Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.

Abstract: A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.

Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

Abstract: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming transistor fins of differing heights to obtain a performance improvement for a given type of integrated circuit within the microelectronic device.

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming an opening in a masking layer, implanting an amorphizing species into a silicon region disposed within the opening, wherein the silicon region comprises a portion of an emitter of a bipolar transistor; and forming a silicide layer on the silicon region.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming an opening in a masking layer, implanting an amorphizing species into a silicon region disposed within the opening, wherein the silicon region comprises a portion of an emitter of a bipolar transistor; and forming a silicide layer on the silicon region.

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract: Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.

Abstract: The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100>direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract: The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.

Abstract: The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.

Abstract: In a slab laser, the optical pumping lamps extend transversely to the mean direction of the laser beam with the spatial period of the lamps being harmonically related to the spatial period of the zig-zag laser beam path within the slab, preferably with equal periods. In addition, the lamps are preferably positioned in registration over the lines of intersection of the central ray of the laser beam with respective broad face of the laser slab. A planar flashlamp reflector is employed for economy of fabrication. Directional lamp reflectors are employed for increasing laser efficiency and performance by discriminating against amplified surface waves.

Abstract: In a high average power slab laser, heat generated in the laser slab is conducted through a thin layer of thermally conductive gas, such as hydrogen, helium or air, and then through an optically transparent window into a flow of liquid coolant. In a preferred embodiment, a second flow of liquid coolant is employed for cooling of the pumping lamps such lamp liquid coolant flow being partitioned from the slab liquid coolant flow by means of an optically transparent partition through which the pump radiation is directed from the lamps to the slab. In another embodiment, the slab coolant flow is controlled so as to operate the laser slab in a self-annealing temperature regime, whereby thermal stresses are annealed out in use and higher average output beam power is obtained.