Abstract: A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film.

Abstract: A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.

Abstract: A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed on the semiconductor substrate at predetermined intervals, a selecting transistor arranged on each of two sides of each of the plurality of word lines in which a spacing between the selecting transistor and an adjacent one of the word lines is not less than three times a width of each of the word lines, an interlayer insulating film formed to cover upper surfaces of the word lines and selecting transistors, a first cavity portion which is located between each pair of adjacent ones of the word lines and whose upper portion is covered with the interlayer insulating film, a second cavity portion which is formed at a side wall portion of the word line adjacent to each selecting transistor which faces the selecting transistor and whose upper portion is covered with the interlayer insulating film, and a third cavity portion which is formed at a side wall portion of each of the selecting transistors and whose upper portion

Abstract: A stacked gate nonvolatile semiconductor memory includes at least a memory cell transistor and a selective gate transistor which are formed on a semiconductor substrate. The memory cell transistor includes a floating gate made of a semiconductor material below an interlayer insulating layer and a control gate made of a silicide above the interlayer insulating layer. The selective gate transistor includes a semiconductor layer made of the semiconductor material, a silicide layer made of the silicide and a conductive layer made of a conductive material not subject to silicide process which is formed through the interlayer insulating film so as to electrically connect the semiconductor layer and the silicide layer.

Abstract: Portable wireless communication terminals such as cellular phones are equipped with features that are useful in controlling an operational mode in response to termination attempts according to a predetermined set of rules. When the rules are satisfied, the mode switch process in the remote cellular phone is able to change its operational mode without establishing a line connection. In addition, the remote cellular phone is also able to display a predetermined message such as contact information that is helpful in returning a lost cellular phone to an owner.

Abstract: A molecular weight of a polymer is measured by a process including steps of: heating a polymer portion with a heating device, measuring, with a temperature measuring device, the difference between temperatures of at least two points of the polymer portion at each of which the polymer portion is subjected to a thermally different influence from each other by the heating device, and estimating the molecular weight of the polymer which corresponds to the difference between the temperatures obtained by the measuring step according to a relationship between the temperature difference and the molecular weight of the polymer which relationship has been beforehand obtained.

Abstract: An X-ray tomography apparatus includes an X-ray tube, a collimator device and a film, which are revolved about an object body of medical examination in the same direction and at the same speed. The collimator device and the film are also rotated about their axes in the same direction and at the same speed.