Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first and second gate electrode layers, an inter-layer insulating layer, a channel layer, a tunneling insulating layer, first and second charge storage portions, and a blocking insulating layer. The channel layer is separated from the first and second gate electrode layers, and the inter-layer insulating layer. The tunneling insulating layer is provided between the first gate electrode layer and the channel layer. The first charge storage portion is provided between the first gate electrode layer and the tunneling insulating layer. The second charge storage portion is provided the second gate electrode layer and the tunneling insulating layer. The blocking insulating layer is provided between the inter-layer insulating layer and the tunneling insulating layer, between the first gate electrode layer and the first charge storage portion, between the inter-layer insulating layer and the first charge storage portion.

Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

Abstract: A semiconductor memory device includes a plurality of first interconnections extending in a first direction, and a second interconnection extending in a second direction different from the first direction. The device further includes a resistance change film provided between the plurality of first interconnections and the second interconnection, the resistance change film including(a) silicon and a semiconductor layer including one or more elements selected from among oxygen, carbon, nitrogen, phosphorus, boron, and germanium, or (b) a first layer containing the germanium and a second layer containing the silicon.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

Abstract: According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

Abstract: According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

Abstract: A semiconductor memory device includes a first electrode layer; a second electrode layer provided above the first electrode layer; a first insulating oxide layer provided between the first and second electrode layers; a semiconductor layer extending through the first electrode layer, the first insulating oxide layer and the second electrode layer that are stacked in the first direction; and a second insulating oxide layer extending in the first direction between the semiconductor layer and the first insulating oxide layer, the second insulating oxide layer being in contact with the first insulating oxide layer. At least one of the first insulating oxide layer and the second insulating oxide layer includes nitrogen atoms. The nitrogen atoms are distributed around an interface between the first insulating oxide layer and the second insulating oxide layer, or distributed in the vicinity of the interface.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first and second gate electrode layers, an inter-layer insulating layer, a channel layer, a tunneling insulating layer, first and second charge storage portions, and a blocking insulating layer. The channel layer is separated from the first and second gate electrode layers, and the inter-layer insulating layer. The tunneling insulating layer is provided between the first gate electrode layer and the channel layer. The first charge storage portion is provided between the first gate electrode layer and the tunneling insulating layer. The second charge storage portion is provided the second gate electrode layer and the tunneling insulating layer. The blocking insulating layer is provided between the inter-layer insulating layer and the tunneling insulating layer, between the first gate electrode layer and the first charge storage portion, between the inter-layer insulating layer and the first charge storage portion.

Abstract: According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; and charge storage film. The stacked body includes the plurality of electrode layers separately stacked each other. The semiconductor body is provided in the stacked body and extends in a stack direction of the stacked body and includes an oxide semiconductor. The charge storage film is provided between the semiconductor body and the plurality of electrode layers.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a core film, and a stacked film. The stacked body includes a plurality of conductive layers stacked with an insulating layer between the conductive layers. The core film extends in the stacked body in a stacking direction of the stacked body, and includes a metal oxide film having a higher dielectric constant than a dielectric constant of silicon nitride. The stacked film includes a semiconductor film and charge storage film. The semiconductor film is provided between the conductive layers and the core film. The semiconductor film extends in the stacking direction. The charge storage film is provided between the conductive layers and the semiconductor film.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

Abstract: According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similally to the plurality of first memory cells.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; and charge storage film. The stacked body includes the plurality of electrode layers separately stacked each other. The semiconductor body is provided in the stacked body and extends in a stack direction of the stacked body and includes an oxide semiconductor. The charge storage film is provided between the semiconductor body and the plurality of electrode layers.

Abstract: According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon. Concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side has a maximum between the semiconductor layer and the floating gate layer, and the maximum being located nearer to the semiconductor layer side than to the floating gate layer side.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon. Concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side has a maximum between the semiconductor layer and the floating gate layer, and the maximum being located nearer to the semiconductor layer side than to the floating gate layer side.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similally to the plurality of first memory cells.