Abstract: A non-aqueous electrolyte power storage device in which a coating material having a silanol group is present at least on a surface of an electrode active material layer and a sulfur-based material is contained in a cell, the electrode active material layer contains an electrode active material and a resin-based binder, the electrode active material is an active material capable of being alloyed with a metal element identical to an ion species responsible for electrical conduction or an active material capable of absorbing ions responsible for electrical conduction, and the coating material having a silanol group is a silicate containing a siloxane bond as a component or a silica fine particle aggregate (containing a siloxane bond as a component).

Abstract: Provided is a conductive undercoating agent, including: a conductive carbon material; a binding agent; and a solvent, wherein the conductive carbon material is flaked graphite having an average thickness of from 10 nm to 200 nm and a specific surface area of from 10 m2/g to 40 m2/g.

Abstract: To provide an electrode for non-aqueous electrolyte batteries, which traps hydrogen sulfide gas, generated from the inside thereof for some reason, in the electrode, and suppresses the outflow of hydrogen sulfide gas to the outside of the battery. An electrode for lithium ion batteries includes a coating material which contains a silanol group and is present on at least a surface of an active material layer. The active material layer contains a sulfur-based material and a resin-based binder. The sulfur-based material is an active material capable of alloying with lithium metal or an active material capable of occluding lithium ions. The coating material containing the silanol group is a silicate having a siloxane bond or a silica fine particle aggregate having a siloxane bond as a component.

Abstract: A crimp terminal-equipped flexible printed circuit board includes: a first flexible printed circuit board having a base film and a circuit provided on a surface of the base film and made of metal foil; multiple crimp terminals including crimp pieces crimped to penetrate the first flexible printed circuit board and bent to bite into part of the circuit; and an insulating reinforcing film partially integrally provided on an area of the base film where the multiple crimp pieces penetrate.

Abstract: A soy milk fermented substance is provided. The soy milk fermented substance has a taste and flavor or smooth physicality similar to that of yogurt obtained by fermenting milk with a lactic acid without applying processing treatment such as enzyme treatment or extraction treatment to soy milk which is a material and without adding a material such as a sugar source, even in a case where only Streptococcus thermophilus and Lactobacillus delbrueckii subsp. bulgaricus are employed as a lactic acid bacteria mixture starter at the time of making a fermented substance which employs soy milk as a material.

Abstract: Provided are a fermented soy beverage concentrate and a novel method for producing the fermented soy beverage concentrate. Provided is a method for producing a fermented soy beverage concentrate, the method including: a fermentation step of fermenting a soy beverage by adding a microorganism to the soy beverage; a volume increase step of mixing a fermented soy beverage obtained in the fermentation step and a soy beverage together to achieve an increased volume, thereby giving a mixture having a pH of lower than 6.0; and a concentration step of concentrating a solid content from the mixture obtained in the volume increase step.

Abstract: A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

Abstract: A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

Abstract: A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

Abstract: A semiconductor memory device according to an embodiment comprises: a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.

Abstract: A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a semiconductor layer provided extending in a first direction above the semiconductor substrate, on the semiconductor substrate; a first insulating layer provided on a side surface of the semiconductor layer; a charge accumulation layer provided on a side surface of the first insulating layer; a block insulating layer provided on a side surface of the charge accumulation layer; and a plurality of conductive layers stacked in the first direction via an insulating layer, in a periphery of the block insulating layer. The block insulating layer includes: a first block insulating layer; and a second block insulating layer that has a permittivity which is higher than that of the first block insulating layer. A lower end of the second block insulating layer is positioned more upwardly than a lower end of the first insulating layer.

Abstract: A semiconductor memory device according to an embodiment comprises: a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a semiconductor layer provided extending in a first direction above the semiconductor substrate, on the semiconductor substrate; a first insulating layer provided on a side surface of the semiconductor layer; a charge accumulation layer provided on a side surface of the first insulating layer; a block insulating layer provided on a side surface of the charge accumulation layer; and a plurality of conductive layers stacked in the first direction via an insulating layer, in a periphery of the block insulating layer. The block insulating layer includes: a first block insulating layer; and a second block insulating layer that has a permittivity which is higher than that of the first block insulating layer. A lower end of the second block insulating layer is positioned more upwardly than a lower end of the first insulating layer.

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body including a plurality of first electrode layers and a plurality of first insulating layers, the first electrode layers separately stacked each other, the first insulating layers provided between the first electrode layers; a second stacked body including a plurality of second electrode layers and a plurality of second insulating layers, the second electrode layers separately stacked each other, the second insulating layers provided between the second electrode layers, the second stacked body separated from the first stacked body in a first direction crossing a stacking direction of the first stacked body; and a first insulating portion provided between the first stacked body and the second stacked body, the first insulating portion provided integrally to the first insulating layers and the second insulating layers.

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body including a plurality of first electrode layers and a plurality of first insulating layers, the first electrode layers separately stacked each other, the first insulating layers provided between the first electrode layers; a second stacked body including a plurality of second electrode layers and a plurality of second insulating layers, the second electrode layers separately stacked each other, the second insulating layers provided between the second electrode layers, the second stacked body separated from the first stacked body in a first direction crossing a stacking direction of the first stacked body; and a first insulating portion provided between the first stacked body and the second stacked body, the first insulating portion provided integrally to the first insulating layers and the second insulating layers.

Abstract: According to one embodiment, a resistance change memory includes first and second semiconductor pillars on a conductive region, a first word line including a first portion surrounding a side surface of the first pillar, a second portion surrounding a side surface of the second pillar, and a third portion connecting between the first and second portions, the first and second portions being physically separated from one another, a first resistance change element connected to an upper portion of the first semiconductor pillar, and a second resistance change element connected to an upper portion of the second semiconductor pillar.

Abstract: A non-volatile memory device includes a first semiconductor body extending in a first direction, an electrode extending in a second direction intersecting the first direction, a charge storage layer provided between the first semiconductor body and the electrode, and a first insulating layer provided between the electrode and the charge storage layer. The electrode includes a first layer, a second layer and a third layer. The first layer is provided on the first insulating layer and includes tungsten. The second layer is provided on the first layer and includes tungsten nitride. The third layer is provided on the second layer and includes tungsten.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers; a first electrode layer included in the plurality of electrode layers; a second electrode layer included in the plurality of electrode layers; a first insulating layer provided between the first electrode layer and the second electrode layer, and provided in contact with the first electrode layer and the second electrode layer; a semiconductor portion; a charge storage film; a first conductive film; and second conductive film. The first conductive film is provided between the first electrode layer and the charge storage film, and provided in contact with the first insulating layer. The second conductive film is provided between the second electrode layer and the charge storage film, and provided in contact with the first insulating layer.

Abstract: [Problem to Be Solved] A present invention provides a soy milk fermented substance with a taste and flavor or smooth physicality similar to that of yogurt obtained by fermenting milk with a lactic acid without applying processing treatment such as enzyme treatment or extraction treatment to soy milk which is a material and without adding a material such as a sugar source, even in a case where only Streptococcus thermophilus and Lactobacillus delbrueckii subsp. bulgaricus are employed as a lactic acid bacteria mixture starter at the time of making a fermented substance which employs soy milk as a material. [Means for Solving the Problem] The problem is solved by a soy milk fermented substance obtained by using a lactic acid bacteria mixture starter including: Streptococcus thermophilus which is capable of accumulating 0.4 g/L or more of fructose in the fermented substance when inoculated and cultured in soy milk; and Lactobacillus debrueckii subsp. bulgaricus which is capable of accumulating 0.