Patents by Inventor Kazuyoshi Mizutani

Kazuyoshi Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10126653
    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: November 13, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Kaoru Iwato, Shohei Kataoka, Shinji Tarutani, Sou Kamimura, Keita Kato, Yuichiro Enomoto, Kazuyoshi Mizutani, Toru Tsuchihashi, Kana Fujii
  • Patent number: 9929376
    Abstract: Provided are a laminate which is capable of forming an excellent organic semiconductor pattern, a kit for manufacturing an organic semiconductor, which is used to manufacture such a laminate, and a resist composition for manufacturing an organic semiconductor, which is used for the kit for manufacturing an organic semiconductor. The laminate includes an organic semiconductor film, a protective film on the organic semiconductor film, and a resist film on the protective film, in which the resist film is formed of a photosensitive resin composition that contains a photoacid generator (A) which generates an organic acid of which a pKa of the generated acid is ?1 or less and a resin (B) which reacts with an acid generated by the photoacid generator so that the rate of dissolution in a developer containing an organic solvent is decreased.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: March 27, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Kazuyoshi Mizutani, Yu Iwai, Ichiro Koyama, Yoshitaka Kamochi
  • Patent number: 9709892
    Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa??1.5 when exposed to actinic rays or radiation.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: July 18, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Shohei Kataoka, Kaoru Iwato, Sou Kamimura, Toru Tsuchihashi, Yuichiro Enomoto, Kana Fujii, Kazuyoshi Mizutani, Shinji Tarutani, Keita Kato
  • Patent number: 9551935
    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ?SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: January 24, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Keita Kato, Shinji Tarutani, Toru Tsuchihashi, Sou Kamimura, Yuichiro Enomoto, Kana Fujii, Kaoru Iwato, Shohei Kataoka, Kazuyoshi Mizutani
  • Publication number: 20160240816
    Abstract: Provided are a laminate which is capable of forming an excellent organic semiconductor pattern, a kit for manufacturing an organic semiconductor, which is used to manufacture such a laminate, and a resist composition for manufacturing an organic semiconductor, which is used for the kit for manufacturing an organic semiconductor. The laminate includes an organic semiconductor film, a protective film on the organic semiconductor film, and a resist film on the protective film, in which the resist film is formed of a photosensitive resin composition that contains a photoacid generator (A) which generates an organic acid of which a pKa of the generated acid is ?1 or less and a resin (B) which reacts with an acid generated by the photoacid generator so that the rate of dissolution in a developer containing an organic solvent is decreased.
    Type: Application
    Filed: April 27, 2016
    Publication date: August 18, 2016
    Applicant: FUJIFILM Corporation
    Inventors: Kazuyoshi MIZUTANI, Yu IWAI, Ichiro KOYAMA, Yoshitaka KAMOCHI
  • Publication number: 20150197663
    Abstract: There is provided a pattern forming method through self-organization of a block copolymer, containing an annealing step after application of a self-organizing composition for forming pattern that contains a block copolymer containing a block having a repeating unit represented by the specific general formula, and contains an organic solvent, to a substrate, and wherein after a microphase-separated structure is formed in the annealing step, one domain thereof is selectively removed to form a pattern.
    Type: Application
    Filed: March 26, 2015
    Publication date: July 16, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Kazuyoshi MIZUTANI, Tsukasa YAMANAKA
  • Patent number: 8785104
    Abstract: A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: July 22, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Kazuyoshi Mizutani, Jiro Yokoyama, Shinichi Sugiyama
  • Patent number: 8603733
    Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: December 10, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Shinji Tarutani, Hideaki Tsubaki, Kazuyoshi Mizutani, Kenji Wada, Wataru Hoshino
  • Publication number: 20130017377
    Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa?1.5 when exposed to actinic rays or radiation.
    Type: Application
    Filed: March 25, 2011
    Publication date: January 17, 2013
    Applicant: FUJIFILM CORPORATION
    Inventors: Shohei Kataoka, Kaoru Iwato, Sou Kamimura, Toru Tsuchihashi, Yuichiro Enomoto, Kana Fujii, Kazuyoshi Mizutani, Shinji Tarutani, Keita Kato
  • Publication number: 20130011785
    Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ?SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.
    Type: Application
    Filed: March 25, 2011
    Publication date: January 10, 2013
    Applicant: FUJIFILM CORPORATION
    Inventors: Keita Kato, Shinji Tarutani, Toru Tsuchihashi, Sou Kamimura, Yuichiro Enomoto, Kana Fujii, Kaoru Iwato, Shohei Kataoka, Kazuyoshi Mizutani
  • Patent number: 8349535
    Abstract: According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: January 8, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Kana Fujii, Takamitsu Tomiga, Toru Tsuchihashi, Kazuyoshi Mizutani, Jiro Yokoyama, Shinichi Sugiyama, Shuji Hirano, Toru Fujimori
  • Publication number: 20120321855
    Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
    Type: Application
    Filed: February 24, 2011
    Publication date: December 20, 2012
    Applicant: FUJIFILM CORPORATION
    Inventors: Kaoru Iwato, Shohei Kataoka, Shinji Tarutani, Sou Kamimura, Keita Kato, Yuichiro Enomoto, Kazuyoshi Mizutani, Toru Tsuchihashi, Kana Fujii
  • Patent number: 8142977
    Abstract: A positive resist composition, includes: (B1) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B1) in an aqueous alkali solution, the resin (B1) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification; (B2) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B2) in an aqueous alkali solution, the resin (B2) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification and containing a specific aromatic ring structure-containing repeating unit as defined in the specification; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: March 27, 2012
    Assignee: Fujifilm Corporation
    Inventors: Kazuyoshi Mizutani, Shinichi Sugiyama
  • Patent number: 8092977
    Abstract: A positive resist composition, includes: (A) a resin having a repeating unit represented by formula (A) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (A) in an alkali developer; and a pattern forming method uses the composition.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: January 10, 2012
    Assignee: Fujifilm Corporation
    Inventor: Kazuyoshi Mizutani
  • Patent number: 8084187
    Abstract: Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
    Type: Grant
    Filed: March 25, 2009
    Date of Patent: December 27, 2011
    Assignee: Fujifilm Corporation
    Inventors: Kazuyoshi Mizutani, Toru Tsuchihashi
  • Publication number: 20110305992
    Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
    Type: Application
    Filed: August 2, 2011
    Publication date: December 15, 2011
    Applicant: FUJIFILM Corporation
    Inventors: Shinji TARUTANI, Hideaki TSUBAKI, Kazuyoshi MIZUTANI, Kenji WADA, Wataru HOSHINO
  • Patent number: 8034547
    Abstract: A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: October 11, 2011
    Assignee: FUJIFILM Corporation
    Inventors: Hideaki Tsubaki, Shinji Tarutani, Kazuyoshi Mizutani, Kenji Wada, Wataru Hoshino
  • Patent number: 8017304
    Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: September 13, 2011
    Assignee: FUJIFILM Corporation
    Inventors: Shinji Tarutani, Hideaki Tsubaki, Kazuyoshi Mizutani, Kenji Wada, Wataru Hoshino
  • Patent number: 7989137
    Abstract: A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: August 2, 2011
    Assignee: Fujifilm Corporation
    Inventors: Shuji Hirano, Kazuyoshi Mizutani, Shinichi Sugiyama, Jiro Yokoyama
  • Patent number: 7923196
    Abstract: A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: April 12, 2011
    Assignee: FUJIFILM Corporation
    Inventors: Toru Tsuchihashi, Kazuyoshi Mizutani, Shuji Hirano, Jiro Yokoyama, Shinichi Sugiyama