Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Abstract: A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2?) range defined by (A) to (F) below as measured by X-ray (Cu—K ? ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Abstract: A display system which has: a display device configured to be able to display an image superimposed on a reality space; and a managing device configured to manage the image the display device displays, wherein the display device has a display processor configured to read at least one of a qualified image and a disqualified image for an inspection target existing in the reality space from a memory and to display the read image superimposed on the reality space seen through an optical see-through displayer, on the displayer.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1), 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2), and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03?X/(In+Ga+Sn+X)?0.25 . . . (4).

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1); 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2); and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05?Al/(In+Ga+Sn+Al)?0.30 . . . (4).

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: Included are: an acceptor configured to accept an operation result of success or failure of an operation by an operator, the operation result being obtained in a case where an optical see-through displayer worn by the operator displays a support image candidate for the operation by the operator superimposed on a reality space; a storing unit configured to store each support image candidate out of a plurality of the support image candidates for the operation and the operation result in a memory, associating the support image candidate with the operation result being in a case where the support image is displayed; and a selector configured to select the support image candidate to be set as the support image of the operation from among the plurality of the support image candidates, based on the operation result.

Abstract: The problem is solved by a display system including: a teaching image acquirer that acquires a registered teaching image for work; a displayer that displays the teaching image for the work acquired by the teaching image acquirer on a display unit of a display device worn by a worker who performs the work to display the image for the work superimposed on a real space; a captured image acquirer that acquires a captured image regarding the work by the worker; and a generator that generates an instruction image, based on the captured image acquired by the captured image acquirer and on the teaching image for the work acquired by the teaching image acquirer, wherein the displayer displays the instruction image generated by the generator on the display unit to display the instruction image further superimposed on the real space.

Abstract: The problem is solved by an information processing system including: a standard data acquirer that acquires registered standard data on work; a work data acquirer that acquires work data on a worker performing the work; a determiner that determines whether or not a difference between the standard data acquired by the standard data acquirer and the work data acquired by the work data acquirer is a threshold value or more; a generator that generates an instruction image regarding correction of the work according to the difference when the difference is determined to be the threshold value or more by the determiner; and a displayer that displays the instruction image generated by the generator on a display unit of a display device worn by the worker to display the instruction image superimposed on a real space.

Abstract: Included are: an acceptor configured to accept an operation result of success or failure of an operation by an operator, the operation result being obtained in a case where an optical see-through displayer worn by the operator displays a support image candidate for the operation by the operator superimposed on a reality space; a storing unit configured to store each support image candidate out of a plurality of the support image candidates for the operation and the operation result in a memory, associating the support image candidate with the operation result being in a case where the support image is displayed; and a selector configured to select the support image candidate to be set as the support image of the operation from among the plurality of the support image candidates, based on the operation result.

Abstract: A display system which has: a display device configured to be able to display an image superimposed on a reality space; and a managing device configured to manage the image the display device displays, wherein the display device has a display processor configured to read at least one of a qualified image and a disqualified image for an inspection target existing in the reality space from a memory and to display the read image superimposed on the reality space seen through an optical see-through displayer, on the displayer.

Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Abstract: An oxide sintered body comprising a bixbyite phase composed of In2O3 and an A3B5O12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.