Abstract: A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.

Abstract: A film containing low dielectric constant MSQ is used for an interlayer insulation film, an opening is provided in the MSQ by use of a resist as a mask, and resist is ashed while the MSQ is exposed. Ashing conditions in this case are set to a low temperature (−20° C. to 60° C.) and lower pressure (5 to 200 mTorr), and RF supply is carried out in the order of bias power and source power. Thus, a CH3 group which determines a low dielectric constant characteristic of the MSQ can be left in the film.

Abstract: There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHz, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 &mgr;sec, and (a4) pulse-on time is equal to or greater than 50 &mgr;sec, and (b) patterning multi-layered metal wirings by etching through the plasma The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.

Abstract: A semiconductor device manufacturing method according to the invention includes a process for forming an insulating film made of organic material the dielectric constant of which is low and which has a relative dielectric constant lower than that of silicon oxide on a semiconductor substrate, a process for forming a resist film having an opening on the insulating film, a process for dry-etching the insulating film using the resist film as a mask and a process for removing at least a part of the resist film by ashing using the plasma of mixed gas including nitrogen and hydrogen.

Abstract: A high-dielectric-constant film etching method realizing a high etching rate and, moreover, etching of a highly anisotropic shape is provided. At the time of etching a high-dielectric-constant film, a mask made of an inorganic material is used, a mixed gas of a fluorine gas or fluorine compound gas and an inert gas is used as an etching gas, gaseous oxygen is added to the mixed gas, and the high-dielectric-constant film is etched with the resultant gas.

Abstract: A method for forming interconnects of a semiconductor device in which an amount of the fluorocarbon-based gas in an etching gas is adjusted to form a side-wall film which has a film thickness not less than a critical film thickness. In the present invention, the damage of a gate electrode and a gate dielectric film, due to charging imbalance caused by an electron shading effect during the etching of an interconnect layer, can be prevented.

Abstract: There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHz, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 &mgr;sec, and (a4) pulse-on time is equal to or greater than 50 &mgr;sec, and (b) patterning multi-layered metal wirings by etching through the plasma The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.

Abstract: A photo-resist having a predetermined pattern is formed on a top surface of a Pt layer. Next, the Pt layer is dry-etched by using a mixture of Cl2 and Ar as an etching gas. In this case, etching by-products are deposited on both side surfaces of the photo-resist and the Pt layer is shaped into an electrode. Then, the photo-resist which has become unnecessary after the Pt layer is dry etched is ashed and stripped by oxygen plasma. A Si substrate on which the etching by-products are deposited is soaked in a mixing solution composed of acetoacetylacetone, ammonia and DI water. The etching by-products are easily dissolved and removed.

Abstract: A method of manufacturing a semiconductor device containing a ruthenium oxide includes the step of dry-etching the ruthenium oxide using a gas mixture containing oxygen or ozone gas and at least one material selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, a halogen gas containing at least one of the fluorine, chlorine, bromine, and iodine gases, and a hydrogen halide.