Abstract: In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (2CR) of a wiring substrate 2 and a semiconductor chip (3). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.

Abstract: In an focus control apparatus, a focus detection unit detects a defocus value, a control unit controls focus position adjustment, a first acquisition unit acquires reliability of the defocus value, a storage unit stores images captured by an image sensor at an in-focus position based on the defocus value and other focus positions and the defocus value detected for each image, in association with each image, and a second acquisition unit acquires a first correction value to be used for correcting the focus position adjustment based on the defocus values of unselected images in a case where the reliability of the defocus value corresponding to a selected image is lower than a first threshold, wherein The control unit adjusts the focus position using the first correction value.

Abstract: The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Abstract: A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. The first conductor pattern includes a first opening in a region overlapping with each of the first terminal pad and the second terminal pad in the second wiring layer.

Abstract: In an image capturing apparatus that sequentially photographs a plurality of images by changing a focus position of a lens unit by a predetermined amount, a display area is selected according to a ratio of a vertical line component to a horizontal line component of a main subject for each of the plurality of images photographed by the image capturing apparatus. A display unit displays a plurality of display areas corresponding to the focus detection area selected by the selection unit, by arranging the plurality of display areas side by side.

Abstract: In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (2CR) of a wiring substrate 2 and a semiconductor chip (3). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.

Abstract: A semiconductor device is provided with improved resistance to noise. Conductive planes are respectively formed over wiring layers. One wiring layer is provided with a through hole land integrally formed with a through hole wiring. In other wiring layers located over the wiring layer with the through hole land, openings are respectively formed in the conductive planes. The area of each of the openings is larger than the plane area of the through hole land.

Abstract: A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.

Abstract: A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.

Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.

Abstract: An image processing apparatus that can reduce the area where acquired images are held and reduce the load in image synthesis when successive images are to be generated. Acquired images are sequentially acquired and held in an acquired image storage circuit. A first set number of acquired images among the acquired images are synthesized to generate first composite images. The first composite images are held in a grouped image storage circuit. Second composite images from an image generated last to an image corresponding to a second set number among the first composite images are synthesized to generate a second composite image. The acquired images used to generate the first composite images are sequentially deleted.

Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.

Abstract: A semiconductor device is provided with improved resistance to noise. Conductive planes are respectively formed over wiring layers. One wiring layer is provided with a through hole land integrally formed with a through hole wiring. In other wiring layers located over the wiring layer with the through hole land, openings are respectively formed in the conductive planes. The area of each of the openings is larger than the plane area of the through hole land.

Abstract: A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.

Abstract: To aim at improvement of reliability of a semiconductor device of flip chip connection type. In assembling a BGA of flip chip connection type, when a semiconductor chip is solder-connected by a flip chip connection, because solder precoat is formed on the surface of a land on the side of an undersurface of a wiring substrate, the connection between the land and a solder ball, which is an external terminal, is solder-connection, and therefore, it is possible to increase impact resistance of a connection part between the land and the solder ball and to aim at improvement of reliability of the BGA.

Abstract: The image pickup apparatus includes an image pickup element 106 including image pickup pixels photoelectrically converting an object image formed by a light flux from an image pickup optical system 202 and focus detection pixels photoelectrically converting two images formed by two divided light fluxes of the light flux from the image pickup optical system. The apparatus further includes an image generator 112 generating an image based on first pixel signals, a focus controller 112 performing focus control for the image pickup optical system based on second pixel signals. A signal processor 112 outputs signals read out from the image pickup pixels after each charge accumulation operation of the image pickup pixels for a predetermined time period as the first pixel signals, and outputs signals obtained by plural charge accumulation operations of the focus detection pixels as the second pixel signals.

Abstract: An image processing apparatus that can reduce the area where acquired images are held and reduce the load in image synthesis when successive images are to be generated. Acquired images are sequentially acquired and held in an acquired image storage circuit. A first set number of acquired images among the acquired images are synthesized to generate first composite images. The first composite images are held in a grouped image storage circuit. Second composite images from an image generated last to an image corresponding to a second set number among the first composite images are synthesized to generate a second composite image. The acquired images used to generate the first composite images are sequentially deleted.

Abstract: The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Abstract: An image sensing apparatus comprises a shutter driving member which drives a shutter blade; a shutter spring which urges the shutter driving member; a shutter charge unit which charges the shutter spring, and is switched between an over-charged state and a travel prepared state; a driving unit which drives the shutter charge unit; a retaining unit which, when the shutter charge unit is set in the travel prepared state, retains the shutter driving member in a state in which the shutter spring is charged; a determination unit which determines whether or not the apparatus is executing a continuous shooting operation; and a controller which, when it is determined that the apparatus is executing the continuous shooting operation, controls to drive the shutter charge unit to the travel prepared state without stopping the shutter charge unit in the over-charged state after the charge operation of the shutter spring is complete.

Abstract: An image pickup apparatus includes a face detector configured to provide a face detection process based on image data obtained from an image pickup optical system that includes a focus lens configured to provide a focus control, a focus lens position extractor configured to extract a focus lens position at which the face detector has actually provided a successful face detection process from among focus lens positions set as a candidate position for the focus lens to be arranged when the face detector provides the face detection process, a focus control range setting part configured to set a focus control range in a focus range that contains the focus lens position extracted by the focus lens position extractor, and an autofocus controller configured to provide autofocus control in the focus control range set by the focus control range setting part.