Abstract: A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.

Abstract: A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate including silicon, forming first sidewalls of a first material on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a material layer over the mesa, planarizing the material layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the material layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

Abstract: A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.

Abstract: A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.

Abstract: A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer under the first metal contact, conformally depositing a dielectric layer on a vertical side of the first metal contact, a vertical side of the emitter semiconductor layer and on the base layer, anisotropically etching the dielectric layer off of the semiconductor substrate to form a dielectric sidewall spacer on the vertical side of the first metal contact and providing a second metal contact immediately adjacent the dielectric sidewall spacer.

Abstract: There is provided a waterproof hearing aid capable of being worn without caring about the entry of sweat or water even at the time of sweating or bathing. The waterproof hearing aid has a first waterproof film stretchingly provided at the sound inlet of a microphone and a second waterproof film stretchingly provided at the sound outlet of an earphone, a tube (first vent) communicating a microphone chamber formed by the first waterproof film and the microphone with a hearing aid case chamber formed by a hearing aid case, a tube (second vent) communicating an earphone chamber formed by the second waterproof film and the earphone with the hearing aid case chamber, and a porous film (third vent) communicating the hearing aid case chamber with the outside.

Abstract: There is provided a waterproof hearing aid capable of being worn without caring about the entry of sweat or water even at the time of sweating or bathing. The waterproof hearing aid has a first waterproof film stretchingly provided at the sound inlet of a microphone and a second waterproof film stretchingly provided at the sound outlet of an earphone, a tube (first vent) communicating a microphone chamber formed by the first waterproof film and the microphone with a hearing aid case chamber formed by a hearing aid case, a tube (second vent) communicating an earphone chamber formed by the second waterproof film and the earphone with the hearing aid case chamber, and a porous film (third vent) communicating the hearing aid case chamber with the outside.

Abstract: A polycarbonate copolymer which consists essentially of 5 to 95 mol % of recurring units containing a specific spiroglycol unit and 95 to 5 mol % of recurring units containing a specific biphenol unit, and has a reduced viscosity (.eta..sub.sp /c), measured at 20.degree. C. in a solution containing methylene chloride as a solvent and having a concentration of 0.5 g/dl, of at least 0.3 dl/g, a photoelasticity coefficient of 70.times.10.sup.-13 cm.sup.2 /dyne or less, and a glass transition temperature of at least 95.degree. C.; and a process for the production thereof. This polycarbonate copolymer is useful as a material for an information transmission medium or an information recording medium.