Abstract: The invention provides a positive resist composition for the pattern formation by the use of actinic rays or radiation, ensuring that the sensitivity, resolution and pattern profile are good, the line edge roughness is small and the surface roughness is satisfied, and a pattern forming method using the composition, wherein the positive resist composition is a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (B) a resin of which solubility in an alkali developer increases under the action of an acid, the resin comprising a specific repeating unit; and a pattern forming method using the composition.

Abstract: A resist composition comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) at least one compound represented by formula (II) or (II?): wherein AR represents a substituted or unsubstituted benzene ring or a substituted or unsubstituted naphthalene ring; Rn represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group or a substituted or unsubstituted aryl group; and A represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a halogen atom, a cyano group or a substituted or unsubstituted alkyloxycarbonyl group: wherein Rfa and Rfb each independently represents a monovalent organic group having a fluorine atom, and two Rfa's or three Rfb's may be the same or different and may combine with each other to form a ring; and X+ represents a sulfonium cation or an iodonium cation, and a pattern forming method uses the same.

Abstract: A resist composition, comprises: (A) a resin containing a repeating unit represented by formula (I); (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) a solvent containing: (C1) a propylene glycol monoalkyl ether carboxylate; and (C2) at least one member selected from the group consisting of a propylene glycol monoalkyl ether, an alkyl lactate, an acetic acid ester, an alkyl alkoxypropionate, a chain ketone and a cyclic ketone: wherein AR represents a substituted or unsubstituted benzene ring or a substituted or unsubstituted naphthalene ring; Rn represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group or a substituted or unsubstituted aryl group; and A represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a halogen atom, a cyano group or a substituted or unsubstituted alkyloxycarbonyl group, and the pattern forming method uses the same.

Abstract: A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.

Abstract: A positive resist composition comprising: (A) a resin having a repeating unit represented by a specific formula (I) and a repeating unit represented by a specific formula (A1); (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (F) a surfactant represented by a specific formula (II); and a pattern forming method using the same.

Abstract: A positive resist composition comprising (A) a fluorine group-containing resin, which has a structure substituted with a fluorine atom in the main chain and/or side chain of polymer skeleton and a group that is decomposed by the action of an acid to increase solubility in an alkali developer and (B) an acid generator capable of generating an acid upon irradiation of an actinic ray or radiation, and the acid generator of (B) is a compound selected from a sulfonium salt containing no aromatic ring and a compound having a phenacylsulfonium salt structure.

Abstract: A positive working resist composition comprising (A1) a resin containing a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification and having a property of being insoluble or sparingly soluble in an alkali developing solution and becoming soluble in an alkali developing solution by the action of an acid, and (B) a compound capable of generating sulfonic acid upon irradiation with active rays or radiations in an amount of from 5 to 20% by weight based on the total solid content of the positive working resist composition.

Abstract: A resist composition comprising at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group; and a pattern forming method using the composition.

Abstract: A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.

Abstract: A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.

Abstract: A positive resist composition which can be suitably used in an ultramicrolithography process such as production of VLSI or high-capacity microchip and in other photofabrication processes and can ensure good sensitivity, resolution, pattern profile and line edge roughness when irradiated with actinic rays or radiation, particularly, electron beam, X-ray or EUV; and a pattern formation method using the composition, are provided, the positive resist composition comprising (A) a resin comprising a specific acryl-based repeating unit and a specific styrene-based repeating unit, which increases the dissolution rate in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent; and a pattern formation method using the composition.

Abstract: A positive resist composition comprising a polymer capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin comprises repeating units containing at least two special types of acetal structures separately, a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and a solvent.

Abstract: A positive resist composition comprising a polymer capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin comprises repeating units containing at least two special types of acetal structures separately, a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and a solvent.

Abstract: A positive resist composition comprising (A) polysiloxane or polysilsesquioxane that has a property of increasing solubility in an alkali developing solution by the action of an acid and contains a group capable of being decomposed with an acid, (B) a compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation and (C) an organic basic compound, wherein an amount of the compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation is from 6 to 20% by weight based on the total solid content of the positive resist composition.

Abstract: The photosensitive resin composition of the present invention is an excellent photosensitive resin composition: exhibiting significant transmissibility at the use of an exposure light source of 160 nm or less, more specifically F2 excimer laser light, where line edge roughness and development time dependence are small and a problem of footing formation is improved; and comprising a resin which decomposes by an action of acid to increase the solubility in alkali developer, in which the resin contains a specific repeat unit; a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, in which the compound includes at least two kinds of compounds selected from the group consisting of specific compounds (B1), (B2), (B3) and (B4).

Abstract: A positive photoresist composition containing: (A) a resin which contains at least one of a repeating unit represented by the formula (IA) defiend herein and a repeating unit represented by the formula (IB) defined herein, and is decomposed by an action of an acid and shows an increase in a solubility in an alkali developer; and (B) as compounds capable of generating an acid upon irradiation with one of an actinic ray and a radiation, at least two compounds selected from the compounds (B1), (B2), (B3) and (B4) as defiend herein.

Abstract: A positive resist composition comprising: (A1) a resin containing at least one type of repeating unit represented by the specific formula and additionally containing at least one type of repeating unit represented by the specific formula, which increases the solubility in an alkali developing solution by the action of an acid, and (B) a compound which is capable of generating an acid by the action of actinic ray or radiation.

Abstract: A positive resist composition comprising: a compound having at least two acid-decomposable groups, an aromatic ring and an alkylene or cycloalkylene chain and having a molecular weight of 2,000 or less, of which solubility in an alkali developer increases under an action of an acid; and a compound represented by the formula (B-1) as defined herein, which generates an acid upon irradiation with actinic rays or radiation.

Abstract: A positive resist composition including: (A-1) a resin of which a solubility in an alkali developer increases under the action of an acid, the resin including a repeating unit represented by formula (Ia) and a repeating unit represented by formula (A1); and (B) a compound capable of generating an acid upon irradiation with one of actinic ray and radiation: wherein in the formula (Ia), AR represents an aromatic group, and X1 represents a group having a carbon number of 5 or more and being capable of decomposing under the action of an acid, and in the formula (A1), m represents an integer of one of 1 and 2.

Abstract: A positive resist composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution and includes a specific repeating unit and (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and a pattern formation method using the positive resist composition.