixing device includes a belt member that cyclically moves, a pressing unit that comes into contact with the belt member and presses a recording medium moving between the belt member and the pressing unit, and a heat source that includes a base material, a resistance heating element disposed on a surface of the base material along a longitudinal direction of the base material, and an insulator covering the resistance heating element and that comes into contact with the pressing unit via the belt member to heat an inner surface of the belt member, in which the insulator is formed to cover a corner portion of the base material in a direction of movement of the belt member.

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1); 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2); and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05?Al/(In+Ga+Sn+Al)?0.30 . . . (4).

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 ?m to 0.5 ?m.

Abstract: An auxiliary wheel mechanism 151 of a two-wheeled vehicle disclosed herein includes an auxiliary wheel 1, a saddle support member 7, a transmission member 9, and an auxiliary wheel urging member 23. The auxiliary wheel 1 is supported by a vehicle body 11 to be located on a side of a rear wheel 13 and to be movable between a retracted position retracted from a road surface 17 and an operative position where the vehicle body 11 is supported against the road surface 17 so as not to tilt. The saddle support member 7 is provided on the vehicle body 11 and supports a saddle 27 such that the saddle 27 is movable backward and forward. The transmission member 9 transmits a backward and forward movement of the saddle 27 to the auxiliary wheel 1 such that the auxiliary wheel 1 is located at the retracted position when the saddle 27 is located at a front position, and the auxiliary wheel 1 is located at the operative position when the saddle 27 is located at a rear position.

Abstract: A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2?) range defined by (A) to (F) below as measured by X-ray (Cu-K ? ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Abstract: An auxiliary wheel mechanism 151 of a two-wheeled vehicle disclosed herein includes an auxiliary wheel 1, a saddle support member 7, a transmission member 9, and an auxiliary wheel urging member 23. The auxiliary wheel 1 is supported by a vehicle body 11 to be located on a side of a rear wheel 13 and to be movable between a retracted position retracted from a road surface 17 and an operative position where the vehicle body 11 is supported against the road surface 17 so as not to tilt. The saddle support member 7 is provided on the vehicle body 11 and supports a saddle 27 such that the saddle 27 is movable backward and forward. The transmission member 9 transmits a backward and forward movement of the saddle 27 to the auxiliary wheel 1 such that the auxiliary wheel 1 is located at the retracted position when the saddle 27 is located at a front position, and the auxiliary wheel 1 is located at the operative position when the saddle 27 is located at a rear position.

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1), 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2), and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03?X/(In+Ga+Sn+X)?0.25 . . . (4).

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement. (InxGayAlz)2O3??(2) In the formula (2), 0.47?x?0.53, 0.17?y?0.43, 0.07?z?0.33, and x+y+z=1. 31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: The problem is solved by an information processing system including: a standard data acquirer that acquires registered standard data on work; a work data acquirer that acquires work data on a worker performing the work; a determiner that determines whether or not a difference between the standard data acquired by the standard data acquirer and the work data acquired by the work data acquirer is a threshold value or more; a generator that generates an instruction image regarding correction of the work according to the difference when the difference is determined to be the threshold value or more by the determiner; and a displayer that displays the instruction image generated by the generator on a display unit of a display device worn by the worker to display the instruction image superimposed on a real space.

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.