Abstract: A field emission cathode device comprising a semiconductor substrate, a semiconductor cathode electrode layer, emitter tips formed on the cathode electrode layer to emit electrons therefrom, and a gate electrode layer formed on an insulating layer. Each of the emitter tips is arranged in the aligned apertures of the gate electrode layer and the insulating layer. To electrically isolate two adjacent cathode electrode lines from each other, the cathode electrode layer is made of a semiconductor having a conductivity type different from that of the substrate. Alternatively, the cathode electrode is made of a semiconductor having the same conductivity type as that of the substrate, and in this case, a portion between two adjacent cathode electrode lines is made of a heavily doped semiconductor so as to electrically isolate two adjacent cathode electrodes.

Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

Abstract: In a field emission microcathode array, a plurality of cones are arranged in a plurality of blocks, each of plural cones, on the main surface of a substrate, each cone having a sharp tip. A plurality of gate electrode portions respectively correspond to the blocks, each portion having a plurality of openings therein corresponding to the plurality of cones of the respective block, each opening being aligned with and disposed in surrounding relationship relative to the corresponding tip of the respectively associated cone. A plurality of lead electrodes, each configured as a fuse, are respectively connected to the plurality of gate electrode portions and each lead electrode provides an independent connection of the respective gate electrode portion to the common power source. In another embodiment, each gate electrode portion and wiring films connected thereto have respectively high and low resistances.

Abstract: Microscale cold cathodes include a metallic emitter tip with a very sharp end. The microscale cold cathodes are manufactured by forming a cone of metal on a substrate, oxidizing the surface of the cone, and removing the oxidized film from the cone surface to produce an emitter tip.

Abstract: A process for forming a pattern on a substrate which includes depositing a film-forming material from above a mask formed on the substrate and forming a film on the mask and in regions of the substrate not covered by the mask, wherein the film formation is carried out while irradiating an ion beam towards the mask so that the deposition on the side surface portion of a deposition material being deposited on the mask is inhibited by ion milling. An electronic device such as a micro field emission cathode or a multi-layer circuit structure is effectively formed using the process.

Abstract: A charged particle beam deflector has a simple structure for providing a uniform potential distribution over each blanking aperture. The deflector is easy to operate, and stabilizes the shape of a charged particle beam component passing through each blanking aperture even with a low deflection voltage. A pair of deflecting electrodes are arranged on opposing inner walls of each blanking aperture. A voltage applied to the deflecting electrodes is controlled to correctly deflect the charged particle beam component passing through the blanking aperture. A pair of resistance films are arranged on the other opposing inner walls of the blanking aperture, to connect both sides of the deflecting electrodes.The deflector may employ patterned beam generating apertures. A pair of deflecting electrodes are formed on opposing inner walls of each of the apertures. A voltage applied to the deflecting electrodes is controlled to correctly deflect a charged particle beam component passing through the aperture.

Abstract: A process for producing an ion implanted bubble device having bubble propagation tracks formed by implanting ions in a magnetic layer formed on a substrate. The process includes: implanting ions in the magnetic layer for forming a desirable bubble propagation track thereon; exposing the ion implanted magnetic layer to plasma in order to enhance the anisotropy field change .DELTA.Hk; coating an intermediate insulation film over the magnetic layer treated with plasma; and forming bubble propagation patterns of ferromagnetic material and/or conductor patterns of conductive material on the intermediate insulation film.