Patents by Inventor Kazuyoshi Inoue

Kazuyoshi Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TFT substrate and method for manufacturing TFT substrate
    Patent number: 8030195
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: October 4, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • Multilayer structure, electrode for electrical circuit using the same, and method for producing the same
    Patent number: 8017868
    Abstract: A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film wherein difference of internal stress between the transparent conductive thin film and the molybdenum metal thin film is 1600 MPa or less.
    Type: Grant
    Filed: January 15, 2007
    Date of Patent: September 13, 2011
    Assignee: Idemitsu Kosan, Co., Ltd.
    Inventors: Satoshi Umeno, Katsunori Honda, Kazuyoshi Inoue
  • THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
    Publication number: 20110198586
    Abstract: A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
    Type: Application
    Filed: October 19, 2009
    Publication date: August 18, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Masashi Kasami, Hirokazu Kawashima, Futoshi Utsuno
  • Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
    Patent number: 7998372
    Abstract: Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm?3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: August 16, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative
  • OXIDE SINTERED BODY AND SPUTTERING TARGET
    Publication number: 20110180763
    Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
    Type: Application
    Filed: September 14, 2009
    Publication date: July 28, 2011
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Koki Yano, Kota Terai
  • SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    Publication number: 20110177696
    Abstract: Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
    Type: Application
    Filed: May 22, 2009
    Publication date: July 21, 2011
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • TFT substrate and method for manufacturing TFT substrate
    Patent number: 7982215
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: July 19, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka, legal representative
  • SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET
    Publication number: 20110168994
    Abstract: Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.
    Type: Application
    Filed: June 5, 2009
    Publication date: July 14, 2011
    Inventors: Hirokazu Kawashima, Koki Yano, Futoshi Utsuno, Kazuyoshi Inoue
  • SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE
    Publication number: 20110121244
    Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.
    Type: Application
    Filed: September 14, 2006
    Publication date: May 26, 2011
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka
  • Semiconductor thin film and method for manufacturing same, and thin film transistor
    Patent number: 7906777
    Abstract: The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10+17 cm?3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film 40.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: March 15, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative
  • FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20110049511
    Abstract: A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating film 105 therebetween.
    Type: Application
    Filed: January 16, 2009
    Publication date: March 3, 2011
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Shigekazu Tomai
  • THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE
    Publication number: 20110050733
    Abstract: To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device. In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017/cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.
    Type: Application
    Filed: February 6, 2008
    Publication date: March 3, 2011
    Applicant: IDEMITSU KOSAN CO., LTD
    Inventors: Koki Yano, Kazuyoshi Inoue, Futoshi Utsuno, Masashi Kasami
  • Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display
    Patent number: 7897067
    Abstract: A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75?[In]/([In]+[Zn])?0.95 (1) 1.0×10?4?[M]/([In]+[Zn]+[M])?1.0×10?2 (2) wherein [In][Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.
    Type: Grant
    Filed: April 19, 2004
    Date of Patent: March 1, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventor: Kazuyoshi Inoue
  • Transparent conductive film, and substrate, electronic device and liquid crystal display using the same
    Patent number: 7889298
    Abstract: A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: February 15, 2011
    Assignee: Idemitsu Kosan Co. Ltd.
    Inventors: Satoshi Umeno, Akira Kaijo, Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative
  • PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR
    Publication number: 20110006297
    Abstract: A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching.
    Type: Application
    Filed: November 14, 2008
    Publication date: January 13, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Futoshi Utsuno, Masashi Kasami, Shigekazu Tomai, Hirokazu Kawashima
  • ETCHING SOLUTION COMPOSITION
    Publication number: 20100320457
    Abstract: Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali.
    Type: Application
    Filed: November 21, 2008
    Publication date: December 23, 2010
    Inventors: Masahito Matsubara, Kazuyoshi Inoue, Koki Yano, Yuki Igarashi
  • FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE
    Publication number: 20100295042
    Abstract: A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.
    Type: Application
    Filed: January 22, 2009
    Publication date: November 25, 2010
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Hirokazu Kawashima, Shigekazu Tomai
  • LANTHANOID-CONTAINING OXIDE TARGET
    Publication number: 20100282604
    Abstract: An oxide target including indium (In) and an element (A) selected from the following group A, wherein it contains an oxide shown by AInO3, Group A: lanthanum (La), neodymium (Nd), ytterbium (Yb), erbium (Er) and dysprosium (Dy).
    Type: Application
    Filed: August 6, 2007
    Publication date: November 11, 2010
    Inventors: Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka
  • TFT SUBSTRATE AND TFT SUBSTRATE MANUFACTURING METHOD
    Publication number: 20100283055
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
    Type: Application
    Filed: November 30, 2006
    Publication date: November 11, 2010
    Inventors: Kazuyoshi Inoue, Koki Yano, Nobuo Tanaka, Tokie Tanaka
  • TFT SUBSTRATE AND METHOD FOR MANUFACTURING TFT SUBSTRATE
    Publication number: 20100285632
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
    Type: Application
    Filed: July 20, 2010
    Publication date: November 11, 2010
    Inventors: Kazuyoshi INOUE, Koki Yano, Nobuo Tanaka, Tokie Tanaka