Abstract: A laminated electronic component includes a first plating film that defines a base for external terminal electrodes and that includes a plurality of layers including a first layer made of, for example, copper and a second layer provided on the first layer. The total thickness of the first plating film is about 3 ?m to about 15 ?m, and the thickness of the second layer is about 2 to 10 times as thick as the thickness of the first layer. The first layer is formed by electroless plating, and the second layer is formed by electrolytic plating. This formation results in a grain size of about 0.5 ?m or more of a metal grain included in the second layer, and thus makes the film less susceptible to oxidation.

Abstract: The semiconductor circuit device includes a power line receiving first voltage; each of internal circuits being provided with different operating voltages by the operation mode; a power supply circuit connected with one of internal circuits and the power line to provide second voltage lower than the first voltage to the one of internal circuits; and a control circuit controlling the power supply circuit in accordance with each of the operation modes, wherein when a change of a operation mode is performed, if a operating voltage after the change of a operation mode is higher than a operating voltage before the change of a operation mode, firstly the control circuit controls the power supply circuit to supply a second voltage higher than the operating voltage and secondly the control circuit controls the power supply circuit to supply the operation voltage after the change of a operation mode to the internal circuit.

Abstract: A first power-cutoff switch is disposed between a power line and an internal power line dedicated for a circuit block, and has a current supply capacity having the level at which ON-current can protect an external examination environment. A second power-cutoff switch is disposed between a power line and an internal power line, and has a current supply capacity having the level at which ON-current can supply consumed current of the circuit block. A detecting circuit detects that a voltage of the internal power line matches a reference voltage. The first power-cutoff switch is ON/OFF by an operation state of the circuit block. The second power-cutoff switch is ON by detecting the matching of the volumes with the detecting circuit and is OFF by the ON/OFF operation of the first power-cutoff switch.

Abstract: The invention relates to a compound of formula I wherein Ar1, Ar2, R1, R2, R3, R4, n, o, p, and q are as defined herein and to a pharmaceutically active salt thereof, including all stereoisomeric forms, individual diastereoisomers and enantiomers of the compound of formula (I) as well as racemic and non-racemic mixtures thereof. The compounds are high potential NK-3 receptor antagonists for the treatment of depression, pain, psychosis, Parkinson's disease, schizophrenia, anxiety and attention deficit hyperactivity disorder (ADHD).

Abstract: A semiconductor device whose operational state is switched between a test state and a normal operational state according to a logical value of a signal input from the outside is provided. The semiconductor device includes a first power line, a second power line, a switch that is controlled by a signal line to couple/isolate the first power line to/from the second power line, a control circuit that outputs a control signal, and a state switching circuit that drives the signal line to couple/isolate the first power line to/from the second power line according to a logical value of the control signal when the input signal is one of logical values, whereas the state switching circuit drives the signal line to couple the first power line to the second power line when the first signal is the other logical value.

Abstract: A signal transmission system includes: a transmitting section including a first carrier signal generating section configured to generate a carrier signal for modulation and a first frequency converting section configured to generate a transmission signal by frequency-converting a transmission object signal by the carrier signal for modulation, the carrier signal for modulation being generated by the first carrier signal generating section; and a receiving section including a second carrier signal generating section configured to generate a carrier signal for demodulation and a second frequency converting section configured to frequency-convert the transmission signal received by the carrier signal for demodulation, the carrier signal for demodulation being generated by the second carrier signal generating section.

Abstract: The device includes: a signal generating unit generating a millimeter wave signal by signal processing of an input signal; a coupling circuit transmitting an electromagnetic wave from the millimeter wave signal generated by the signal generating unit to one end of a circuit board; a coupling circuit receiving the electromagnetic wave from the millimeter wave signal from the other end of the circuit board; and a signal generating unit that generates an output signal by signal processing of the millimeter wave signal from the electromagnetic wave received by the coupling circuit. Preferably, the circuit board is constituted by a dielectric material whose the dielectric loss tangent is relatively large, and a transmission line functioning as a millimeter wave transmission path is constituted within this circuit board. With this construction, extremely high-speed signals can be transmitted through a circuit board having a prescribed dielectric constant representing a large loss.

Abstract: A method for manufacturing a laminated ceramic capacitor includes a step of preparing a laminate which has a first principal surface, a second principal surface, a first end surface, a second end surface, a first side surface, and a second side surface and which includes insulating layers and internal electrodes having end portions exposed at the first or second end surface; a step of forming external electrodes on the first and second end surfaces such that plating deposits are formed on the exposed end portions of the internal electrodes so as to be connected to each other; and a step of forming thick end electrodes electrically connected to the external electrodes such that a conductive paste is applied onto edge portions of the first and second principal surfaces and first and second side surfaces of the laminate and then baked.

Abstract: High definition (HD) video may be sent from, e.g., a laptop computer on a table in a room to a video projector mounted on the ceiling using a 60 GHz high capacity (2.5 Gbps) wireless link. At this frequency and data rate, the signal is so short range and directional that low power may be used and the video may be transmitted in an uncompressed form such that so much data is transmitted each second that bootlegging the content is essentially untenable. No wiring between the HD video source and the HD video display is necessary.

Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

Abstract: A method of manufacturing an antenna comprising: providing a millimeter wave (MMW) antenna attached to a signal pad on an integrated circuit mounted on a substrate, and adjusting one or more parameters of the antenna to conform to predetermined desired thresholds, levels or ranges, wherein the adjustment is selected from the group consisting of: locating a conducting or dielectric object at a desired tuner location in proximity to the antenna to tune the central signal frequency, locating a conducting reflector at a desired reflector location in proximity to the antenna to tune the radiation direction or pattern, and selecting a conducting patch or object as a radiator/detector element to modify the bandwidth. Also a millimeter wave (MMW) antenna.

Abstract: A laminated electronic component includes a component body including a plurality of laminated functional layers, a plurality of internal conductors provided inside the component body, and an external terminal electrode that is electrically connected to an internal conductor via an exposed portion of the internal conductor and that is defined by a direct plating film. An average grain diameter of metal grains defining the plating film is about 0.1 ?m or less.

Abstract: A method for manufacturing a laminated ceramic capacitor includes a step of preparing a laminate which has a first principal surface, a second principal surface, a first end surface, a second end surface, a first side surface, and a second side surface and which includes insulating layers and internal electrodes having end portions exposed at the first or second end surface; a step of forming external electrodes on the first and second end surfaces such that plating deposits are formed on the exposed end portions of the internal electrodes so as to be connected to each other; and a step of forming thick end electrodes electrically connected to the external electrodes such that a conductive paste is applied onto edge portions of the first and second principal surfaces and first and second side surfaces of the laminate and then baked.

Abstract: A semiconductor device includes an internal circuit; a plurality of power switches arranged in parallel configured to supply a current to the internal circuit; an instruction circuit configured to output a instruction signal for controlling power supply to the internal circuit; a variation detection circuit configured to detect the current and to output a detection result; and a logic circuit configured to control a timing when the plurality of power switches becomes a conducting state in accordance with the detection result and the instruction signal.

Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

Abstract: A semiconductor device interconnecting unit configured to input/output a high-frequency signal having a millimeter wave band to/from a semiconductor device is provided. The semiconductor or device interconnecting unit includes a part of a band pass filter configured to pass therethrough the high-frequency signal having a millimeter wave band by using an LC resonance circuit, and a remainder of the band pass filter, wherein the part and the remainder are separated from each other. The part is provided inside the semiconductor device, and the remainder is provided outside the semiconductor device. The part and the remainder include capacitors having variable capacitors added thereto, respectively. A pass band for the high-frequency signal having a millimeter wave band is changed by changing capacitance values of the variable capacitors.

Abstract: A semiconductor integrated circuit includes a core circuit, a power supply switch situated on a path providing a current to the core circuit and configured to control a state of current supply to the core circuit in response to a control signal applied to a control node, a clamp circuit configured to clamp a voltage of the control signal, and a switching circuit configured to control whether to enable or disable a clamp operation of the clamp circuit.

Abstract: A wireless transmission system includes: a communication unit for transmission; and a communication unit for reception. The communication units for transmission and reception are housed in a housing of the same electronic apparatus, or the communication unit for transmission is housed in a housing of first electronic apparatus and the communication unit for reception is housed in a housing of second electronic apparatus and a wireless signal transmission path enabling wireless information transmission between the communication units is formed between the communication units when the first and the second electronic apparatus are disposed at given positions to be integrated with each other. The communication unit for transmission includes a first carrier signal generating unit and a first frequency converter, and the communication unit for reception includes a second carrier signal generating unit, and a second frequency converter.

Abstract: A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. A compound represented by the formula (1-8): [wherein Y represents a group represented by the following formula: Q represents a protected carbonyl group; D represents —(CH2)m—R?, etc.; and n represents an integer of 0 to 10].

Abstract: There is provided a wired transmission line for AV devices which includes a first AV device and a second AV device, the wired transmission line allowing millimeter-wave communication between the first AV device and the second AV device using a millimeter-wave communication module provided for each of the first AV device and the second AV device, wherein the wired transmission line includes: a first coupling unit capable of being attached to a housing of the first AV device above the millimeter-wave communication module included in the first AV device; a second coupling unit capable of being attached to a housing of the second AV device above the millimeter-wave communication module included in the second AV device; and a waveguide which couples the first coupling unit and the second coupling unit.