Patents by Inventor Kazuyoshi Inoue

Kazuyoshi Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120068130
    Abstract: A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 ?m or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.
    Type: Application
    Filed: November 23, 2011
    Publication date: March 22, 2012
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Shigeo Matsuzaki
  • Publication number: 20120009725
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
    Type: Application
    Filed: August 24, 2011
    Publication date: January 12, 2012
    Inventors: Kazuyoshi INOUE, Koki Yano, Nobuo Tanaka, Tokie Tanaka
  • Patent number: 8093800
    Abstract: A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: January 10, 2012
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Hisayuki Kawamura
  • Publication number: 20110315936
    Abstract: A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
    Type: Application
    Filed: February 28, 2008
    Publication date: December 29, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Masashi Kasami
  • Publication number: 20110310322
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Application
    Filed: August 29, 2011
    Publication date: December 22, 2011
    Inventors: Kazuyoshi INOUE, Shigekazu Tomai, Masato Matsubara
  • Publication number: 20110311828
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Application
    Filed: August 29, 2011
    Publication date: December 22, 2011
    Inventors: Kazuyoshi INOUE, Shigekazu TOMAI, Masato MATSUBARA
  • Patent number: 8062777
    Abstract: This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 ?cm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.
    Type: Grant
    Filed: August 7, 2006
    Date of Patent: November 22, 2011
    Assignee: Idemitsu Kosan, Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Publication number: 20110260118
    Abstract: An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
    Type: Application
    Filed: November 30, 2007
    Publication date: October 27, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Kazuyoshi Inoue
  • Publication number: 20110260157
    Abstract: A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.
    Type: Application
    Filed: May 1, 2008
    Publication date: October 27, 2011
    Inventors: Koki Yano, Kazuyoshi Inoue, Futoshi Utsuno, Masashi Kasami, Katsunori Honda
  • Patent number: 8038911
    Abstract: An oxide target including indium (In) and an element (A) selected from the following group A, wherein it contains an oxide shown by AInO3, Group A: lanthanum (La), neodymium (Nd), ytterbium (Yb), erbium (Er) and dysprosium (Dy).
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: October 18, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Patent number: 8038857
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: October 18, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masato Matsubara
  • Publication number: 20110240988
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Application
    Filed: August 26, 2009
    Publication date: October 6, 2011
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Publication number: 20110243835
    Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.
    Type: Application
    Filed: June 1, 2009
    Publication date: October 6, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Hirokazu Kawashima, Koki Yano, Shigekazu Tomai, Masashi Kasami, Kota Terai
  • Patent number: 8030195
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: October 4, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Patent number: 8017868
    Abstract: A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film wherein difference of internal stress between the transparent conductive thin film and the molybdenum metal thin film is 1600 MPa or less.
    Type: Grant
    Filed: January 15, 2007
    Date of Patent: September 13, 2011
    Assignee: Idemitsu Kosan, Co., Ltd.
    Inventors: Satoshi Umeno, Katsunori Honda, Kazuyoshi Inoue
  • Publication number: 20110198586
    Abstract: A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
    Type: Application
    Filed: October 19, 2009
    Publication date: August 18, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Masashi Kasami, Hirokazu Kawashima, Futoshi Utsuno
  • Patent number: 7998372
    Abstract: Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm?3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: August 16, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Publication number: 20110180763
    Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
    Type: Application
    Filed: September 14, 2009
    Publication date: July 28, 2011
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Koki Yano, Kota Terai
  • Publication number: 20110177696
    Abstract: Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
    Type: Application
    Filed: May 22, 2009
    Publication date: July 21, 2011
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Patent number: 7982215
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: July 19, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative