Abstract: A hydraulic control device that includes a source pressure generating valve that generates a source pressure; a solenoid valve that can supply the engagement pressure based on the source pressure; and a supply pressure switching valve that can be switched between a first state where the supply pressure switching valve can supply the engagement pressure to the second engagement element and a second state where the supply pressure switching valve can supply the source pressure to the second engagement element, the supply pressure switching valve being in the first state when the solenoid valve is operating normally, and being switched to the second state in case of abnormality in the solenoid valve.

Abstract: A gate control system includes a gate opening-closing machine configured to control opening and closing of a gate, and a register machine. The register machine includes a code reader configured to read encoded information, a printer, and a control unit configured to process the encoded information read by the code reader and control the printer to print a receipt that lists merchandise containing a plurality of first encoded information read by the code reader and a code readable by a gate opening-closing machine based on second encoded information read by the code reader.

Abstract: In an active region, a MOS gate of an IGBT is provided on a front surface side of a semiconductor substrate. In an edge termination region, a Zener diode is provided on the front surface of the semiconductor substrate, via a field oxide film. The semiconductor substrate is one of semiconductor chips formed by cutting, into individual chips, a diffused wafer that includes a p+-type diffusion layer formed by diffusing boron in a surface layer of one main surface of an n?-type starting wafer. An outermost p+-type region of the IGBT faces the Zener diode across a field oxide film in the depth direction. The thickness of the p+-type diffusion layer is 100 ?m or more. The thickness of the n?-type drift region is 100 ?m or more. The thickness of the semiconductor substrate is 200 ?m or more.

Abstract: An internal combustion engine igniter of the present invention includes a current limiting circuit that limits current flowing to the IGBT by controlling a gate voltage of the IGBT in accordance with the current flowing to the IGBT, a waveform-shaping circuit that suppresses an oscillation of the current flowing to the IGBT by applying to the gate voltage of the IGBT an auxiliary voltage generated from a collector voltage of the IGBT when current is being limited by the current limiting circuit, and, in addition, a heat-generation suppressing circuit that obtains an intermediate voltage by resistively dividing the auxiliary voltage generated by the waveform-shaping circuit when current is being limited by the current limiting circuit, and that suppresses IGBT heat generation by increasing the current flowing to the IGBT in accordance with the intermediate voltage.

Abstract: A semiconductor device includes a first element portion including an IGBT and a second element portion including a circuit that controls the IGBT on the same semiconductor substrate. The novel structure reduces the size of the entire circuit and includes a drift region on a front surface of the substrate; a region in a surface layer of the drift region which is opposite to the substrate; an insulator layer that passes through the region in a depth direction and reaches the drift region, the insulator layer provided at a boundary between the first and second element portions, and separating the region into a first region in the first element portion and having the emitter potential of the IGBT and a second region in the second element portion; and a first contact electrode that contacts the second region, and that is electrically connected to an emitter electrode of the IGBT.

Abstract: An engine control device applied to a vehicle equipped with an actuator for changing a suspension property of the vehicle, a suspension control device for driving the actuator, and an engine. The engine control device automatically stops the engine operation when a stop condition is satisfied and automatically starts the engine operation when a start condition is satisfied, continues the engine operation when a signal for inhibiting the automatic stop of the engine operation is sent to the engine control device in order to drive the actuator and the engine control device judges that no malfunction occurs in the suspension control device even if the stop condition is satisfied, and ignores the signal and automatically stops the engine operation when the stop condition is satisfied and judges that the malfunction occurs in the suspension control device even if the signal is sent to the engine control device.

Abstract: An igniter semiconductor device and an igniter system can prevent the influence of a voltage drop of an ON signal voltage input to an input terminal and the influence of a surge voltage, allow a switching element to operate reliably, and prevent an ignition failure. The igniter semiconductor device includes an external terminal including at least an input terminal, an output terminal electrically connected to an ignition coil, a ground terminal, and a power supply terminal electrically connected to a regulated power supply wire outside the igniter semiconductor device. The ignited semiconductor device further includes a switching element for controlling current flowing in the ignition coil, and a driving circuit that receives power through the power supply terminal and drives the switching element based on a signal input from the input terminal.

Abstract: Provided is a switch apparatus including a conductor; a switching device that contacts the conductor on a first surface and switches between a first terminal on the first surface side and a second terminal on a second surface side that is opposite to the first surface; and a control device that contacts the conductor on a third surface and includes a control circuit of the switching device provided on a fourth surface side opposite to the third surface and a first withstand voltage structure that protects the control circuit from excessive voltage added to the conductor. By providing the withstand voltage structure in the control device, it is possible to protect the control circuit.

Abstract: An ignition control device for an internal combustion engine can include an ignition coil supplying a discharge voltage to an ignition device of an ignition combustion engine, a voltage-controlled type semiconductor element connected to a primary side of the ignition coil and an ignition control section capable of repeating, multiple time in an ignition period, operations of turning ON and turning OFF of the voltage-controlled type semiconductor element by giving a gate signal to a gate of the voltage-controlled type semiconductor element. The ignition control section can include an active element that discharges gate charges accumulated on the gate of the voltage-controlled type semiconductor element upon turning OFF operation of the voltage-controlled type semiconductor element to the ground, and that is connected between the gate and a resistor at a side of the gate inserted in a gate wiring connected to the gate of the voltage-controlled type semiconductor element.

Abstract: The present invention provides methods of treating a cell proliferative disorder, such as a cancer, by administering to a subject in need thereof a therapeutically effective amount of a pyrroloquinolinyl-pyrrole-2,5-dione compound or a pyrroloquinolinyl-pyrrolidine-2,5-dione compound in combination with a therapeutically effective amount of a second anti-proliferative agent.

Abstract: A vehicle control apparatus is provided that can maintain an automatic engine stop function when an abnormality occurs in a preceding vehicle following control function. The vehicle control apparatus includes a first control unit configured to include a preceding vehicle following control function to control vehicle speed, based on a traveling state of a preceding vehicle, and to output a prohibition request to an automatic engine stop function; and a second control unit configured to include the automatic engine stop function, and to maintain the automatic engine stop function, contrary to the prohibition request output from the first control unit, when an abnormality occurs in the preceding vehicle following control function.

Abstract: The engine control device is applied to a vehicle equipped with a suspension control device for driving stepping motors for changing damping forces of shock absorbers. The suspension control device performs an initializing process for resolving the step-out of the stepping motors by driving the stepping motors when an initialization performing condition is satisfied. The engine control device continues the engine operation when a signal for inhibiting the automatic stop of the operation of the engine is sent to the engine control device and the engine control device judges that no malfunction occurs in the suspension control device even if the engine stop condition is satisfied. The engine control device automatically stops the operation of the engine when the engine stop condition is satisfied and the engine control device judges that a malfunction occurs in the suspension control device even if the signal is sent to the engine control device.

Abstract: A secondary battery has a progressively degrading SOC that is an SOC at which the battery performance degrades during storage, and is charged and discharged by a controller. An information processor holds a first threshold value set in advance and lower than the progressively degrading SOC of the secondary battery, and a second threshold value set in advance and higher than the progressively degrading SOC, makes the controller continue an operation to charge the secondary battery from the first threshold value to the second threshold value at the time of charging the secondary battery based on the value of the SOC of the secondary battery detected by the controller, and makes the controller continue an operation to discharge the secondary battery from the second threshold value to the first threshold value at the time of discharging the secondary battery based on the value of the SOC of the secondary battery detected by the controller.

Abstract: An igniter semiconductor device and an igniter system can prevent the influence of a voltage drop of an ON signal voltage input to an input terminal and the influence of a surge voltage, allow a switching element to operate reliably, and prevent an ignition failure. The igniter semiconductor device includes an external terminal including at least an input terminal, an output terminal electrically connected to an ignition coil, a ground terminal, and a power supply terminal electrically connected to a regulated power supply wire outside the igniter semiconductor device. The ignited semiconductor device further includes a switching element for controlling current flowing in the ignition coil, and a driving circuit that receives power through the power supply terminal and drives the switching element based on a signal input from the input terminal.

Abstract: A secondary battery has a progressively deteriorating SOC in which battery performance deteriorates when the secondary battery is stored, and is charged and discharged by a control device. An information processing device stores a preset first threshold smaller than the progressively deteriorating SOC of the secondary battery and a preset second threshold greater than the progressively deteriorating SOC, and separates the range from the minimum SOC to the maximum SOC of the secondary battery into, at least, two regions by setting the section from the first threshold to the second threshold as a boundary to thereby cause the control device to charge or discharge the secondary battery within any of the above regions.

Abstract: Aspects of the invention are directed to a single chip igniter such that it is possible to realize a reduction in operating voltage, an increase in noise tolerance, a reduction in size, and a reduction in cost. By reducing the gate threshold voltage of a MOS transistor, and reducing the operating voltages of a current limiter circuit, an overheat detector circuit, a timer circuit, an overvoltage protection circuit, an input hysteresis circuit, and the like, it is possible to reduce the operating voltage of a single chip igniter. In some aspects of the invention, the effective gate voltage of the MOS transistor is 1V or more, and the channel length of the MOS transistor is 4 ?m or less. Also, in some aspects of the invention, the thickness of a gate oxide film of the MOS transistor is 5 nm or more, 25 nm or less.

Abstract: A shift register includes series-connection circuits to transmit a shift pulse. The series-connection circuits include a continuous stage group with continuous stages. Each stage of the continuous stage group includes a first output transistor, a first capacitor, an input gate, a first switching element, a second switching element, a third switching element, and a fourth switching element.

Abstract: An ignition control device for an internal combustion engine can include an ignition coil supplying a discharge voltage to an ignition device of an ignition combustion engine, a voltage-controlled type semiconductor element connected to a primary side of the ignition coil and an ignition control section capable of repeating, multiple time in an ignition period, operations of turning ON and turning OFF of the voltage-controlled type semiconductor element by giving a gate signal to a gate of the voltage-controlled type semiconductor element. The ignition control section can include an active element that discharges gate charges accumulated on the gate of the voltage-controlled type semiconductor element upon turning OFF operation of the voltage-controlled type semiconductor element to the ground, and that is connected between the gate and a resistor at a side of the gate inserted in a gate wiring connected to the gate of the voltage-controlled type semiconductor element.

Abstract: A semiconductor device includes a first element portion including an IGBT and a second element portion including a circuit that controls the IGBT on the same semiconductor substrate. The novel structure reduces the size of the entire circuit and includes a drift region on a front surface of the substrate; a region in a surface layer of the drift region which is opposite to the substrate; an insulator layer that passes through the region in a depth direction and reaches the drift region, the insulator layer provided at a boundary between the first and second element portions, and separating the region into a first region in the first element portion and having the emitter potential of the IGBT and a second region in the second element portion; and a first contact electrode that contacts the second region, and that is electrically connected to an emitter electrode of the IGBT.

Abstract: An engine control device applied to a vehicle equipped with an actuator for changing a suspension property of the vehicle, a suspension control device for driving the actuator, and an engine. The engine control device automatically stops the engine operation when a stop condition is satisfied and automatically starts the engine operation when a start condition is satisfied. The engine control device continues the engine operation when a signal for inhibiting the automatic stop of the engine operation is sent to the engine control device in order to drive the actuator and the engine control device judges that no malfunction occurs in the suspension control device even if the stop condition is satisfied. The engine control device ignores the signal and automatically stops the engine operation when the stop condition is satisfied and judges that the malfunction occurs in the suspension control device even if the signal is sent to the engine control device.