Patents by Inventor Kazuyoshi Yamashita
Kazuyoshi Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200127028Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: ApplicationFiled: December 18, 2019Publication date: April 23, 2020Applicant: Sony CorporationInventors: Jun Okuno, Kazuyoshi Yamashita
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Publication number: 20200091213Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.Type: ApplicationFiled: November 25, 2019Publication date: March 19, 2020Inventor: KAZUYOSHI YAMASHITA
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Patent number: 10594969Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: April 18, 2019Date of Patent: March 17, 2020Assignee: Sony CorporationInventors: Takashi Machida, Kazuyoshi Yamashita
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Patent number: 10559609Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: GrantFiled: January 10, 2019Date of Patent: February 11, 2020Assignee: Sony CorporationInventors: Jun Okuno, Kazuyoshi Yamashita
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Patent number: 10559608Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: GrantFiled: January 9, 2019Date of Patent: February 11, 2020Assignee: Sony CorporationInventors: Jun Okuno, Kazuyoshi Yamashita
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Patent number: 10546887Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.Type: GrantFiled: August 10, 2018Date of Patent: January 28, 2020Assignee: SONY CORPORATIONInventor: Kazuyoshi Yamashita
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Publication number: 20200029037Abstract: A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer.Type: ApplicationFiled: September 30, 2019Publication date: January 23, 2020Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA
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Publication number: 20200007805Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: September 12, 2019Publication date: January 2, 2020Applicant: SONY CORPORATIONInventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
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Patent number: 10510786Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: GrantFiled: March 20, 2018Date of Patent: December 17, 2019Assignee: Sony CorporationInventors: Jun Okuno, Kazuyoshi Yamashita
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Publication number: 20190371841Abstract: An imaging device includes a pixel array including a plurality of pixel units in a matrix arrangement. At least a first pixel unit of the plurality of pixel units includes a substrate including a first photoelectric conversion region and a second photoelectric conversion region, and a first layer over the substrate and including a first pixel circuit and a second pixel circuit. The first pixel unit includes a second layer over the first layer and including first and second wirings extending in a first direction, and a third layer over the second layer and including signal lines that extend in the second direction. The first pixel unit includes a first via that couples a first signal line to the first wiring, and a second via offset from the first via in the first direction and that couples a second signal line to the second wiring.Type: ApplicationFiled: February 8, 2018Publication date: December 5, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Kazuyoshi YAMASHITA
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Patent number: 10490581Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: August 28, 2018Date of Patent: November 26, 2019Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 10469783Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.Type: GrantFiled: November 30, 2016Date of Patent: November 5, 2019Assignee: SONY CORPORATIONInventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita, Ryoto Yoshita
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Patent number: 10431622Abstract: The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.Type: GrantFiled: March 9, 2016Date of Patent: October 1, 2019Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Kazuyoshi Yamashita
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Publication number: 20190246055Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: April 18, 2019Publication date: August 8, 2019Applicant: SONY CORPORATIONInventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
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Patent number: 10320091Abstract: An array antenna for satellite communications includes a first sub-array and a second sub-array, each including a plurality of antenna elements arrayed in a matrix with a regular pitch, the first sub-array and the second sub-array being shifted relative to each other in a satellite orbital direction.Type: GrantFiled: June 1, 2015Date of Patent: June 11, 2019Assignee: Mitsubishi Electric CorporationInventors: Kazuyoshi Yamashita, Tomohiro Takahashi
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Publication number: 20190172869Abstract: The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.Type: ApplicationFiled: January 29, 2019Publication date: June 6, 2019Inventor: KAZUYOSHI YAMASHITA
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Patent number: 10313618Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: April 4, 2018Date of Patent: June 4, 2019Assignee: Sony CorporationInventors: Takashi Machida, Kazuyoshi Yamashita
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Publication number: 20190148426Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: ApplicationFiled: January 10, 2019Publication date: May 16, 2019Inventors: Jun Okuno, Kazuyoshi Yamashita
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Publication number: 20190148425Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: ApplicationFiled: January 9, 2019Publication date: May 16, 2019Inventors: Jun Okuno, Kazuyoshi Yamashita
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Publication number: 20190014278Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.Type: ApplicationFiled: November 30, 2016Publication date: January 10, 2019Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA