Abstract: According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

Abstract: An interference optical system unit includes at least one electromagnetic lens that forms an image of a charged particle beam, at least one charged particle beam biprism, and a support member for the electromagnetic lens and the charged particle beam biprism. The electromagnetic lens, the charged particle beam biprism, the support member, and a space to an image plane of the electromagnetic lens are integrally configured as one unit. The interference optical system unit is disposed to have an optical axis coaxialized with an optical axis of an imaging optical system of an upstream stage that is disposed on an upstream side of the unit in a flow direction of the charged particle beam. A focal length of the electromagnetic lens and a deflection angle of the charged particle beam given by the charged particle beam biprism are controlled to generate an interference fringe of the charged particle beam on the image plane of the electromagnetic lens.

Abstract: The density difference of particle beam irradiation with two optical statuses is produced utilizing a diffraction effect, within the same field of vision, such that a diffraction grating manufactured with a material which passes through a particle beam is provided on the upper side of a specimen and on the lower side of the irradiation optical system. Further, a region wider than the opening region of the diffraction grating is irradiated with the particle beam to produce the density difference of the particle beam emitted to the specimen , by superposing the particle beam, Bragg-diffracted with the opening region , and the particle beam, transmitted through the outer peripheral part of the opening region without being diffracted, with each other, and emitting the beam to the specimen .

Abstract: An electron microscope for observation by illuminating an electron beam on a specimen, includes: an edge element disposed in a diffraction plane where a direct beam not diffracted by but transmitted through the specimen converges or a plane equivalent to the diffraction plane; and a control unit for controlling the electron beam or the edge element. The edge element includes a blocking portion for blocking the electron beam, and an aperture for allowing the passage of the electron beam. The aperture is defined by an edge of the blocking portion in a manner that the edge surrounds a convergence point of the direct beam in the diffraction plane. The control unit varies contrast of an observation image by shifting, relative to the edge, the convergence point of the direct beam along the edge while maintaining a predetermined distance between the convergence point of the direct beam and the edge.

Abstract: The outer shape and size of a diffraction grating including an edge dislocation is made smaller than the irradiation areas of light waves and electromagnetic waves, by using an opener different from in the diffraction grating, the shape and size of the opening is superposed on the shape of a spiral wave that is generated by an edge dislocation diffraction grating, and the shape and size of the opening are reflected in the shape and size of the spiral wave on the diffractive surface. In addition, not only a diffraction grating system including a pair of a single opener and a single diffraction grating, but also a diffraction grating system in which plural openers and plural edge dislocation diffraction gratings are combined are used, and plural spiral waves can be generated on the diffractive surface with a higher degree of freedom.

Abstract: An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)? to (4)?: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)? an inorganic alkali; (2)? a carboxyl group-containing chelating agent; (3)? an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)? water.

Abstract: Although, conventionally, there were two methods, (1) a wave was transmitted through a spiral phase plate and (2) a diffraction grating containing an edge dislocation was used, they incurred complication of a configuration and securement of a larger amount of space and were not efficient because each of the spiral wave generation methods needed an incident wave to be a plane wave and at least one time of imaging is necessary at the time of wave irradiation on an observation object. In order to efficiently generate the spiral wave having a sufficient intensity, a structure of edge dislocation is taken in into a pattern of the zone plate and a spiral pattern containing a discontinuous zone is formed. Moreover, a thickness and a quality of material that change the phase of the wave by an odd multiple of ? are selected for a material of the wave-blocking section in the pattern.

Abstract: The outer shape and size of a diffraction grating including an edge dislocation is made smaller than the irradiation areas of light waves and electromagnetic waves, by using an opener different from in the diffraction grating, the shape and size of the opening is superposed on the shape of a spiral wave that is generated by an edge dislocation diffraction grating, and the shape and size of the opening are reflected in the shape and size of the spiral wave on the diffractive surface. In addition, not only a diffraction grating system including a pair of a single opener and a single diffraction grating, but also a diffraction grating system in which plural openers and plural edge dislocation diffraction gratings are combined are used, and plural spiral waves can be generated on the diffractive surface with a higher degree of freedom.

Abstract: The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.

Abstract: The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.

Abstract: The invention relates to a cleaning liquid for semiconductor device substrates comprising the following components (A) to (D) and a method of cleaning semiconductor device substrates: (A) at least either one of a polycarboxylic acid and a hydroxycarboxylic acid; (B) a sulfonic acid type anionic surfactant; (C) a carboxylic acid type anionic surfactant; and (D) water.

Abstract: There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.

Abstract: An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)? to (4)?: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)? an inorganic alkali; (2)? a carboxyl group-containing chelating agent; (3)? an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)? water.

Abstract: There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.

Abstract: Although, conventionally, there were two methods, (1) a wave was transmitted through a spiral phase plate and (2) a diffraction grating containing an edge dislocation was used, they incurred complication of a configuration and securement of a larger amount of space and were not efficient because each of the spiral wave generation methods needed an incident wave to be a plane wave and at least one time of imaging is necessary at the time of wave irradiation on an observation object. In order to efficiently generate the spiral wave having a sufficient intensity, a structure of edge dislocation is taken in into a pattern of the zone plate and a spiral pattern containing a discontinuous zone is formed. Moreover, a thickness and a quality of material that change the phase of the wave by an odd multiple of ? are selected for a material of the wave-blocking section in the pattern.

Abstract: In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism.

Abstract: The Foucault mode which is one method in Lorentz electron microscopy is required making a plurality of observations such as when reselecting the deflection components of the electron beam to form an image. This method not only required making plurality of adjustments to the optical system but was also incapable of making dynamic observations and real-time observations at different timings even if information on the entire irradiation region was obtained. The present invention irradiates a single electron beam onto the sample, and by utilizing an electron biprism placed such as on an angular space on the electron optics, applies a deflection in the travel direction of each electron beam, and forms the sample image by individually and simultaneously forming images from each of electron beams at different positions on the image surface of the electron optical system.

Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on an objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.

Abstract: The present invention is based on the property that the electric and magnetic fields are independent of each other and normal to each other and the property that the deflection of a charged particle beam by the electromagnetic field follows the rule of linear combination. The present invention employs a system that creates a region in which there exist both electromagnetic field and controls the deflection of a charged particle beam in each of the electric and magnetic fields.

Abstract: In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism.