Abstract: [Object] To provide a semiconductor device with which an increase in on-resistance can be suppressed even if a voltage is continuously applied for a long period of time across a source and a drain in a gate-off state. [Solution Means] A semiconductor device 1 includes a substrate 7 made of an n+ type SiC and having a predetermined off-angle, a drift layer 8 made of an n? type SiC and formed on the substrate 7, a plurality of unit cells 10 demarcated in the drift layer 8 by n? type epitaxial lines 13 including first lines 11 parallel to an off-direction of the substrate 7 and second lines 12 intersecting the first lines 11, a gate insulating film 17 formed on the drift layer 8, a gate electrode 18 formed on the gate insulating film 17, and a p? type relaxation layer 24 formed in the first lines 11 in the drift layer 8 and relaxing an electric field generated in the gate insulating film 17.

Abstract: An inspection management apparatus includes: a schedule generation unit that, based on a scheduled start date and time of examination, a scheduled start date and time of observation, a predictive transfer time of image data from a receiving device to an inspection management apparatus, and a predictive image processing time for each type of image processing, calculates an image transfer start date and time from the receiving device to the inspection management apparatus, and calculates an image processing start date and time of the transferred image data; and a control unit that starts acquisition of the image data transmitted from the receiving device when the image transfer start date and time comes, and causes, when the image processing start date and time comes, an image processing unit to perform specified image processing on the image data that the transfer has been started on the image transfer start date and time.

Abstract: An image forming apparatus according to one aspect of the present disclosure includes an apparatus body, a document sheet feed apparatus, a wiring cord, a guide portion, and a wiring cord cover. The apparatus body includes a document sheet reading portion therein. The document sheet feed apparatus is configured to be openable and closable relative to a document sheet placing surface of the apparatus body. The wiring cord is configured to electrically connect between the apparatus body and the document sheet feed apparatus. The guide portion is configured to surround the wiring cord. The wiring cord cover is mounted detachably to the apparatus body in a state where the wiring cord cover has the wiring cord disposed therein.

Abstract: A sheet post-processing apparatus according to one aspect of the present disclosure includes a switching member, a stapler, and a movement driving portion. The switching member switches the conveying direction of a sheet introduced from an image forming apparatus. The stapler staples a bundle of sheets obtained by performing stacking processing for a plurality of the sheets introduced from the image forming apparatus. The movement driving portion moves the stapler. Further, the stapler operates the switching member by being moved by the movement driving portion, thereby switching the conveying direction of the sheet.

Abstract: An image forming system includes an image forming apparatus, a post-processing apparatus, a fixed member, a first connector, a connecting member, and a second connector. The mage forming apparatus includes the fixed member on which the first connector is mounted and the post-processing apparatus includes connecting member on which the second connector is mounted. The connecting member is movable in a front-back direction and configured so as to be displaced between an engaging position in which the connecting member is engaged with the fixed member and a disengaging position in which the connecting member is disengaged from the fixed member. The first connector and the second connector are disconnected from each other when the connecting member is set to the disengaging position, and connected to each other when the connecting member is set to the engaging position.

Abstract: Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21).

Abstract: A sheet post-processing apparatus is provided that includes a first delivery path that guides a sheet to a first post-processing portion, a delivery holding path having a first holding path which branches off from a branch point of the first delivery path and a second holding path which is formed to be continuous with the first holding path and joins together with the first delivery path; a second delivery path that branches off from a branch point of the first holding path and guides the sheet to the second post-processing portion; a first path switching portion that is provided at the branch point of the first delivery path; and a second path switching portion that is provided at the branch point of the first holding path.

Abstract: A sheet post-processing apparatus according to one aspect of the present disclosure includes a switching member, a stapler, and a movement driving portion. The switching member switches the conveying direction of a sheet introduced from an image forming apparatus. The stapler staples a bundle of sheets obtained by performing stacking processing for a plurality of the sheets introduced from the image forming apparatus. The movement driving portion moves the stapler. Further, the stapler operates the switching member by being moved by the movement driving portion, thereby switching the conveying direction of the sheet.

Abstract: A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer.

Abstract: A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion.

Abstract: The laminated high melting point soldering layer includes: a laminated structure which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer and a high melting point metal thin film layers disposed on a surface and a back side surface of the low melting point metal thin film layer; a first high melting point metal layer disposed on the surface of the laminated structure; and a second high melting point metal layer disposed on the back side surface of the laminated structure. The low melting point metal thin film layer and the high melting point metal thin film layer are mutually alloyed by TLP, and the laminated structure, and the first high melting point metal layer and the second high melting point metal layer are mutually alloyed by the TLP bonding.

Abstract: A semiconductor device (1) includes an n type epitaxial layer (8), body regions (12) formed in the surface layer part of the n type epitaxial layer (8), n type source regions (16) formed in the surface layer parts of the body regions (12), a gate insulating film (19) formed on the n type epitaxial layer (8), and a gate protection diode (30) and gate electrodes (20) formed on the gate insulating film (19). The gate protection diode (30) includes a first p type region (31), an n type region (32), and a second p type region (33). A first diode (30A) is formed of the first p type region (31) and the n type region (32). A second diode (30B) is formed of the n type region (32) and the second p type region (33). The first p type region (31) is connected to the gate electrode (20). The second p type region (33) is connected to a source electrode (27).

Abstract: An electronic circuit includes a bipolar device, a unipolar device connected in parallel to the bipolar device, and an output line connected to the bipolar device and to the unipolar device. An inductance between the unipolar device and the output line is smaller than an inductance between the bipolar device and the output line.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film.

Abstract: The laminated high melting point soldering layer includes: a laminated structure which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer and a high melting point metal thin film layers disposed on a surface and a back side surface of the low melting point metal thin film layer; a first high melting point metal layer disposed on the surface of the laminated structure; and a second high melting point metal layer disposed on the back side surface of the laminated structure. The low melting point metal thin film layer and the high melting point metal thin film layer are mutually alloyed by TLP, and the laminated structure, and the first high melting point metal layer and the second high melting point metal layer are mutually alloyed by the TLP bonding.

Abstract: A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Abstract: A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Abstract: A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer.

Abstract: A sheet feeding device has: a sheet accommodating portion that accommodates a sheet stack of a plurality of sheets; a sheet carrying plate that is provided within the sheet accommodating portion and stacks the sheet stack thereon; a pickup roller that contacts an upper face of the sheet stack and dispatches a sheet on an uppermost layer of the sheet stack, an elevator mechanism that displaces the sheet carrying plate between a sheet feeding position in which the upper face of the sheet stack contacts the pickup roller, and a separating position in which the upper face of the sheet stack separates from the pickup roller by a predetermined distance; and a controller that controls an operation of the elevator mechanism such that the sheet carrying plate is lowered to the separating position after a sheet feeding operation for feeding a sheet at the sheet feeding position is completed.

Abstract: A sheet post-processing apparatus is provided that includes a first delivery path that guides a sheet to a first post-processing portion, a delivery holding path having a first holding path which branches off from a branch point of the first delivery path and a second holding path which is formed to be continuous with the first holding path and joins together with the first delivery path; a second delivery path that branches off from a branch point of the first holding path and guides the sheet to the second post-processing portion; a first path switching portion that is provided at the branch point of the first delivery path; and a second path switching portion that is provided at the branch point of the first holding path.