Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: Provided are a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate and including each of an N-type semiconductor contact layer, an N-type DBR layer, an active layer, a P-type semiconductor DBR layer, and a P-type semiconductor contact layer; an anode electrode connected to the P-type semiconductor contact layer; and a cathode electrode formed on a surface side of the base substrate and connected to the N-type semiconductor contact layer. The N-type DBR layer is formed of 15 or more pairs of layers with different compositions laminated on each other. Through this configuration, a vertical-cavity surface-emitting laser that can suppress an occurrence of a defect caused by crystal missing arising from the base substrate can be provided at reduced cost.

Abstract: A vertical cavity surface emitting laser includes an active layer that includes a quantum well, a first cladding layer and a second cladding layer between which the active layer is interposed. A first multilayer reflector layer is arranged on a side of the first cladding layer opposite to that on which the active layer is arranged. A second multilayer reflector layer is arranged on a side of the second cladding layer opposite to that on which the active layer is arranged. At least one of the first cladding layer and the second cladding layer includes a low activity energy layer having a band gap that is smaller than a smallest band gap of an optical confinement layer for forming the quantum well of the active layer and larger than a band gap of the quantum well.

Abstract: A substrate processing method that is a method for removing a resist, the surface layer of which has been cured, from a substrate having a pattern disposed inside the resist and includes an SPM supplying step of supplying an SPM, formed by mixing sulfuric acid and a hydrogen peroxide solution, to the substrate and a liquid temperature increasing step of changing, in parallel to the SPM supplying step, a mixing ratio of the sulfuric acid and the hydrogen peroxide solution used to form the SPM to increase the liquid temperature of the SPM supplied to the substrate in the SPM supplying step.

Abstract: A substrate treatment method is provided, which includes a liquid film retaining step of retaining a liquid film of a treatment liquid on a major surface of a substrate, and a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the liquid film retaining step, wherein an output of the heater is changed from a previous output level in the heater heating step.

Abstract: A substrate treatment method is provided which includes: a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate; a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate; a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and a heat amount controlling step of controlling the amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to the rotation speed of the substrate in the heater heating step.

Abstract: A vertical cavity surface emitting laser includes a base substrate formed by a semi-insulating semiconductor, a light-emitting region multilayer portion including an N-type semiconductor contact layer, an N-type semiconductor multilayer-film reflecting layer, an N-type semiconductor clad layer, an active layer provided with a quantum well, a P-type semiconductor clad layer, a P-type semiconductor multilayer-film reflecting layer, and a P-type semiconductor contact layer, which are formed on the surface of the base substrate sequentially, an anode electrode formed on the surface of the P-type semiconductor contact layer, and a cathode electrode that is connected to the N-type semiconductor clad layer. The cathode electrode is formed on the base substrate at the side of the light-emitting region multilayer portion. A groove is formed among respective vertical cavity surface emitting lasers.

Abstract: A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A vertical cavity surface emitting laser includes an active layer that includes a quantum well, a first cladding layer and a second cladding layer between which the active layer is interposed. A first multilayer reflector layer is arranged on a side of the first cladding layer opposite to that on which the active layer is arranged. A second multilayer reflector layer is arranged on a side of the second cladding layer opposite to that on which the active layer is arranged. At least one of the first cladding layer and the second cladding layer includes a low activity energy layer having a band gap that is smaller than a smallest band gap of an optical confinement layer for forming the quantum well of the active layer and larger than a band gap of the quantum well.

Abstract: A resist film is formed on a cold-rolled steel sheet so as to fabricate a groove by etching. At this point, a steel sheet exposed portion where a portion of the steel sheet is exposed is formed in the resist film, and the steel sheet exposed portion has a first region oriented in a sheet width direction, and a plurality of second regions starting from the first region, widths of the first region and the second regions being 20 ?m to 100 ?m, and a distance from an end portion of one of the second regions to an end portion of another of the second regions adjacent thereto being 60 ?m to 570 ?m.

Abstract: A substrate treatment apparatus is provided which is used for removing a resist from a front surface of a substrate. The apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone/water mixture supplying unit which supplies a sulfuric acid ozone/water mixture to the front surface of the substrate held by the substrate holding unit, the sulfuric acid ozone/water mixture being a mixture which is prepared by mixing water with sulfuric acid ozone prepared by dissolving ozone gas in sulfuric acid.

Abstract: A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. The wafer heating apparatus comprises a plate-shaped member having two opposing principal surfaces with one of the principal surfaces serving as a mounting surface to mount a wafer thereon and the other principal surface having a band-shaped resistive heating member formed thereon, power feeder terminals connected to the resistive heating member for supplying electric power to the resistive heating member, a casing provided to cover the power feeder terminals on the other surface of the plate-shaped member and a nozzle of which tip faces the other surface of the plate-shaped member for cooling the plate-shaped member, wherein the position of the tip of the nozzle as projected onto the other surface of the plate-shaped member is located between the bands of the resistive heating member.

Abstract: A resist film is formed on a cold-rolled steel sheet so as to fabricate a groove by etching. At this point, a steel sheet exposed portion where a portion of the steel sheet is exposed is formed in the resist film, and the steel sheet exposed portion has a first region oriented in a sheet width direction, and a plurality of second regions starting from the first region, widths of the first region and the second regions being 20 ?m to 100 ?m, and a distance from an end portion of one of the second regions to an end portion of another of the second regions adjacent thereto being 60 ?m to 570 ?m.

Abstract: A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. The wafer heating apparatus comprises a plate-shaped member having two opposing principal surfaces with one of the principal surfaces serving as a mounting surface to mount a wafer thereon and the other principal surface having a band-shaped resistive heating member formed thereon, power feeder terminals connected to the resistive heating member for supplying electric power to the resistive heating member, a casing provided to cover the power feeder terminals on the other surface of the plate-shaped member and a nozzle of which tip faces the other surface of the plate-shaped member for cooling the plate-shaped member, wherein the position of the tip of the nozzle as projected onto the other surface of the plate-shaped member is located between the bands of the resistive heating member.

Abstract: A grain-oriented electrical steel plate is characterized in that grooves having a width of 10 ?m to 200 ?m and a depth of 10 ?m to 30 ?m exist in at least one of a front surface and a rear surface of a steel plate at intervals of 1 mm to 10 mm, an angle between a direction in which the grooves extend and a rolling direction of the steel plate is 60 degrees to 120 degrees, and tensile stresses having a maximum value of 20 MPa to 300 MPa act in the rolling direction within ranges of 10 ?m to 300 ?m from side surfaces of the grooves.

Abstract: A grain-oriented electrical steel plate is characterized in that grooves having a width of 10 ?m to 200 ?m and a depth of 10 ?m to 30 ?m exist in at least one of a front surface and a rear surface of a steel plate at intervals of 1 mm to 10 mm, an angle between a direction in which the grooves extend and a rolling direction of the steel plate is 60 degrees to 120 degrees, and tensile stresses having a maximum value of 20 MPa to 300 MPa act in the rolling direction within ranges of 10 ?m to 300 ?m from side surfaces of the grooves.

Abstract: A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. The wafer heating apparatus comprises a plate-shaped member having two opposing principal surfaces with one of the principal surfaces serving as a mounting surface to mount a wafer thereon and the other principal surface having a band-shaped resistive heating member formed thereon, power feeder terminals connected to the resistive heating member for supplying electric power to the resistive heating member, a casing provided to cover the power feeder terminals on the other surface of the plate-shaped member and a nozzle of which tip faces the other surface of the plate-shaped member for cooling the plate-shaped member, wherein the position of the tip of the nozzle as projected onto the other surface of the plate-shaped member is located between the bands of the resistive heating member.

Abstract: The present invention provides grain-oriented electrical sheet more superior in watt loss compared with the past by dividing the watt loss of grain-oriented electrical sheet introducing strain by firing of a laser beam etc. into hysteresis loss and eddy current loss and, in particular from the viewpoint of the eddy current loss, quantitatively suitably controlling the distribution of the strain and residual stress in the sheet thickness direction, that is, grain-oriented electrical sheet obtained by firing a laser beam etc.