Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Abstract: Processing chambers comprising a chamber body, a remote plasma source (RPS) outside the chamber body, a first connection line between the remote plasma source and the interior volume of the chamber body through the top wall and a second connection line between the remote plasma source and the interior volume through the sidewall of the chamber body. Methods of cleaning a processing chamber comprising flowing an etchant gas through the RPS into the chamber body, followed by a flow recovery gas through the RPS into the chamber body through both the first connection line and second connection line.

Abstract: To provide a radiation analyzer that can perform analyses by a long-term stable and high energy resolution without correcting a current flowing through a transition edge sensor (hereinafter referred to as TES) or a pulse height value of a signal pulse. The radiation analyzer includes: a TES 1 configured to detect radiation; a current detection mechanism 4 configured to detect a current flowing through the TES 1; a pulse height analyzer 5 configured to measure a pulse height value based on the current detected by the current detection mechanism 4; a baseline monitor mechanism 6 configured to detect a baseline current flowing through the TES 1; a first heater 13 whose output is adjusted to stabilize a temperature of a first thermometer 12 disposed in a cold head that cools the TES 1; and a second heater 14 that is disposed fairly close to the TES 1 and whose output is adjusted to stabilize a baseline current.

Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Abstract: This radiation analysis system comprises a transition edge sensor that detects radiation, a current detection mechanism that detects a current flowing in the transition edge sensor, and a computer sub-system that processes a current detection signal from the current detection mechanism. The computer sub-system is characterized by executing: a process for calculating a baseline current of the current detection signal; a process for calculating a wave height value of a signal pulse produced in the detection signal when the transition edge sensor has detected radiation; a process for acquiring correlation data based on the baseline current and the wave height value; and a process for correcting the wave height value of the signal pulse, or an energy value calculated from the wave height value, on the basis of the correlation data and the baseline current from before production of the signal pulse when radiation having unknown energy is detected by the transition edge sensor.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: A substrate processing apparatus includes a holder configured to hold, within a processing container, a substrate having a pattern formed of a resist material for EUV lithography on a surface thereof, a rotation driving part configured to rotate the holder, and a light source part including a plurality of light sources configured to emit light to the surface of the substrate held by the holder rotated by the rotation driving part such that a number of rotations of the substrate is 0.5 rpm to 3 rpm.

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

Abstract: A pickup request system includes: a determination unit configured to determine presence or absence of a package in a delivery box provided on a site of a building and whether or not a user is present in a first predetermined range including the building; and a control unit configured to request pickup of the package when it is determined that the user has moved from within the first predetermined range to out of the first predetermined range while the package is present in the delivery box.

Abstract: A voice control information output system includes: a voice control information obtainment unit that obtains voice control information for controlling a device based on a voice received by a voice input terminal, from a voice control system that outputs the voice control information; and an output unit that outputs display-related information for displaying a content related to the voice control information.

Abstract: A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.

Abstract: There is provided a substrate processing apparatus including: a holder configured to hold a substrate having a pattern formed with a resist material for ArF immersion lithography on a surface of the substrate inside a processing container; a rotation driver configured to rotate the holder; and a light source part having a plurality of light sources configured to irradiate the surface of the substrate held by the holder which is rotated by the rotation driver wherein the light sources include irradiating vacuum ultraviolet light, wherein an amount of irradiation of an inner side of the substrate with light from the light source part is made larger than an amount of irradiation of an outer side of the substrate with light from the light source part.

Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract: A control system includes a communication unit capable of communicating with a mobile terminal and a device disposed inside a predetermined area, a setting unit that sets, to an enabled state or a disabled state, a first notification function of notifying the mobile terminal of a state of the device using the communication unit, and a control unit that performs a predetermined control using the communication unit when the first notification function is set to the disabled state and the mobile terminal is determined to have moved from the inside of the predetermined area to the outside of the predetermined area.