Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin substantially free from a fluorine atom and a silicon atom and different from the resin (A), (ii) a step of exposing the film, and (iii) a step of performing development by using an organic solvent-containing developer to form a negative pattern.

Abstract: A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.

Abstract: A positive photosensitive composition includes: a resin (A) whose dissolution rate in an alkaline developing solution increases by the action of an acid, the resin (A) containing an acid decomposable repeating unit represented by a general formula (I) and an acid nondecomposable repeating unit represented by a general formula (II); and a compound (B) capable of generating an acid upon irradiation with one of active rays and radiations: wherein Xa1 represents one of a hydrogen atom, an alkyl group, a cyano group, and a halogen atom, A1 represents one of a single bond and a divalent connecting group, ALG represents an acid leaving hydrocarbon group, Xa2 represents one of a hydrogen atom, an alkyl group, a cyano group, and a halogen atom, A2 represents one of a single bond and a divalent connecting group, and ACG represents an acid nonleaving hydrocarbon group.

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

Abstract: Provided is a thermosetting resin composition including an inorganic filler and a thermosetting resin matrix component, in which the inorganic filler includes secondary sintered particles each formed of primary particles of scaly boron nitride, and at least some of the secondary sintered particles each have a maximum cavity diameter of 5 ?m to 80 ?m. The thermosetting resin composition can be used for providing a heat conductive sheet in which electrical insulation property is kept by controlling where the defects such as voids and cracks occur and their size, and which has excellent heat conductivity.

Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.

Abstract: A positive resist composition and a pattern forming method using the resist composition are provided, the resist composition including: (A) a resin containing a repeating structural unit represented by formula (I) as defined in the specification and being capable of decomposing by an action of an acid to increase the solubility in an alkali developer; (B) an acid generator; and (C) a mixed solvent containing at least one solvent selected from the group consisting of the following Group (a) and at least one solvent selected from the group consisting of the following Groups (b) to (d): Group (a): an alkylene glycol monoalkyl ether, Group (b): an alkylene glycol monoalkyl ether carboxylate, Group (c): a linear ketone, a branched chain ketone, a cyclic ketone, a lactone and an alkylene carbonate, and Group (d): a lactic acid ester, an acetic acid ester and an alkoxypropionic acid ester.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF3 partial structure.

Abstract: A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D).

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including (A) a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, (B) an onium salt containing a nitrogen atom in its cation moiety, which onium salt when exposed to actinic rays or radiation, is decomposed to thereby generate an acid, and (C) a compound that when exposed to actinic rays or radiation, generates an acid, the compound being any of compounds of general formulae (1-1) and (1-2) below.

Abstract: The purpose is to provide a fin-integrated type semiconductor device that is a simple structure and has a high heat dissipating characteristic, and to provide a manufacturing method therefor. The semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first plane and a bulge portion formed thereon to encircle the plurality of fins; an insulation layer formed on the second major plane of the base plate; a circuit pattern fixed to the insulation layer; a semiconductor element connected to the circuit pattern; and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins.

Abstract: An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition, having: (A) a resin having a repeating unit represented by formula (I); (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin having at least one repeating unit (x) out of a repeating unit represented by formula (II) and a repeating unit represented by formula (III) and containing substantially neither fluorine atom nor silicon atom, wherein the content of the repeating unit (x) is 90% or more by mole based on all repeating units in the resin (C).

Abstract: There is provided a pattern forming method, including: (a) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin capable of increasing polarity by an action of an acid to decrease solubility in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin, which contains substantially no fluorine atom and silicon atom and is other than the resin (A), (b) exposing the film; and (c) performing development using the organic solvent-containing developer to form a negative type pattern, wherein a receding contact angle of water on the film formed by (a) is 70° or more.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin substantially free from a fluorine atom and a silicon atom and different from the resin (A), (ii) a step of exposing the film, and (iii) a step of performing development by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method including: (i) a process of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a Resin (P) including a non-acid-decomposable Repeating Unit (b1) represented by a following General Formula (b1) and a repeating unit including a group capable of being decomposed by acid and generating a polar group, and a Compound (B) capable of generating an acid through irradiation of actinic rays or irradiation; (ii) a process of exposing the film using actinic rays or radiation with a wavelength of equal to or less than 200 nm; and (iii) a process of developing the exposed film using a developer including an organic solvent containing a hetero atom and carbon atoms having 7 or more carbon atoms to forming a negative tone pattern.

Abstract: A light emitting apparatus includes: a laser element which emits laser light; a light emitting section which generates fluorescence in response to the laser light emitted from the laser element; a parabolic mirror which reflects the fluorescence generated by the light emitting section; and a multilayer filter which transmits the laser light and reflects the fluorescence, the laser element being provided outside the parabolic mirror, the parabolic mirror being provided with a window part through which the laser light passes, and the multilayer filter being provided so as to cover the window part.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided.