Abstract: Systems, methods, and computer-readable media are disclosed for display devices with transverse planar microphone arrays. In one embodiment, an example device may include a frame that forms a rear portion of the device, a display assembly coupled to the frame, where the display assembly forms a front portion of the device, and a first microphone hole extending through a front face of the display assembly. The device may include a second microphone hole extending through the front face of the display assembly, a speaker coupled to the frame, a power adapter receptacle coupled to the frame, and a fabric cover disposed over the frame, the fabric cover comprising an aperture aligned with the power adapter receptacle. Sound output from the speaker may be directed towards the rear portion of the device.

Abstract: A projector is disposed inside a seatback of a front seat as a vehicle seat; therefore, when a driver as an occupant seated in the front seat checks the rear side with a rearview mirror or the like, the projector can be restrained from entering the field of view of the driver. Accordingly, different from the case in which the projector is disposed on a ceiling of the vehicle cabin or the like and exposed into the vehicle cabin, it is possible to restrain the projector from blocking the field of view of the driver.

Abstract: A photosensitive resin composition including an ethylenically unsaturated compound, a resin having a polarity that increases by the action of an acid, and metal atoms, in which a total content of the metal atoms is from 1 ppt to 30 ppb with respect to a total mass of the photosensitive resin composition, and a content of the ethylenically unsaturated compound is from 0.0001% by mass to 1% by mass with respect to the total mass of the photosensitive resin composition, and a method for producing the same; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the photosensitive resin composition.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.

Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer, in which the composition for forming an upper layer film includes a solvent and a crosslinking agent; and in which the content of a solvent having a hydroxyl group is 80% by mass or less with respect to all the solvents included in the composition for forming an upper layer film. The method for manufacturing an electronic device includes the pattern forming method. The laminate has an actinic ray-sensitive or radiation-sensitive film, and an upper layer film including a crosslinking agent.

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Abstract: A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

Abstract: Systems, methods, and computer-readable media are disclosed for display devices with transverse planar microphone arrays. In one embodiment, an example device may include a frame component having a first portion and a second portion transverse to the first portion, the first portion having a first surface and a second surface. The device may include a first hole extending through the second portion, a first microphone array coupled to the second portion, the first microphone array having a first microphone aligned with the first hole, and a display assembly coupled to the first surface. The device may include a second hole extending through the display assembly and the first portion, and a second microphone array coupled to the second surface, the second microphone array having a second microphone aligned with the second hole.

Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract: A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Abstract: A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 ?m. The insulating film has a compressive stress per film thickness of not less than 100 MPa/?m.

Abstract: An imaging processing system includes one or more image capturing apparatuses, a reading unit configured to read biometric information from an authentication object person, a similarity calculation unit configured to calculate similarity based on a result of comparing biometric information read by the reading unit with true biometric information of the authentication object person, an authentication unit configured to perform authentication based on a comparison between the similarity calculated by the similarity calculation unit and a preliminarily set threshold, and a control unit configured to control, if the authentication performed by the authentication unit is successful, imaging processing, which is performed by the image capturing apparatus, based on the similarity calculated by the similarity calculation unit.