Abstract: The present invention is a polybiphenyl ether sulfone resin substantially composed of a repeating structure of the folio wing Formula (1), and when a test piece with a notch is molded by injection molding the polybiphenyl ether sulfone resin, an Izod impact value of the test piece with a notch after being subjected to heat treatment at 180° C. for 48 hours, measured in accordance with ASTM D256, is 300 J/m or more.

Abstract: Provided is a work machine capable of notifying that maintenance is necessary due to continuation of clogging in a cooling device or decrease in cooling performance. A wheel loader 1 including a radiator 31 and an oil cooler 32 comprises a controller 5, 5A configured to determine a clogging continuation state of the radiator 31 or the oil cooler 32. The controller 5, 5A determines whether clogging is occurring in the radiator 31 or the oil cooler 32 based on outside air temperature AW and cooling water temperature CW or hydraulic oil temperature HW, determines whether the clogging continues based on a clogging occurrence ratio R1, R2 while an engine 30 is operating, and outputs a notification command signal for providing the alarm buzzer 61 and the user management system 62 with a command to notify that maintenance is necessary when it is determined that the clogging continues.

Abstract: An aromatic polysulfone includes an amino group-containing aromatic polysulfone containing a repeating unit represented by the following general formula (A) and having an amino group at a polymer chain end. The aromatic polysulfone has a weight average absolute molecular weight (Mw) of 20,000 g/mol or more and a reduced viscosity (unit: dL/g) of 0.30 or more. -Ph1-SO2-Ph2-O—??(A) In formula (A), Ph1 and Ph2 are each independently a phenylene group which may have a substituent.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions, first and second insulating parts, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor regions are provided selectively on the second semiconductor region. The first insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The second electrode is provided inside the first insulating part. The gate electrode is provided inside the first insulating part and electrically isolated from the second electrode. The third electrode is provided on the second and third semiconductor regions. The third electrode includes a contact part provided between the third semiconductor regions. The second insulating part is provided between the first semiconductor region and the contact part.

Abstract: An aromatic polysulfone includes an amino group-containing aromatic polysulfone containing a repeating unit represented by the following general formula (A) and having an amino group at a polymer chain end. The aromatic polysulfone has a weight average absolute molecular weight (Mw) of 20,000 g/mol or more and a reduced viscosity (unit: dL/g) of 0.30 or more. -Ph1-SO2-Ph2-O—??(A) In formula (A), Ph1 and Ph2 are each independently a phenylene group which may have a substituent.

Abstract: The present invention relates to an aromatic polysulfone composition including an aromatic polysulfone (P1) and an aromatic polysulfone (P2) different from the aromatic polysulfone (P1), in which the (P1) contains an amino group-containing aromatic polysulfone which has an amino group at a polymer chain terminal and of which a weight-average absolute molecular weight (Mw) is less than 20,000 g/mol, the (P2) substantially consists of a repeating unit represented by General Formula (A) and a glass transition temperature (Tg) of the (P2) is higher than or equal to 222° C., and the weight-average absolute molecular weight (Mw) of the aromatic polysulfone composition is larger than the weight-average absolute molecular weight (Mw) of the amino group-containing aromatic polysulfone.

Abstract: The present invention provides a polycrystalline silicon rod whose rod surface portion has a phosphorus concentration of 0.015 ppba or less, in which the ratio (P2/P1) of the phosphorus concentration (P2) of the rod center portion to the phosphorus concentration (P1) of the rod surface portion is within the range of 2 or lower. The present invention also provides a method for producing a polycrystalline silicon rod by the Siemens method that assembles a polycrystalline silicon seed rod in a reactor, then heats the seed rod up to a temperature of 1000° C. or more and less than the melting point of silicon by energization heating, and supplies a raw material gas including trichlorosilane gas and hydrogen gas as the main components to the reactor at the heating temperature to deposit and grow silicon on the seed rod surface.

Abstract: A method for producing an aromatic polysulfone that includes subjecting 4,4?-dichlorodiphenylsulfone and an aromatic dihydroxy compound to a polycondensation reaction, wherein the median diameter (D50) of the 4,4?-dichlorodiphenylsulfone is not more than 1,000 ?m.

Abstract: Aromatic polyester particles which are formed from an aromatic polyester having a flow starting temperature of 400° C. or higher and have a circularity of a projected image of 0.80 or more and 1.00 or less.

Abstract: A poly(biphenyl ether sulfone) resin substantially comprising a repeating structure of the following formula (1), wherein a polystyrene equivalent mass average molecular weight Mw and a melt viscosity ? at a temperature of 350° C. satisfy formulas (6) and (7), wherein n represents an integer of 1 or more, 60,000?Mw?90,000 ??(6) 0.0906×Mw?4,930???3,500 ??(7).

Abstract: The present invention relates to a poly(biphenyl ether sulfone) resin substantially comprising a repeating structure of the following formula (1), and having a spin-lattice relaxation time TIL of a long component of 24 s or more, which is calculated from decay of a signal intensity I (?) corresponding to a chemical shift of 129 ppm by acquiring a 13C-NMR spectrum by a Torchia pulse sequence using an NMR device for solid sample measurement and changing a value of a waiting time ? in the pulse sequence, wherein n represents an integer of 1 or more.

Abstract: Provided is a wheel loader capable of reducing erroneous determination of rear wheel lifting. The wheel loader 1 includes a controller 5 for determining a rear wheel lifting state where rear wheels 11B are lifted upwardly. The controller 5 is configured to, when a temporal change rate ? of a bucket operation angle becomes a temporal change rate of a bucket operation angle necessary for a tilt operation of a bucket 23 during an excavation operation and a temporal change rate ? of a vehicle body inclination angle estimated by the controller 5 becomes a temporal change rate of an obliquely upward inclination state of a rear vehicle body with respect to a front vehicle body, turn on a correlation flag indicating a correlation between an operation state of the bucket 23 and an inclination state of a vehicle body to determine a rear wheel lifting.

Abstract: Provided is a work machine capable of notifying that maintenance is necessary due to continuation of clogging in a cooling device or decrease in cooling performance. A wheel loader 1 including a radiator 31 and an oil cooler 32 comprises a controller 5, 5A configured to determine a clogging continuation state of the radiator 31 or the oil cooler 32. The controller 5, 5A determines whether clogging is occurring in the radiator 31 or the oil cooler 32 based on outside air temperature AW and cooling water temperature CW or hydraulic oil temperature HW, determines whether the clogging continues based on a clogging occurrence ratio R1, R2 while an engine 30 is operating, and outputs a notification command signal for providing the alarm buzzer 61 and the user management system 62 with a command to notify that maintenance is necessary when it is determined that the clogging continues.

Abstract: A resin film having an aromatic polysulfone as a forming material is provided. The resin film has a thickness of less than 100 ?m, and further contains an organic compound having a boiling point no lower than 250° C. and no higher than 400° C. The organic compound is contained in an amount of at least 500 ppm and at most 4000 ppm relative to the mass of the aromatic polysulfone.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions, first and second insulating parts, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor regions are provided selectively on the second semiconductor region. The first insulating part is arranged with the third and second semiconductor regions, and a portion of the first semiconductor region. The second electrode is provided inside the first insulating part. The gate electrode is provided inside the first insulating part and electrically isolated from the second electrode. The third electrode is provided on the second and third semiconductor regions. The third electrode includes a contact part provided between the third semiconductor regions. The second insulating part is provided between the first semiconductor region and the contact part.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor portion, a gate electrode, a source electrode, a first structure body, and a first insulating portion. The semiconductor portion includes SiC and includes first to third semiconductor regions. The first semiconductor region includes first to third partial regions. The second partial region is provided between the third partial region and the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region. The source electrode is electrically connected to the second semiconductor region. The first insulating portion includes a first insulating region and a second insulating region. The first insulating region is provided between the first partial region and the gate electrode. The second insulating region is provided between the second semiconductor region and the first structure body. The first structure body includes at least one of polysilicon or TiN.

Abstract: The invention provides an aromatic polysulfone including an aromatic polysulfone having at least one highly polar functional group at its terminus, wherein in the aromatic polysulfone, an area of a signal attributed to the aromatic polysulfone having a highly polar functional group with respect to a total area of all signals attributed to the aromatic polysulfone in a chromatogram obtained by measurement through a gel permeation chromatography method under the following conditions is 19% or more and 100% or less, wherein sample injection volume is 5 ?L, column is “Shodex KF-803” manufactured by Showa Denko K.K., column temperature is 40° C., eluent is N,N-dimethylformamide, eluent flow rate is 0.5 mL/min, and detector is ultraviolet-visible spectrophotometer (UV).

Abstract: The invention provides an aromatic polysulfone including an aromatic polysulfone having at least one highly polar functional group at its terminus, wherein in the aromatic polysulfone, an area of a signal attributed to the aromatic polysulfone having a highly polar functional group with respect to a total area of all signals attributed to the aromatic polysulfone in a chromatogram obtained by measurement through a gel permeation chromatography method under the following conditions is 0.1% or more and 11% or less, wherein the sample injection volume is 5 ?L, column is “Shodex KF-803” manufactured by Showa Denko K.K., column temperature is 40° C., eluent is N,N-dimethylformamide, eluent flow rate is 0.5 mL/min, detector is ultraviolet-visible spectrophotometer (UV), and detection wavelength is 277 nm.

Abstract: The present invention relates to a resin solution composition containing at least one resin selected from the group consisting of aromatic polysulfones, aromatic polyamideimides, aromatic polyetherimides, aromatic polyimides and aromatic polyamic acids, a sulfone-based solvent, and an ester-based solvent, wherein in this resin solution composition, an amount of the resin, relative to the total mass of the resin solution composition, is at least 10% by mass but not more than 50% by mass, and an amount of the ester-based solvent, relative to the total amount of the sulfone-based solvent and the ester-based solvent, is at least 15% by mass but not more than 85% by mass.

Abstract: The present invention relates to a resin solution composition containing at least one resin selected from the group consisting of aromatic polysulfones, aromatic polyamideimides, aromatic polyetherimides, aromatic polyimides and aromatic polyamic acids, a sulfone-based solvent, and an ester-based solvent, wherein in this resin solution composition, an amount of the resin, relative to the total mass of the resin solution composition, is at least 10% by mass but not more than 50% by mass, and an amount of the ester-based solvent, relative to the total amount of the sulfone-based solvent and the ester-based solvent, is at least 15% by mass but not more than 85% by mass.