Abstract: An electrical or electronic circuit having at least one variable capacitor device connected in parallel relationship in the circuit by at least a pair of electrodes. The improvement constitutes the capacitor device being in the form of a silicon dioxide film derived from the oxidation of a hydrogen silsequioxane resin. The silicon dioxide film is characterized by a non-linear substantially symmetrical jV curve which includes a threshold voltage at which the silicon dioxide film undergoes a reversible transition from insulating to conducting. The jV curve further includes a regime of negative differential resistance in which an increase in the voltage applied to the silicon dioxide film above the threshold voltage causes a decrease of the current.

Abstract: A single or multilayer ceramic or ceramic-like coating process is provided which can be applied to heat sensitive substrates such as electronic devices. The process includes the steps of coating the substrate with a solution comprising a hydrogen silsesquioxane resin diluted in a solvent and then evaporating the solvent, thereby depositing a preceramic coating on the substrate. The preceramic coating is then ceramified to a silicon dioxide-containing ceramic by heating the preceramic coating to a temperature of between about 40.degree. to about 400.degree. C. in the presence of ozone which enhances the rate at which the ceramification proceeds and permits the ceramification of the coating to proceed at low temperatures. Additional layers of ceramic materials may be deposited over the initial layer and act as passivating and/or barrier protective layers.

Abstract: Disclosed is a method for forming improved Si--O containing coatings on electronic substrate. The method comprises converting hydrogen silsesquioxane resin into a Si--O containing ceramic coating in the presence of hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.

Abstract: This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.

Abstract: A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.

Abstract: This invention relates to a method of forming a ceramic coating on a substrate. The method comprises coating the substrate with a solution comprising a solvent and a silica precursor followed by evaporating the solvent to form a preceramic coating. The preceramic coating is then exposed to an environment comprising ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added to facilitate conversion of the silica precursor to the ceramic coating. The preceramic coating is then subjected to a temperature sufficient to facilitate conversion of said preceramic coating to a ceramic coating.

Abstract: This invention relates to a method of forming amorphous silicon hermetic coatings on light conducting devices, including optical fibers, wave guides, light pipes, or cables. By the present invention, a halosilane, halodisilane or mixture of halosilanes is thermally decomposed in the vapor phase in the presence of a light conducting device to produce an amorphous silicon hermetic coating on the light conducting device.

Abstract: The present invention relates to a method of forming patterned coatings on substrates, especially electronic devices, by negative resist techniques. The method comprises applying a preceramic coating comprising hydrogen silsesquioxane resin and an initiator onto the substrate and then radiating a selected region of the coating for a time sufficient to cure the resin. The uncured coating is then rinsed away leaving the patterned coating.

Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a preceramic mixture of a partially hydrolyzed silicate ester and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: Mixtures of hydrogen silsesquioxane resin and metal oxide precursors such as acyloxy and alkoxy compounds of aluminum, zirconium, and titanium can be coated on substrates and subsequently ceramified at low temperature in the presence of ammonia, with or without platinum or rhodium catalysis, to form a nitrided ceramic coating on the surface of the substrate. The nitrided coatings produced are useful as interlevel dielectric films or for planarizing and protecting the surface of electronic devices. For further surface protection, overcoating the nitrided coating with an additional layer of a passivating ceramic material and a top layer of a barrier ceramic material is also described.

Abstract: Hydrogen silsesquioxane resin can be ceramified at low temperature in the presence of ammonia, with or without platinum or rhodium catalysis, to form a ceramic coating on the surface of a substrate. The nitrified silica coatings produced are useful as interlevel dielectric films or for planarizing and protecting the surface of electronic devices. For further surface protection, overcoating the nitrided silica with an additional layer of a passivating ceramic material and a top layer of a barrier ceramic material is also described.

Abstract: Hydrolyzed or partially hydrolyzed mixtures of silicate esters and metal oxide precursors, are pyrolyzed at relatively low temperature in the presence of ammonia to form ceramic coatings on substrates such as electronic devices. The metal oxide precursors are soluble compounds, for example alkoxides, of aluminum, titanium, or zirconium. The coatings produced are useful for the protection of electronic devices. One or more coatings containing amorphous silicon, silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the nitrided ceramic SiO.sub.2 /metal oxide coating for still further protection of electronic devices.

Abstract: A method of forming at low temperatures silicon- and nitrogen-containing ceramic or ceramic-like coatings for the protection of electronic devices. The coatings are produced by the ceramification at temperatures of, or below, 400 degrees Centigrade of preceramic silicon nitrogen-containing polymer coatings deposited from a solvent solution. The coatings are useful for planarizing the surfaces of electronic devices and for passivation.

Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a preceramic mixture of a hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a hydrogen silsesquioxane resin solvent solution which is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: This invention relates to materials produced by diluting in a solvent a preceramic mixture of a partially hydrolyzed silicate ester and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.