Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A limit switch includes: a switch main body capable of being switched on and off; and an operation unit connected to the switch main body.

Abstract: An input device includes: a plurality of input members; an upper surface having a right region in which a part of the plurality of input members is disposed, a left region in which another part of the plurality of input members is disposed, and a center region that is a region between the right region and the left region; and a light emitting region formed along an outer edge of the center region. The light emitting region includes a first light emitting portion configured to indicate identification information assigned to a plurality of input devices connected to an information processing apparatus, and a second light emitting portion configured to emit light based on information different from the identification information.

Abstract: Provided is a wheel loader capable of reducing erroneous determination of rear wheel lifting. The wheel loader 1 includes a controller 5 for determining a rear wheel lifting state where rear wheels 11B are lifted upwardly. The controller 5 is configured to, when a temporal change rate ? of a bucket operation angle becomes a temporal change rate of a bucket operation angle necessary for a tilt operation of a bucket 23 during an excavation operation and a temporal change rate ? of a vehicle body inclination angle estimated by the controller 5 becomes a temporal change rate of an obliquely upward inclination state of a rear vehicle body with respect to a front vehicle body, turn on a correlation flag indicating a correlation between an operation state of the bucket 23 and an inclination state of a vehicle body to determine a rear wheel lifting.

Abstract: An aromatic polysulfone having one or mom functional groups selected from the group consisting of an acidic group having a pKa equal to or smaller than a pKa of a carboxy group and a salt of the acidic group at a main chain terminal, in which the amount of the functional group, calculated from a peak area ratio in 1H-NMR, is 0.35 to 40 per 100 units of repeating units forming the main chain of the aromatic polysulfone.

Abstract: A poly(biphenyl ether sulfone) resin substantially comprising a repeating structure of the following formula (1), wherein a polystyrene equivalent mass average molecular weight Mw and a melt viscosity ? at a temperature of 350° C. satisfy formulas (6) and (7), wherein n represents an integer of 1 or more, 60,000?Mw?90,000??(6) 0.0906×Mw?4,930???3,500??(7).

Abstract: A semiconductor device according to an embodiment includes first and second electrodes, a gate electrode, first to third semiconductor regions, and first and second insulating parts. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The first insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode is located in the first insulating part. The gate electrode faces the second semiconductor region. The second insulating part is located on the third semiconductor region. The second insulating part is not overlapping the gate electrode. The second insulating part has tensile stress. The second electrode is located on the second insulating part and electrically connected with the third semiconductor region.

Abstract: The present invention relates to a resin composition containing: an epoxy resin; and an aromatic polysulfone resin containing an amino group-containing aromatic polysulfone having an amino group at at least one terminal of a main chain of a polymer chain, in which a number average molecular weight of the aromatic polysulfone resin is 10,000 or less.

Abstract: A process control system 100 includes a plurality of controller devices 10 each of which performs process control on a plant, and an input-output device 20 that is connected to a target device of the process control. The input-output device 20 is installed in a different on-premise environment from the plurality of controller devices 10. Each of the controller devices 10 is connected to the input-output device 20 by a different closed network 40, and transmits and receives information on the process control on the plant to and from the input-output device 20.

Abstract: Provided is a wheel loader capable of exhibiting sufficient excavation performance while suppressing slip during excavation. A control device provided on a wheel loader according to the present invention is configured to determine a reduction value (?f?) of traveling drive force based on first vehicle body acceleration (av1) of a vehicle body calculated from acceleration detected by an acceleration sensor, second vehicle body acceleration (av2) of the vehicle body calculated from rotational speed of wheels detected by a rotational speed sensor, and thrust (ph) of a hydraulic cylinder detected by a thrust sensor, and reduce the traveling drive force based on the reduction value and output the reduced traveling drive force.

Abstract: Provided is a construction machine capable of improving the accuracy of load weight measurement without reducing the operational efficiency of a working device. A wheel loader 1 as a construction machine comprises a hydraulically driven working device 2 and a controller 5,5A for measuring the weight of a load, wherein the wheel loader 1 includes a changeover switch 121 as a changeover device for switching whether to measure the weight of the load, and in a case where an attitude of the working device 2 satisfies a predetermined load measurement condition, the changeover switch 121 is valid, and pistons 222, 242 are positioned in a first area provided on one end side or in a second area provided on the other end side, the controller 5, 5A limits the command current to be output to lift arm solenoid proportional valves 45 and the bucket solenoid proportional valves 46.

Abstract: Provided is a work vehicle capable of reducing the fuel consumption while maintaining the working efficiency. A wheel loader 1 comprising a vehicle body controller 5, 5A for controlling an engine 41, wherein the vehicle body controller 5, 5A limits an upper limit rotational speed of the engine 41 based on an accelerator pedal step-on amount ?, a brake pedal step-on amount ?, a torque converter speed ratio e which is a ratio of a rotational speed of a torque converter 42, a discharge pressure P1 of a loading hydraulic pump 44, and a stroke amount S1 of lift arm cylinders 22 or a stroke amount S2 of a bucket cylinder 24.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor part located between the first electrode and the second electrode, a third electrode located in the semiconductor part, an insulating film located between the third electrode and the semiconductor part, an insulating member located in the semiconductor part at a position separated from the insulating film, a fourth electrode located in the insulating member, and a compressive stress member located in the fourth electrode. The compressive stress member has compressive stress along a first direction. The first direction is from the first electrode toward the second electrode.

Abstract: An insulating device includes a first element, a second element, a first lead, a second lead, and a resin member. The second element is electrically connected to the first element. The first element is mounted on the first lead. The second lead includes a first surface and a second surface, the second surface being at a side opposite to the first surface. The second element is mounted to the first surface. the second lead is arranged to overlap the first element in a direction crossing the second surface of the second lead. The resin member seals the first element, the second element, the first lead, and the second lead.

Abstract: A method for producing an aromatic polysulfone by a polycondensation reaction between an aromatic dihalogenosulfone compound and an aromatic dihydroxy compound is described. The polycondensation reaction is performed in the presence of at least one aromatic end-capping agent; and an amount, p mol, of the aromatic dihalogenosulfone compound, an amount, q mol, of the aromatic dihydroxy compound, and an amount, r mol, of the aromatic end-capping agent have a relationship satisfying formula (S1) below and formula (S2) below: r/(p?q)<2 ??(S1), and p>q ??(S2).

Abstract: An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

Abstract: An insulating element includes a first coil; a second coil; and an inter-layer insulating film located between the first coil and the second coil. The inter-layer insulating film includes a first layer, a second layer, and a third layer located between the first layer and the second layer. The first layer is located between the first coil and the third layer. The second layer is located between the second coil and the third layer. A bandgap of the third layer is narrower than a bandgap of the first layer and a bandgap of the second layer.

Abstract: A controller is a controller forming, with another controller, a redundant controller. The controller includes a communication function unit that performs communication with an external device capable of executing control calculation needed for process control for a plant, and a redundancy management unit that switches states of the controller between an active state where a result of the control calculation obtained from the external device via the communication function unit is reflected in the process control and a standby state where the result of the control calculation is not reflected in the process control. The redundancy management unit switches the states of the controller to bring one of the controller and the another controller into the active state.

Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A semiconductor device according to an embodiment includes first and second electrodes, a gate electrode, first to third semiconductor regions, and first and second insulating parts. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The first insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode is located in the first insulating part. The gate electrode faces the second semiconductor region. The second insulating part is located on the third semiconductor region. The second insulating part is not overlapping the gate electrode. The second insulating part has tensile stress. The second electrode is located on the second insulating part and electrically connected with the third semiconductor region.