Abstract: Provided is a neutron shielding material having good light transparency and excellent shielding performance against thermal neutron rays, and a method for producing the same. A neutron shielding material according to the present invention includes a light transmitting material and a boron compound enriched in a boron isotope having a mass number of 10, the neutron shielding material being formed of a molded product having light transparency. Shielding performance against thermal neutron rays is improved by containing a boron compound enriched in a boron isotope having a mass number of 10. As a result, the neutron shielding material can be widely applied to members requiring visibility and neutron blocking properties.

Abstract: In a first transition period during which an operation mode transitions from a normal mode to a low power consumption mode, a VCOM generation unit in a power source IC changes a potential of a common electrode drive voltage VCOM from a potential of a first level (for example, 5 V) to a potential of a second level (for example, 12 V) so that a leakage current flowing through a pixel transistor is not generated during a pause period, a gate driver changes a potential of each gate bus line to 0 V, and a source driver changes a potential of each source bus line to 0 V.

Abstract: In a first transition period during which an operation mode transitions from a normal mode to a low power consumption mode, a source driver changes the potential of each source bus line to 0 V, a gate driver sets all gate bus lines to be in a high impedance state in a state where a gate low power source voltage VGL (a potential of a second level: for example, ?7 V) is applied to all of the gate bus lines, and a power source IC sets a common electrode and a VGL line to be in a high impedance state.

Abstract: A message transfer apparatus is provided which comprises: an acceptance unit that accepts a client ID identifying one of a plurality of clients, a transmitted message from the client to be transmitted to a terminal, and a terminal ID identifying the terminal, the plurality of clients each belonging to one of groups each identified by a group ID; a database in which a correspondence among the group ID, the client ID, a sender ID, and the terminal ID is registered and a plurality of the sender IDs are associated with one of a plurality of the group IDs; a database control unit that updates and searches the database; a transmission unit that transmits, to the terminal identified by the terminal ID, the transmitted message to which is attached one of the plurality of sender IDs in the database associated with the group ID corresponding to the client ID; a reception unit that receives a reply message from the terminal having received the transmitted message, the reply message being a message in which the sender ID

Abstract: This radiation analysis system comprises a transition edge sensor that detects radiation, a current detection mechanism that detects a current flowing in the transition edge sensor, and a computer sub-system that processes a current detection signal from the current detection mechanism. The computer sub-system is characterized by executing: a process for calculating a baseline current of the current detection signal; a process for calculating a wave height value of a signal pulse produced in the detection signal when the transition edge sensor has detected radiation; a process for acquiring correlation data based on the baseline current and the wave height value; and a process for correcting the wave height value of the signal pulse, or an energy value calculated from the wave height value, on the basis of the correlation data and the baseline current from before production of the signal pulse when radiation having unknown energy is detected.

Abstract: A pneumatic tire 1 includes a carcass 6 extending between bead cores of bead portions via a tread portion 2 and sidewall portions, and a belt layer 7 arranged on an outer side in a tire radial direction of the carcass 6 and inside the tread portion 2. The pneumatic tire 1 has a noise damper 20 arranged on an inner cavity surface of the tread portion 2. Glass transition temperature of the noise damper 20 is in a range of from ?55 degrees Celsius to ?45 degrees Celsius.

Abstract: A substrate processing apparatus includes a drying unit for replacing a liquid film formed on a substrate with a supercritical fluid to dry the substrate, and a control device. The drying unit includes a pressure container, a supply mechanism for supplying fluid to the pressure container, a discharge mechanism for discharging the fluid from the pressure container, a panel for separating an internal space from an external space, an electromagnetic lock, and a concentration sensor for detecting a concentration of the fluid. An unlocking condition for the control device to switch a state of the electromagnetic lock from a locked state to an unlocked state includes a condition that a detection value of the pressure sensor is less than or equal to a first threshold value and a condition that a detection value of the concentration sensor is less than or equal to a second threshold value.

Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Abstract: Processing chambers comprising a chamber body, a remote plasma source (RPS) outside the chamber body, a first connection line between the remote plasma source and the interior volume of the chamber body through the top wall and a second connection line between the remote plasma source and the interior volume through the sidewall of the chamber body. Methods of cleaning a processing chamber comprising flowing an etchant gas through the RPS into the chamber body, followed by a flow recovery gas through the RPS into the chamber body through both the first connection line and second connection line.

Abstract: To provide a radiation analyzer that can perform analyses by a long-term stable and high energy resolution without correcting a current flowing through a transition edge sensor (hereinafter referred to as TES) or a pulse height value of a signal pulse. The radiation analyzer includes: a TES 1 configured to detect radiation; a current detection mechanism 4 configured to detect a current flowing through the TES 1; a pulse height analyzer 5 configured to measure a pulse height value based on the current detected by the current detection mechanism 4; a baseline monitor mechanism 6 configured to detect a baseline current flowing through the TES 1; a first heater 13 whose output is adjusted to stabilize a temperature of a first thermometer 12 disposed in a cold head that cools the TES 1; and a second heater 14 that is disposed fairly close to the TES 1 and whose output is adjusted to stabilize a baseline current.

Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Abstract: This radiation analysis system comprises a transition edge sensor that detects radiation, a current detection mechanism that detects a current flowing in the transition edge sensor, and a computer sub-system that processes a current detection signal from the current detection mechanism. The computer sub-system is characterized by executing: a process for calculating a baseline current of the current detection signal; a process for calculating a wave height value of a signal pulse produced in the detection signal when the transition edge sensor has detected radiation; a process for acquiring correlation data based on the baseline current and the wave height value; and a process for correcting the wave height value of the signal pulse, or an energy value calculated from the wave height value, on the basis of the correlation data and the baseline current from before production of the signal pulse when radiation having unknown energy is detected by the transition edge sensor.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: A substrate processing apparatus includes a holder configured to hold, within a processing container, a substrate having a pattern formed of a resist material for EUV lithography on a surface thereof, a rotation driving part configured to rotate the holder, and a light source part including a plurality of light sources configured to emit light to the surface of the substrate held by the holder rotated by the rotation driving part such that a number of rotations of the substrate is 0.5 rpm to 3 rpm.

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

Abstract: A pickup request system includes: a determination unit configured to determine presence or absence of a package in a delivery box provided on a site of a building and whether or not a user is present in a first predetermined range including the building; and a control unit configured to request pickup of the package when it is determined that the user has moved from within the first predetermined range to out of the first predetermined range while the package is present in the delivery box.

Abstract: A voice control information output system includes: a voice control information obtainment unit that obtains voice control information for controlling a device based on a voice received by a voice input terminal, from a voice control system that outputs the voice control information; and an output unit that outputs display-related information for displaying a content related to the voice control information.

Abstract: A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.