Abstract: Provided are a pattern forming method capable of providing good DOF, EL, and watermark defect performance, a resist pattern formed by the pattern forming method, a composition for forming an upper layer film, used in the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to forming a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which a receding contact angle of water on a surface of the upper layer film is 80° or more.

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.

Abstract: An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.

Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract: A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 ?m. The insulating film has a compressive stress per film thickness of not less than 100 MPa/?m.

Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract: A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.

Abstract: An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

Abstract: A pattern forming method including: (i) a process of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a Resin (P) including a non-acid-decomposable Repeating Unit (b1) represented by a following General Formula (b1) and a repeating unit including a group capable of being decomposed by acid and generating a polar group, and a Compound (B) capable of generating an acid through irradiation of actinic rays or irradiation; (ii) a process of exposing the film using actinic rays or radiation with a wavelength of equal to or less than 200 nm; and (iii) a process of developing the exposed film using a developer including an organic solvent containing a hetero atom and carbon atoms having 7 or more carbon atoms to forming a negative tone pattern.

Abstract: A semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first major plane and a bulge portion formed on the first major plane to encircle the plurality of fins, an insulation layer formed on the second major plane of the base plate, a circuit pattern fixed to the insulation layer, a semiconductor element connected to the circuit pattern, and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins, the bulge portion has a widthwise margin on an outer peripheral edge of the base plate, and the sealing resin covers an outer peripheral side face of the bulge portion and the widthwise margin.

Abstract: An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.

Abstract: Disclosed is a pattern forming method including forming an active light sensitive or radiation sensitive film by coating a substrate with an active light sensitive or radiation sensitive resin composition; exposing the active light sensitive or radiation sensitive film; and forming a negative type pattern by developing the exposed active light sensitive or radiation sensitive film using a developer which includes an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) which includes a repeating unit (a) which has an acidic group and a lactone structure and of which, due to a polarity thereof being increased by an action of an acid, a solubility decreases with respect to a developer which includes an organic solvent.

Abstract: An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) generating organic acid by irradiation of actinic ray or radiation, and 1% by mass or more of a resin (C) which has at least one of a fluorine atom and a silicon atom and is different from the resin (P) with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition, wherein, in General Formula (I), R0 represents a hydrogen atom or a methyl group, and each of R1, R2, and R3 independently represents a straight chain or branched alkyl group.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF3 partial structure.