Patents by Inventor Kazuyoshi Inoue

Kazuyoshi Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190218145
    Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.
    Type: Application
    Filed: June 16, 2017
    Publication date: July 18, 2019
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Shigekazu TOMAI, Masatoshi SHIBATA, Motohiro TAKESHIMA
  • Publication number: 20190177176
    Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).
    Type: Application
    Filed: August 25, 2017
    Publication date: June 13, 2019
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Shigekazu TOMAI, Masatoshi SHIBATA
  • Patent number: 10311617
    Abstract: Included are: an acceptor configured to accept an operation result of success or failure of an operation by an operator, the operation result being obtained in a case where an optical see-through displayer worn by the operator displays a support image candidate for the operation by the operator superimposed on a reality space; a storing unit configured to store each support image candidate out of a plurality of the support image candidates for the operation and the operation result in a memory, associating the support image candidate with the operation result being in a case where the support image is displayed; and a selector configured to select the support image candidate to be set as the support image of the operation from among the plurality of the support image candidates, based on the operation result.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: June 4, 2019
    Assignee: NS SOLUTIONS CORPORATION
    Inventor: Kazuyoshi Inoue
  • Patent number: 10286269
    Abstract: An object of the present invention is to provide a grip for sporting goods containing an acrylonitrile-butadiene based rubber as a base rubber and having an excellent grip performance and sustainability of grip performance under a wet condition. The present invention provides a grip for sporting goods comprising an outermost surface layer formed from a surface layer rubber composition, wherein the surface layer rubber composition contains (A) a base rubber and (B) a resin having a softening point in a range from 5° C. to 120° C., (A) the base rubber contains an acrylonitrile-butadiene based rubber, and (B) the resin is at least one type selected from the group consisting of a hydrogenated rosin ester, a disproportionated rosin ester, an ethylene-vinyl acetate copolymer, a coumarone resin, a phenol resin, a xylene resin and a styrene resin.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: May 14, 2019
    Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: Hidetaka Inoue, Sho Goji, Kuniyasu Horiuchi, Kazuyoshi Shiga, Chiemi Mikura, Hitoshi Oyama, Toshiyuki Tarao, Hiroshi Hasegawa
  • Publication number: 20190043385
    Abstract: The problem is solved by an information processing system including: a standard data acquirer that acquires registered standard data on work; a work data acquirer that acquires work data on a worker performing the work; a determiner that determines whether or not a difference between the standard data acquired by the standard data acquirer and the work data acquired by the work data acquirer is a threshold value or more; a generator that generates an instruction image regarding correction of the work according to the difference when the difference is determined to be the threshold value or more by the determiner; and a displayer that displays the instruction image generated by the generator on a display unit of a display device worn by the worker to display the instruction image superimposed on a real space.
    Type: Application
    Filed: February 22, 2017
    Publication date: February 7, 2019
    Inventor: Kazuyoshi INOUE
  • Publication number: 20190041649
    Abstract: The problem is solved by a display system including: a teaching image acquirer that acquires a registered teaching image for work; a displayer that displays the teaching image for the work acquired by the teaching image acquirer on a display unit of a display device worn by a worker who performs the work to display the image for the work superimposed on a real space; a captured image acquirer that acquires a captured image regarding the work by the worker; and a generator that generates an instruction image, based on the captured image acquired by the captured image acquirer and on the teaching image for the work acquired by the teaching image acquirer, wherein the displayer displays the instruction image generated by the generator on the display unit to display the instruction image further superimposed on the real space.
    Type: Application
    Filed: February 22, 2017
    Publication date: February 7, 2019
    Inventor: Kazuyoshi INOUE
  • Publication number: 20190012819
    Abstract: Included are: an acceptor configured to accept an operation result of success or failure of an operation by an operator, the operation result being obtained in a case where an optical see-through displayer worn by the operator displays a support image candidate for the operation by the operator superimposed on a reality space; a storing unit configured to store each support image candidate out of a plurality of the support image candidates for the operation and the operation result in a memory, associating the support image candidate with the operation result being in a case where the support image is displayed; and a selector configured to select the support image candidate to be set as the support image of the operation from among the plurality of the support image candidates, based on the operation result.
    Type: Application
    Filed: June 16, 2016
    Publication date: January 10, 2019
    Inventor: Kazuyoshi INOUE
  • Publication number: 20180238810
    Abstract: A display system which has: a display device configured to be able to display an image superimposed on a reality space; and a managing device configured to manage the image the display device displays, wherein the display device has a display processor configured to read at least one of a qualified image and a disqualified image for an inspection target existing in the reality space from a memory and to display the read image superimposed on the reality space seen through an optical see-through displayer, on the displayer.
    Type: Application
    Filed: June 27, 2016
    Publication date: August 23, 2018
    Inventors: Kazuyoshi INOUE, Yoichiro SUMITO
  • Publication number: 20180219098
    Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.
    Type: Application
    Filed: July 29, 2016
    Publication date: August 2, 2018
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Futoshi UTSUNO, Yuki TSURUMA, Shigekazu TOMAI, Kazuaki EBATA
  • Publication number: 20160343554
    Abstract: An oxide sintered body comprising a bixbyite phase composed of In2O3 and an A3B5O12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).
    Type: Application
    Filed: December 18, 2014
    Publication date: November 24, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Kazuyoshi INOUE, Kazuaki EBATA, Masatoshi SHIBATA, Futoshi UTSUNO, Yuki TSURUMA, Yu ISHIHARA
  • Publication number: 20160201187
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Application
    Filed: March 21, 2016
    Publication date: July 14, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki YANO, Hirokazu KAWASHIMA, Kazuyoshi INOUE
  • Patent number: 9269573
    Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: February 23, 2016
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Kenji Goto, Hirokazu Kawashima
  • Patent number: 9249032
    Abstract: An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.
    Type: Grant
    Filed: April 23, 2008
    Date of Patent: February 2, 2016
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Katsunori Honda
  • Patent number: 9209257
    Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: December 8, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Koki Yano, Kota Terai
  • Patent number: 9202603
    Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: December 1, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka
  • Patent number: 9153438
    Abstract: An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: October 6, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano, Kazuyoshi Inoue
  • Patent number: 9136338
    Abstract: Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: September 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Patent number: 8981369
    Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 ??(1) In/(In+Ga)=0.59 to 0.99 ??(2) Zn/(Ga+Zn)=0.29 to 0.99 ??(3).
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: March 17, 2015
    Assignee: Idemitsu Kosan Co., Ltd
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • Patent number: 8957313
    Abstract: A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film, the transparent conductive thin film having a thickness of 35 nm or less.
    Type: Grant
    Filed: January 16, 2007
    Date of Patent: February 17, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Satoshi Umeno, Katsunori Honda, Kazuyoshi Inoue, Masato Matsubara
  • Patent number: 8920683
    Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: December 30, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Akira Kaijo, Satoshi Umeno