Abstract: A medical image diagnosis apparatus designates an imaging range of a subject from a projection image for designation of the imaging range, specifies a specific spot on the projection image, performs scanning for generating a three-dimensional medical image of the subject on the basis of the imaging range, finds out a three-dimensional target region from the three-dimensional medical image on the basis of the specific spot, and detects a candidate for an abnormal part in the three-dimensional target region.

Abstract: There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): ?O—Ar1???Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): ?O—Ar2—O—Ar3-T-Ar4???Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

Abstract: A tire 18 includes: a tread 20 having a plurality of main grooves 38a that extend in a circumferential direction; a band 30 located inwardly of the tread 20 in a radial direction; and a belt 28 located inwardly of the band 30 in the radial direction. None of the plurality of main grooves 38a is formed on a tire equator. The band 30 is formed by using a first ribbon 52a and a second ribbon 52b. A main groove closest to the tire equator among the plurality of main grooves 38a is used as a reference main groove 38as. The first ribbon 52a and the second ribbon 52b are layered over the belt 28 such that an end 62a of the first ribbon 52a and an end 62b of the second ribbon 52b are located vertically below the reference main groove 38as.

Abstract: A microcomputer includes a flash memory and a flash controller that controls access to the flash memory, the flash memory including a protection information storage section that stores protection information, the protection information indicating whether or not access to a given area of the flash memory is available; the flash controller including a flash protection section that performs a protection process relating to access to a given area of the flash memory based on the protection information; and the flash protection section performing the protection process relating to access to the flash memory when an access target is data.

Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

Abstract: There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

Abstract: A device including a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a reaction product of a transition metal complex or complexes, and wherein at least one or more kinds of transition metals selected from the group consisting of vanadium, rhenium and platinum, or a mixture of molybdenum and one or more kinds of transition metals selected from the group consisting of vanadium, rhenium and platinum is contained in a central metal or metals of the transition metal complex or complexes.

Abstract: There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: An integrated circuit device generates drive waveforms which can be adapted to a plurality of panels by a function of setting a repetition period, the function setting which of periods in a drive waveform pattern is to be repeated, and a function of setting the number of times, the function setting what number of times the set period is to be repeated.

Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

Abstract: A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

Abstract: It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.

Abstract: An integrated circuit device includes: a driving voltage output unit that outputs a driving voltage supplied to a segment electrode of an electro-optical panel; a display data storage unit that stores display data; and a driving waveform information output unit that outputs driving waveform information when a display state of the segment electrode is changed from a first display state corresponding to first display data to a second display state corresponding to second display data, wherein the driving voltage output unit outputs the driving voltage specified by the first display data and the second display data from the display data storage unit, and the driving waveform information from the driving waveform information output unit.

Abstract: A device having an easy production process and capable of achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer contains a reaction product of a molybdenum complex or tungsten complex.

Abstract: A method of introducing an ultrasonic drug includes irradiating a low frequency sound wave onto a subject, irradiating a high frequency ultrasonic wave onto a target region of the subject, and introducing the drug into the target region.

Abstract: There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

Abstract: A clock switching circuit includes: a selector that selects one of a plurality of clocks based on a select signal and outputs the clock selected as a selected clock; a mask circuit that masks the selected clock based on a mask signal and outputs the selected clock masked as an output clock; and a mask signal generation circuit that generates the mask signal and the select signal, the mask signal generation circuit switches a signal level of the select signal after causing the mask signal to be active, and causes the mask signal to be inactive on condition that a change is detected in the signal level of the selected clock after the signal level of the select signal has been switched.

Abstract: There is provided a process for producing an EL element by photolithography, which process can produce an EL element having improved luminescence efficiency. The production process comprises the steps of removing a photoresist from photoresist layer-covered parts of an electroluminescent layer and cleaning the surface of the electroluminescent layer parts from which the photoresist has been removed.

Abstract: There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.