Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region of those electron beams is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane of the objective lens system having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.

Abstract: A laminated body manufacturing apparatus for manufacturing an annular laminated body in which each layer is defined by a plurality of segments is provided with a feeding unit that sequentially feeds a plurality of parts to be processed on a band-like sheet material to a predetermined processing position; a processing unit that separates the segment from each part to be processed by a shearing processing in the processing position; and a laminating unit that receives the segment that is separated and lowered onto the plurality of segments that are lowered and defining one layer in advance and that rotates the received segment by a predetermined angle in a circumferential direction of the segment, each time when the shearing processing is performed, so as to place the sequentially lowered segment in a position to define the laminated body.

Abstract: Disclosed are an electron beam biprism device and an electron beam device, in which, in order to implement a fringe scan method in an electron beam interferometer, a deflection function in one direction is added to the function of an electron beam biprism, and electron beams passing the left and right sides of a filament electrode can be respectively deflected at different angles.

Abstract: A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is/are produced and displayed on a display device.

Abstract: In a flat plate type thick film resistor, an insulation performance is improved by excluding the nonuniformity of potential distribution on a wiring plane, which is generated when electric current flows in a resistance wire. Simultaneously, generation of noise depending on potential distribution and variation of stray capacitance around a resistor is suppressed. When the resistance wire having a constant thickness and uniform resistivity, which is formed on an insulating substrate, is connected to a pair electrode conductors that face to each other, in the way that the resistance wire is repetitively bent to the alternate side in zigzags, a potential gradient on the wiring plane, which is generated when electric current flows in the resistance wire, is constant by properly selecting the line width, the bending angle, and the spacing between bending vertexes of a resistance wire.

Abstract: An electron beam observation device includes a mechanism which disposes a specimen at an upstream side in an electron beam traveling direction outside an objective lens, from which an image is transferred under a magnification of ? to 1/30, in addition to an inside of the objective lens in which a specimen is disposed at a time of ordinary observation.

Abstract: A multi-biprism electron interferometer is configured so as to arrange a plurality of biprisms in an imaging optical system of a specimen. An upper electron biprism is arranged upstream of the specimen in the traveling direction of the electron beam, and an image of the electron biprism is formed on the specimen (object plane) using an imaging action of a pre-field of the objective lens. A double-biprism interference optical system is constructed of a lower electron biprism disposed downstream of the objective lens up to the first image plane of the specimen.

Abstract: The present invention is based on the property that the electric and magnetic fields are independent of each other and normal to each other and the property that the deflection of a charged particle beam by the electromagnetic field follows the rule of linear combination. The present invention employs a system that creates a region in which there exist both electromagnetic field and controls the deflection of a charged particle beam in each of the electric and magnetic fields.

Abstract: A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is/are produced and displayed on a display device.

Abstract: A double-biprism electron interferometer is an optical system which dramatically increases the degree of freedom of a conventional one-stage electron interferometer. The double biprism interferometer, however, is the same as the optical system of the single electron biprism in terms of the one-dimensional shape of an electron hologram formed by filament electrodes, the direction of an interference area, and the azimuth of the interference fringes. In other words, the longitudinal direction of the interference area is determined corresponding to the direction of the filament electrodes, and the azimuth of the interference fringes only coincides with and is in parallel with the longitudinal direction of the interference area.

Abstract: In an electron beam interference system using an electron biprism, which is capable of independently controlling each of the interference fringe spacing s and the interference width W, both of which are important parameters for an interferometer and for an interferogram acquired by the interferometer, an optical system used in a two-stage electron biprism interferometer is adopted. The optical system uses two stages of electron biprisms in an optical axis direction to give the flexibility to the relative magnification relative to a specimen image and that relative to an image of a filament electrode of the electron biprism. In addition, as a two-stage configuration in which two objective lenses (51, 52) are combined, independently controlling the focal length of each objective lens makes it possible to set the relative magnification relative to a specimen image and that relative to an image of the filament electrode of the electron biprism at arbitrary values.

Abstract: The magnetization state of a ferromagnetic material is controlled by applying a current pulse to it while externally applying a weak magnetic field to it. The magnetic state of a ferromagnetic material can be switched between a uniformly magnetized state and a multiple magnetic domain structure by controlling the direction and intensity of the magnetic field applied to it and the intensity and pulse width of the current pulse. When an external magnetic field is applied, the possibility of occurrence of the reversal of the magnetic state upon application of the current pulse shows a hysteresis, and the reversal of the magnetic state can be controlled reliably. The intensity of the magnetic field to be applied may be as weak as a few gauss. Furthermore, by using such magnetic information recording elements, a magnetic information recording device (memory) that can achieve a high degree of integration can be produced.

Abstract: An interferometer is disclosed which has upper-stage, intermediate-stage, and lower-stage electron biprisms. The disclosed interferometer operates with an azimuth angle ? among filament electrodes of the three electron biprisms to arbitrarily control an interference area and an azimuth ? of the interference fringes formed therein, eliminates Fresnel fringes generation, and allows independent control of an interference fringe spacing s and the azimuth ? of the interference fringes.

Abstract: Charged particle beam equipment having a rotary mechanism in which shift of the observing/machining position incident to the rotary operation of the equipment having the rotary mechanism can be corrected conveniently with high precision in a plane perpendicular to the optical axis of the optical system of charged particle beam or in a slightly inclining plane. An X-Y shift incident to rotation in a plane is determined from the angular information of a rotary mechanism such as a sample holder, diaphragms or biprisms in the charged particle beam equipment, and then driving or controlling is performed to cancel the X-Y shift.

Abstract: A double-biprism electron interferometer is an optical system which dramatically increases the degree of freedom of a conventional one-stage electron interferometer. The double biprism interferometer, however, is the same as the optical system of the single electron biprism in terms of the one-dimensional shape of an electron hologram formed by filament electrodes, the direction of an interference area, and the azimuth of the interference fringes. In other words, the longitudinal direction of the interference area is determined corresponding to the direction of the filament electrodes, and the azimuth of the interference fringes only coincides with and is in parallel with the longitudinal direction of the interference area.

Abstract: An electron beam observation device includes a mechanism which disposes a specimen at an upstream side in an electron beam traveling direction outside an objective lens, from which an image is transferred under a magnification of ? to 1/30, in addition to an inside of the objective lens in which a specimen is disposed at a time of ordinary observation.

Abstract: A multi-biprism electron interferometer is configured so as to arrange a plurality of biprisms in an imaging optical system of a specimen. This generally requires a plurality of ports for the electron biprisms in a magnifying optical system from an objective lens onward and also requires electromagnetic lenses, which are combined with the respective electron biprisms and operated in association therewith, to provide the interference optical system with a degree of freedom. As a result, not only the electron biprism ports but also electromagnetic lenses need to be additionally configured in the imaging optical system of a conventional electron microscope so as to display the performance as the multi-biprism electron interferometer. The present invention arranges an upper electron biprism upstream of the specimen in the traveling direction of the electron beam and forms an image of the electron biprism on the specimen (object plane) using an imaging action of a pre-field of the objective lens.

Abstract: In a flat plate type thick film resistor, an insulation performance is improved by excluding the nonuniformity of potential distribution on a wiring plane, which is generated when electric current flows in a resistance wire. Simultaneously, generation of noise depending on potential distribution and variation of stray capacitance around a resistor is suppressed. When the resistance wire having a constant thickness and uniform resistivity, which is formed on an insulating substrate, is connected to a pair electrode conductors that face to each other, in the way that the resistance wire is repetitively bent to the alternate side in zigzags, a potential gradient on the wiring plane, which is generated when electric current flows in the resistance wire, is constant by properly selecting the line width, the bending angle, and the spacing between bending vertexes of a resistance wire.

Abstract: The present invention provides a technique enabling to control fringe spacing s and an interference width W independently of each other, which are important parameters for an interferometer using an electron biprism. In the present invention, two electron biprisms 9u, 9b are used in two stages along the optical axis, and fringe spacing s and an interference width W are controlled independently of each other by controlling a voltage applied to an electrode of each of the electron biprisms. Also Fresnel diffraction can be suppressed.

Abstract: Charged particle beam equipment having a rotary mechanism in which shift of the observing/machining position incident to the rotary operation of the equipment having the rotary mechanism can be corrected conveniently with high precision in a plane perpendicular to the optical axis of the optical system of charged particle beam or in a slightly inclining plane. An X-Y shift incident to rotation in a plane is determined from the angular information of a rotary mechanism such as a sample holder, diaphragms or biprisms in the charged particle beam equipment, and then driving or controlling is performed to cancel the X-Y shift.